STB15N80K5

STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order code VDS RDS(on)max ID PTOT STB15N80K5 3 1 3 D2PAK 1 STF15N80K5 2 TO-220FP STP15N80K5 TAB 190 W 800 V 0.375 Ω 35 W 14 A 190 W STW15N80K5 • Industry’s lowest RDS(on) x area 3 1 2 2 3 1 TO-220 • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested TO-247 Figure 1. Internal schematic diagram D(2, TAB) • Zener-protected Applications • Switching applications Description G(1) S(3) AM01476v1 These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1. Device summary Order code Marking Package Packaging D2PAK Tape and reel STB15N80K5 STF15N80K5 TO-220FP 15N80K5 STP15N80K5 TO-220 STW15N80K5 TO-247 October 2014 This is information on a product in full production. DocID023468 Rev 3 Tube 1/23 www.st.com 23 Contents STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 STB15N80K5, D²PAK (TO-263) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 STP15N80K5, TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 STF15N80K5, TO-220FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 STW15N80K5, TO-247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID ID Parameter Unit D2PAK, TO-220, TO-247 Gate- source voltage TO-220FP ± 30 Drain current (continuous) at TC = 25 °C 14 V 14 (1) A (1) A Drain current (continuous) at TC = 100 °C 8.8 8.8 IDM (2) Drain current (pulsed) 56 56 (1) A PTOT Total dissipation at TC = 25 °C 190 35 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) Viso Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) dv/dt (3) Tj Tstg 4 A 150 mJ 2500 Peak diode recovery voltage slope Operating junction temperature Storage temperature V 4.5 V/ns -55 to 150 °C 1. Limited by package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 14 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb(1) Thermal resistance junction-pcb max TO-220 TO-247 D2PAK TO-220FP 62.5 0.66 3.6 50 62.5 Unit °C/W 30 1. When mounted on 1inch² FR-4 board, 2 oz Cu. DocID023468 Rev 3 3/23 Electrical characteristics 2 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 1 mA Min. Typ. Max. 800 Unit V VDS = 800 V 1 µA VDS = 800 V, Tc=125 °C 50 µA Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID= 7 A 0.3 0.375 Ω Min. Typ. Max. Unit - 1100 - pF - 85 - pF IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 1.5 - pF Equivalent capacitance time related - 113 - pF - 49 - pF Co(tr)(1) Co(er) (2) VDS =100 V, f=1 MHz, VGS=0 Equivalent capacitance energy related VGS = 0, VDS = 0 to 640 V RG Intrinsic gate resistance f = 1MHz, ID=0 - 4.5 - Ω Qg Total gate charge - 32 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge VDD = 640 V, ID = 14 A VGS =10 V (see Figure 20) - 22 - nC 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 400 V, ID = 7 A, RG=4.7 Ω, VGS=10 V (see Figure 19 and 24) Rise time td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 19 - ns - 17.6 - ns - 44 - ns - 10 - ns Min. Typ. Max. Unit Table 7. Source drain diode Symbol ISD ISDM VSD 1. (1) Parameter Test conditions Source-drain current - 14 A Source-drain current (pulsed) - 56 A 1.5 V Forward on voltage ISD= 14 A, VGS=0 - trr Reverse recovery time - 445 ns Qrr Reverse recovery charge - 8.2 μC IRRM Reverse recovery current ISD= 14 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 21) - 37 A - 580 ns - 10 μC - 35 A Min. Typ. Max Unit 30 - - V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 14 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 21) Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0 The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. DocID023468 Rev 3 5/23 Electrical characteristics 2.1 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and TO-220 Figure 3. Thermal impedance for D2PAK and TO-220 AM15432v1 ID (A) 1µs 10µs 100µs ) (o n DS Op Lim era ite tion d by in th m is ax ar R e a is 10 1 1ms Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP AM15433v1 ID (A) on ) 10µs 100µs m 1ms Li 1 O D S( pe ra ite tion d by in t m his ax a R rea is 1µs 10 10ms Tj=150°C Tc=25°C 0.1 Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 AM15434v1 ID (A) 1µs ) on S( Op Lim era ite tion d by in th m is ax ar RD ea