Q62702-C2532

BC 856S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package 4 5 6 2 1 3 VPS05604 Type BC 856S Marking Ordering Code 3Ds Q62702-C2532 Pin Configuration 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 Package SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Symbol Value 65 80 80 5 100 200 250 150 - 65...+150 mW °C mA Unit V VCEO VCBO VCES VEBO IC I CM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤275 ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Ma 1998-11-01 -12-1998 BC 856S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics per Transistor Collector-emitter breakdown voltage Symbol min. Values typ. max. 15 5 nA µA 200 250 290 90 250 700 850 650 475 mV 300 650 750 820 V Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO I CBO I CBO hFE 65 80 80 5 - I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Collector-emitter breakdown voltage I C = 10 µA, VBE = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 °C DC current gain 1) I C = 10 µA, VCE = 5 V I C = 2 mA, V CE = 5 V Collector-emitter saturation voltage1) VCEsat I C = 10 mA, I B = 0.5 mA I C = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) VBEsat - I C = 10 mA, I B = 0.5 mA I C = 100 mA, IB = 5 mA Base-emitter voltage 1) VBE(ON) 600 - I C = 2 mA, V CE = 5 V I C = 10 mA, VCE = 5 V 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Ma 1998-11-01 -12-1998 BC 856S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter AC Characteristics per Transistor Transition frequency Symbol min. Values typ. 250 3 8 4.5 2 330 30 max. kΩ 10 -4 µS MHz pF Unit fT Ccb Ceb h11e h12e h21e h22e - I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz Semiconductor Group Semiconductor Group 33 Ma 1998-11-01 -12-1998 BC 856S Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 300 mW TS Ptot 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C Kei 150 n TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 44 Ma 1998-11-01 -12-1998 BC 856S Transition frequency f T = f (I C) Collector-base capacität CCB = f (VCBO) Emitter-base capacität CEB = f (VEBO) EHP00378 BC 856...860 EHP00376 VCE = 5V 10 3 MHz fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA 10 2 0 10 -1 5 10 0 V ΙC VCB0 10 1 (VEB0 ) Collector cutoff current I CBO = f (T A) Collector-emitter saturation voltage VCB = 30V 10 4 nA EHP00381 IC = f (VCEsat), h FE = 20 10 2 EHP00380 Ι CB0 10 3 5 10 5 10 1 5 10 5 10 -1 0 2 ΙC mA 100 C 25 C -50 C max 10 1 5 typ 10 5 0 0 50 100 C 150 10 -1 0 0.1 0.2 0.3 0.4 TA V 0.5 VCEsat Semiconductor Group Semiconductor Group 55 Ma 1998-11-01 -12-1998 BC 856S DC current gain h FE = f (I C) Base-emitter saturation voltage VCE = 5V 10 3 EHP00382 IC = f (VBEsat), hFE = 20 10 2 mA EHP00379 h FE 5 100 C 25 C ΙC 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 0 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 0 0.2 0.4 0.6 0.8 ΙC V 1.2 V BEsat Semiconductor Group Semiconductor Group 66 Ma 1998-11-01 -12-1998