STB25N80K5

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order code 3 3 1 1 D2PAK 2 VDS @ TJmax RDS(on) max ID PTOT STB25N80K5 TO-220FP STF25N80K5 TAB STP25N80K5 250 W 800 V 40 W < 0.260 Ω 19.5 A 250 W STW25N80K5 3 1 2 2 3 1 TO-220 • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM • Ultra low gate charge TO-247 Figure 1. Internal schematic diagram '7$% • 100% avalanche tested • Zener-protected Applications • Switching applications * Description 6 AM01476v1 These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1. Device summary Order code Marking Package Packaging D2PAK Tape and reel STB25N80K5 STF25N80K5 TO-220FP 25N80K5 STP25N80K5 TO-220 STW25N80K5 TO-247 October 2014 This is information on a product in full production. DocID023466 Rev 3 Tube 1/23 www.st.com 23 Contents STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 STB25N80K5, D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 STF25N80K5, TO-220FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 STP25N80K5, TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 STW25N80K5, TO-247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID ID Parameter Unit D2PAK, TO-220, TO-247 Gate- source voltage TO-220FP ± 30 Drain current (continuous) at TC = 25 °C 19.5 Drain current (continuous) at TC = 100 °C 12.3 V 19.5 (1) A 12.3 (1) A IDM (2) Drain current (pulsed) 78 78 (1) A PTOT Total dissipation at TC = 25 °C 250 40 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) 6.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 200 mJ Viso Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) dv/dt (3) Tj Tstg 2500 Peak diode recovery voltage slope Operating junction temperature Storage temperature V 6 V/ns -55 to 150 °C 1. Limited by package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 19.5 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb(1) Thermal resistance junction-pcb max TO-220 TO-247 D2PAK TO-220FP 62.5 0.5 3.1 50 62.5 Unit °C/W 30 1. When mounted on 1inch² FR-4 board, 2 oz Cu. DocID023466 Rev 3 3/23 Electrical characteristics 2 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 1 mA Min. Typ. Max. 800 Unit V VDS = 800 V 1 µA VDS = 800 V, Tc=125 °C 50 µA Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID= 10 A 0.19 0.260 Ω Min. Typ. Max. Unit - 1600 - pF - 130 - pF IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 2 - pF Equivalent capacitance time related - 185 - pF - 300 - pF Co(tr)(1) Co(er) (2) VDS =100 V, f=1 MHz, VGS=0 Equivalent capacitance energy related VGS = 0, VDS = 0 to 640 V RG Intrinsic gate resistance f = 1 MHz open drain - 4 - Ω Qg Total gate charge - 40 - nC Qgs Gate-source charge - 10 nC Qgd Gate-drain charge VDD = 640 V, ID = 19.5 A VGS =10 V (see Figure 19) - 25 nC 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/23 DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 400 V, ID = 10 A, RG=4.7 Ω, VGS=10 V (see Figure 21) Rise time td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 25 - ns - 13 - ns - 60 - ns - 15 - ns Min. Typ. Max. Unit Table 7. Source drain diode Symbol ISD ISDM VSD 1. (1) Parameter Test conditions Source-drain current - 19.5 A Source-drain current (pulsed) - 78 A 1.5 V Forward on voltage ISD= 19.5 A, VGS=0 - trr Reverse recovery time - 515 ns Qrr Reverse recovery charge - 11 μC IRRM Reverse recovery current ISD= 19.5 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 20) - 43.2 A - 615 ns - 13 μC - 43 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 19.5 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 20) Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Test conditions Gate-source breakdown voltage IGS= ± 1 mA, ID=0 Min. Typ. 30 - Max. Unit - V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. DocID023466 Rev 3 5/23 Electrical characteristics 2.1 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D2PAK and TO-220 AM15722v1 ID (A) (o n) 10 μs 100 μs DS Op Lim erat ite ion d b in y m this ax are R a 10 is 1μs 1 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP AM15723v1 1 ) on S( 10 μs D 10 O Li per m at ite io d ni by n m this ax a R rea is ID (A) 100 