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SDR1VSMS

SDR1VSMS

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR1VSMS - ULTRA FAST RECTIFIER - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SDR1VSMS 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1P thru SDR1W and SDR1PSMS and SDR1WSMS 1 AMP 1300 ─ 1900 VOLTS 70 nsec ULTRA FAST RECTIFIER FEATURES: Designer’s Data Sheet Part Number/Ordering Information 1/ SDR1 __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab Family P = 1300 V R = 1400 V S = 1500 V T = 1600 V V = 1700 V W = 1800 V          Ultra Fast Recovery: 70 ns Max @ 25°C 4/ Single Chip Construction PIV to 1800 Volts Low Reverse Leakage Current Hermetically Sealed For High Efficiency Applications Available in Axial and Surface Mount Versions Metallurgically Bonded TX, TXV, and S-Level Screening Available2/ MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage Rectified Forward Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25°C) SDR1P and SDR1PSMS SDR1R and SDR1RSMS SDR1S and SDR1SSMS SDR1T and SDR1TSMS SDR1V and SDR1VSMS SDR1W and SDR1WSMS SYMBOL VRRM VRWM VR VALUE 1300 1400 1500 1600 1700 1800 UNIT Volts IO IFSM TOP and TSTG RθJL RθJE Axial Lead 1.0 12 -65 to +175 40 28 SMS Amp Amps °C °C/W Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25°C) Operating & Storage Temperature Thermal Resistance, Junction to Lead, L = 3/8” (Axial) Junction to End Tab (SMS) NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp. 5/ For information on operating curves, contact factory. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0001J DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1P thru SDR1W and SDR1PSMS and SDR1WSMS ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 1 Adc, 300- 500 μs Pulse, TA = 25°C) Instantaneous Forward Voltage Drop (IF = 1 Adc, 300- 500 μs Pulse, TA = -55°C) Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 25°C) Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 100°C) Junction Capacitance (VR = 100Vdc, TA = 25°C , f = 1MHz) Maximum Reverse Recovery Time 4/ SYMBOL VALUE VF1 VF2 3.60 4.80 UNIT Vdc Vdc μA μA pf ns IR1 IR2 CJ trr DIMENSIONS 5 100 20 70 DIMENSIONS Square Tab Surface Mount Case Outline: DIM. A B C D MIN. .135” .175” .022” .002” MAX. .155” .250” .028” --- Axial Leaded Case Outline: DIM. A B C D MIN. MAX. .100” .150” .125” .200” .027” .033” 1.00” --- NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0001J DOC
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