Q62702-S653

BSP 92 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSP 92 Type BSP 92 Pin 2 D Pin 3 S Pin 4 D VDS -240 V ID -0.2 A RDS(on) 20 Ω Package SOT-223 Marking BSP 92 Ordering Code Q62702-S653 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -240 -240 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 20 ± A -0.2 TA = 35 °C DC drain current, pulsed IDpuls -0.8 TA = 25 °C Power dissipation Ptot 1.7 W TA = 25 °C Semiconductor Group 1 18/02/1997 BSP 92 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -240 -1.5 -0.1 -10 -10 12 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 -0.2 µA VDS = -240 V, VGS = 0 V, Tj = 25 °C VDS = -240 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -100 nA Ω 20 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -0.2 A Semiconductor Group 2 18/02/1997 BSP 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.06 0.13 95 20 10 - S pF 130 30 15 ns 8 12 VDS≥ 2 * ID * RDS(on)max, ID = -0.2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Rise time tr 25 40 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Turn-off delay time td(off) 25 33 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Fall time tf 42 55 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Semiconductor Group 3 18/02/1997 BSP 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A -0.9 -0.2 -0.8 V -1.2 Values typ. max. Unit ISM VSD TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = -0.4 A, Tj = 25 °C Semiconductor Group 4 18/02/1997 BSP 92 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V -0.22 A 2.0 W Ptot 1.6 1.4 1.2 ID -0.18 -0.16 -0.14 -0.12 1.0 -0.10 0.8 -0.08 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 -0.06 -0.04 -0.02 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 18/02/1997 BSP 92 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -0.45 A VGS [V] Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 65 Ptot = 2W lk j i h Ω 55 a -2.0 b -2.5 a b c d e f ID -0.35 g RDS (on) 50 45 40 35 30 25 20 g c -3.0 d -3.5 e -4.0 -0.30 -0.25 -0.20 e f -4.5 f g -5.0 h -6.0 i j -7.0 -8.0 -0.15 d k -9.0 l -10.0 -0.10 c 15 10 VGS [V] = a b c d e f -2.5 -2.0 -3.0 -3.5 -4.0 -4.5 -5.0 i k h j -0.05 0.00 0 -2 -4 -6 -8 -10 a b 5 0 -14 g h i j k -6.0 -7.0 -8.0 -9.0 -10.0 V 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A -0.36 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max -0.40 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.20 S A ID -0.30 gfs 0.16 0.14 -0.25 0.12 0.10 0.08 0.06 -0.20 -0.15 -0.10 0.04 -0.05 0.00 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.02 0.00 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 VGS A ID -0.40 Semiconductor Group 6 18/02/1997 BSP 92 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.2 A, VGS = -10 V 50 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 Ω RDS (on) 40 35 30 25 20 15 10 5 0 -60 -20 20 60 100 °C 160 VGS(th) -3.6 -3.2 -2.8 98% -2.4 98% -2.0 typ -1.6 -1.2 typ 2% -0.8 -0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs -10 0 pF C 10 2 A IF Ciss -10 -1 Coss 10 1 Crss -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 18/02/1997 BSP 92 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C -285 V -275 V(BR)DSS -270 -265 -260 -255 -250 -245 -240 -235 -230 -225 -220 -215 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 18/02/1997