VSMS3700-GS08

End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface-mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60° • Low forward voltage 948553 • Suitable for high pulse current operation • Good spectral photodetectors matching with Si • Package matched with IR emitter series VEMT3700 • Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION • Lead (Pb)-free reflow soldering VSMS3700 is an infrared, 950 nm emitting diode in GaAs technology, molded in a PLCC-2 package for surface mounting (SMD). • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Infrared source in tactile keyboards • IR diode in low space applications • PCB mounted infrared sensors • Emitter in miniature photo-interrupters PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (°) λP (nm) tr (ns) 4.5 ± 60 950 800 VSMS3700 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMS3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMS3700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note • MOQ: minimum order quantity Rev. 1.5, 15-Jul-2020 Document Number: 81373 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage IF 100 mA Peak forward current Forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1.5 A PV 170 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C According to Fig. 11, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction-to-ambient 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21341 20 30 40 50 60 70 80 90 0 100 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21342 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.3 1.7 V IF = 1 A, tp = 100 μs VF - 1.8 - V IF = 100 mA TKVF - -1.3 - mV/K μA VR = 5 V IR - - 100 VR = 0 V, f = 1 MHz, E = 0 Cj - 30 - pF IF = 100 mA, tp = 20 ms Ie 1.6 4.5 8 mW/sr IF = 1.5 A, tp = 100 μs Ie - 35 - mW/sr IF = 100 mA, tp = 20 ms φe - 15 - mW IF = 100 mA TKφe - -0.8 - %/K ϕ - ± 60 - ° λp - 950 - nm Angle of half intensity Peak wavelength IF = 100 mA Spectral bandwidth IF = 100 mA Δλ - 50 - nm Temperature coefficient of λp IF = 100 mA TKλp - 0.2 - nm/K IF = 20 mA tr - 800 - ns IF = 1 A tr - 400 - ns IF = 20 mA tf - 800 - ns Rise time Fall time Virtual source diameter Rev. 1.5, 15-Jul-2020 IF = 1 A tf - 400 - ns EN 60825-1 d - 0.5 - mm Document Number: 81373 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 10 000 IF - Forward Current (mA) tp/T = 0.005 Ie - Radiant Intensity (mW/sr) Tamb < 60 °C 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 0.1 1 100 103 104 1000 Φe - Radiant Power (mW) I F - Forward Current (mA) 102 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 3 10 2 10 1 10 0 0 1 2 3 100 10 1 0.1 100 4 V F - Forward Voltage (V) 94 7996 101 102 103 104 IF - Forward Current (mA) 94 8012 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA Ie rel; e rel VF rel - Relative Forward Voltage (V) 101 IF - Forward Current (mA) 94 7956 Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 -1 1 0.1 100 10 tp - Pulse Length (ms) 95 9985 10 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.5, 15-Jul-2020 0 -10 0 10 947993-1 50 100 140 T amb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81373 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 1000 950 λ - Wavelength (nm) 94 7994 Fig. 9 - Relative Radiant Power vs. Wavelength 0° 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7  - Angular Displacement Ie, rel - Relative Radiant Intensity 30° 80° 0.6 0.4 0.2 0 948013-4 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement Rev. 1.5, 15-Jul-2020 Document Number: 81373 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 0.9 1.75 ± 0.1 3.5 ± 0.2 0.8 technical drawings according to DIN specifications C A 2.2 2.8 ± 0.15 Pin identification Drawing-No.: 6.541-5067.01-4 Issue: 7; 12.03.14 Ø 2.4 3 + 0.15 Mounting Pad Layout Area covered with solderresist 4 2.6 (2.8) 1.2 1.6 (1.9) 4 Dimensions: reflow and vapor phase (wave soldering) Rev. 1.5, 15-Jul-2020 Document Number: 81373 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors SOLDER PROFILE TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. Axis Title 10000 300 Max. 260 °C 255 °C 240 °C 217 °C 2nd line Temperature (°C) 250 245 °C 1000 200 1st line 2nd line Max. 30 s 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 °C/s Adhesive tape 100 Blister tape Max. ramp up 3 °C/s 50 10 0 0 50 19841-1 100 150 200 250 300 Time (s) Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Component cavity Fig. 12 - Blister Tape DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 3.5 3.1 2.2 2.0 FLOOR LIFE 5.75 5.25 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 3.6 3.4 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 94 8670 4.0 3.6 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95 94 8668 Fig. 13 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 14 - Beginning and End of Reel Rev. 1.5, 15-Jul-2020 Document Number: 81373 6 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. 2.5 1.5 The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 10.0 9.0 120° 4.5 3.5 COVER TAPE REMOVAL FORCE 13.00 12.75 63.5 60.5 Identification Label: Vishay type group tape code production code quantity 14.4 max. 180 178 94 8665 Fig. 15 - Dimensions of Reel-GS08 10.4 8.4 120° 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 Identification Label: Vishay type group tape code production code quantity 321 329 14.4 max. 18857 Fig. 16 - Dimensions of Reel-GS18 Rev. 1.5, 15-Jul-2020 Document Number: 81373 7 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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