μs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-220 AM15724v1 ID (A) Figure 7. Normalized BVDSS vs temperature AM15733v1 BVDSS (norm) ID=1 mA n) (o 1.05 DS 10 Op Lim era ite tion d by in th m is ax ar R e a is 1.1 10 μs 100 μs 1 1ms 0.95 10ms 1 0.9 Tj=150°C Tc=25°C Single pulse 0.1 0.1 6/23 1 10 100 0.85 VDS(V) 0.8 -100 -50 DocID023466 Rev 3 0 50 100 150 TJ(°C) STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Figure 8. Safe operating area for TO-247 Electrical characteristics Figure 9. Thermal impedance for TO-247 AM15725v1 n) (o DS Op Lim era ite tion d by in th m is ax ar R e a is ID (A) 10 10 μs 100 μs 1ms 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 10. Output characteristics Figure 11. Transfer characteristics AM15726v1 ID (A) 45 AM15727v1 ID (A) 11V 10V 45 VDS=20V 40 40 9V 35 35 30 30 25 25 8V 20 20 15 15 7V 10 10 5 5 6V 0 5 0 10 15 20 Figure 12. Static drain-source on-resistance AM15734v1 RDS(on) (Ω) 0 4 VDS(V) VGS=10V 0.25 6 7 8 9 10 VGS(V) Figure 13. Gate charge vs gate-source voltage AM15728v1 VDS VGS (V) 12 0.3 5 (V) 600 VDS 10 500 8 400 6 300 4 200 2 100 0.2 0.15 0.1 0.05 0 4 8 12 16 20 24 28 32 36 40 ID(A) DocID023466 Rev 3 0 0 10 20 30 40 0 Qg(nC) 7/23 Electrical characteristics STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Figure 14. Capacitance variations Figure 15. Output capacitance stored energy AM15729v1 C (pF) AM15730v1 Eoss(μJ) 22 20 10000 18 Ciss 1000 16 14 12 100 Coss 10 8 6 10 Crss 4 2 0 0 1 0.1 1 10 100 VDS(V) Figure 16. Normalized on-resistance vs temperature 100 200 300 400 500 600 700 800 VDS(V) Figure 17. Source-drain diode forward characteristics AM15731v1 RDS(on) (norm) 2.5 AM15732v1 VSD (V) VGS=10V ID=10A 1 TJ=50°C 2 0.9 1.5 0.8 1 0.7 0.5 0.6 0 -100 8/23 -50 0 50 100 150 TJ(°C) 0.5 0 DocID023466 Rev 3 TJ=25°C TJ=150°C 5 10 15 20 ISD(A) STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID023466 Rev 3 10% AM01473v1 9/23 Package mechanical data 4 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/23 DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 4.1 Package mechanical data STB25N80K5, D2PAK Figure 24. D²PAK (TO-263) drawing 0079457_U DocID023466 Rev 3 11/23 Package mechanical data STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/23 Max. 0.4 0° 8° DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters DocID023466 Rev 3 13/23 Package mechanical data 4.2 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 STF25N80K5, TO-220FP Figure 26. TO-220FP drawing 7012510_Rev_K_B 14/23 DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID023466 Rev 3 15/23 Package mechanical data 4.3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 STP25N80K5, TO-220 Figure 27. TO-220 type A drawing BW\SH$B5HYB7 16/23 DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID023466 Rev 3 17/23 Package mechanical data 4.4 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 STW25N80K5, TO-247 Figure 28. TO-247 drawing 0075325_H 18/23 DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID023466 Rev 3 5.70 19/23 Packaging information 5 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Packaging information Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 20/23 DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Packaging information Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID023466 Rev 3 Min. Max. 330 13.2 26.4 30.4 21/23 Revision history 6 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Revision history Table 14. Document revision history Date Revision 17-Jul-2012 1 First release. 2 – Modified: IAR, EAS, dv/dt on Table 2, RDS(on) value on Table 4, entire values on Table 5, 6 and 7 – Updated: Section 4: Package mechanical data – Minor text changes – Updated: Table 11 and Figure 27 – Document status promoted from preliminary data to production data 3 Updated title, description and features in cover page. Updated Figure 12: Static drain-source on-resistance. Updated Section 4.1: STB25N80K5, D2PAK and Section 4.4: STW25N80K5, TO-247 Minor text change 04-Jun-2013 31-Oct-2014 22/23 Changes DocID023466 Rev 3 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID023466 Rev 3 23/23