is 10µs 10 1 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 6/23 1 10 100 VDS(V) DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Figure 8. Output characteristics Figure 9. Transfer characteristics AM15435v1 ID (A) Electrical characteristics VGS= 10 V 30 AM15436v1 ID (A) VDS= 20 V 30 VGS= 9 V 24 24 VGS= 8 V 18 12 18 12 VGS= 7 V 6 6 VGS= 6 V 0 4 0 12 8 16 0 VDS(V) Figure 10. Gate charge vs gate-source voltage AM15443v1 VDS VGS (V) 12 VDS (V) 600 VDD=640 V ID=14 A 4 8 6 VGS(V) 10 Figure 11. Static drain-source on-resistance RDS(on) (Ω) 0.5 10 500 8 400 6 300 4 200 0.2 2 100 0.1 AM15441v1 VGS=10V 0.4 0 0 5 10 20 15 25 0 0 0 30 Qg(nC) Figure 12. Capacitance variations 5 10 15 20 25 ID(A) Figure 13. Source-drain diode forward characteristics AM15442v1 C (pF) 0.3 AM15439v1 VSD (V) TJ=-50°C 1000 Ciss 0.9 TJ=25°C 0.8 100 Coss 0.7 10 Crss 1 0.1 1 10 100 VDS(V) TJ=150°C 0.6 DocID023468 Rev 3 4 6 8 10 12 ISD(A) 7/23 Electrical characteristics STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Figure 14. Normalized gate threshold voltage vs temperature AM15440v1 VGS(th) (norm) VDS = VGS ID = 100 µA 1.1 Figure 15. Normalized on-resistance vs temperature AM15437v1 RDS(on) (norm) VGS = 10 V ID = 7 A 2.4 1 2 0.9 1.6 0.8 1.2 0.7 0.8 0.6 0.5 -75 -25 0.4 -75 125 TJ(°C) 75 25 Figure 16. Output capacitance stored energy AM15444v1 Eoss (µJ) -25 25 75 125 TJ(°C) Figure 17. Normalized VDS vs temperature AM15438v1 VDS (norm) 1.1 ID = 1mA 12 1.06 1.02 8 0.98 4 0.94 0 0 400 200 600 VDS(V) 0.9 -75 Figure 18. Maximum avalanche energy vs temperature $0Y ($6 P- ,' $ 9'' 9     8/23       7-ƒ& DocID023468 Rev 3 -25 25 75 125 TJ(°C) STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 21. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 22. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID023468 Rev 3 10% AM01473v1 9/23 Package mechanical data 4 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 4.1 Package mechanical data STB15N80K5, D²PAK (TO-263) Figure 25. D²PAK (TO-263) drawing 0079457_U DocID023468 Rev 3 11/23 Package mechanical data STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/23 Max. 0.4 0° 8° DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Package mechanical data Figure 26. D²PAK footprint(a) Footprint a. All dimension are in millimeters DocID023468 Rev 3 13/23 Package mechanical data 4.2 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 STP15N80K5, TO-220 Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S 14/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Package mechanical data Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID023468 Rev 3 15/23 Package mechanical data 4.3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 STF15N80K5, TO-220FP Figure 28. TO-220FP drawing 7012510_Rev_K_B 16/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Package mechanical data Table 11. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID023468 Rev 3 17/23 Package mechanical data 4.4 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 STW15N80K5, TO-247 Figure 29. TO-247 drawing 0075325_H 18/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Package mechanical data Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID023468 Rev 3 5.70 19/23 Packaging information 5 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Packaging information Figure 30. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 20/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Packaging information Figure 31. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID023468 Rev 3 Min. Max. 330 13.2 26.4 30.4 21/23 Revision history 6 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Revision history Table 14. Document revision history Date Revision 18-Jul-2012 1 First release. 2 – – – – 31-Oct-2012 Changes Inserted: IAR, EAS and dv/dt values in Table 2 Inserted: Table 5, 6 and 7 typical values Inserted: Section 2.1: Electrical characteristics (curves) Minor text changes Updated title, description and features 31-Oct-2014 3 Updated Static drain-source on-resistance Minor text changes 22/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID023468 Rev 3 23/23