IRF840A

IRF840A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Low gate charge Qg results in simple drive requirement Available • Improved gate, avalanche, and dynamic dV/dt ruggedness Available • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220AB G G D S S N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω) VGS = 10 V Qg max. (nC) 38 Qgs (nC) 9.0 Qgd (nC) APPLICATIONS 0.85 • Switch mode power supply (SMPS) • Uninterruptable power supply • High speed power switching 18 Configuration TYPICAL SMPS TOPOLOGIES Single • Two transistor forward • Half bridge • Full bridge ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF840APbF Lead (Pb)-free and halogen-free IRF840APbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 500 Gate-source voltage VGS ± 30 VGS at 10 V Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current a ID UNIT V 8.0 5.1 A IDM 32 1.0 W/°C Single pulse avalanche energy b EAS 510 mJ Repetitive avalanche current a IAR 8.0 A EAR 13 mJ PD 125 W dV/dt 5.0 V/ns TJ, Tstg -55 to +150 Linear derating factor Repetitive avalanche energy a Maximum power dissipation TC = 25 °C Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12) c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0852-Rev. C, 16-Aug-2021 Document Number: 91065 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.58 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 30 V - - ± 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance Forward transconductance RDS(on) VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 - - 0.85 Ω 3.7 - - S - 1018 - - 155 - 8.0 - ID = 4.8 A b VGS = 10 V b gfs VDS = 50 V, ID = 4.8 A Input capacitance Ciss Output capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 μA Dynamic Reverse transfer capacitance Crss Output capacitance Coss VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz Coss VGS = 0 V; VDS = 400 V, f = 1.0 MHz 42 Coss eff. VGS = 0 V; VDS = 0 V to 400 V c 56 Output capacitance Effective output capacitance Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Rise time Turn-off delay time - 1490 - - 38 - - 9.0 Qgd - - 18 td(on) - 11 - tr VDD = 250 V, ID = 8 A Rg = 9.1 Ω, RD = 31 Ω, see fig. 10 b - 23 - - 26 - - 19 - f = 1 MHz, open drain 0.7 - 3.7 - - 8.0 - - 32 td(off) Fall time tf Gate input resistance Rg VGS = 10 V ID = 8 A, VDS = 400 V, see fig. 6 and 13 b pF nC ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 8 A, VGS = 0 V b TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b - - 2.0 V - 422 633 ns - 2.16 3.24 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S21-0852-Rev. C, 16-Aug-2021 Document Number: 91065 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A www.vishay.com Vishay Siliconix 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain-to-Source Current (A) Top 10 1 4.5 V 20 µs Pulse Width TC = 25 °C 0.1 0.1 102 10 1 VDS, Drain-to-Source Voltage (V) 91065_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 105 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 104 Capacitance (pF) ID, Drain-to-Source Current (A) 10 ID = 8.0 A VGS = 10 V 91065_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C 102 3.0 4.5 V 1 Ciss 103 Coss 102 10 20 µs Pulse Width TC = 150 °C 0.1 0.1 VDS, Drain-to-Source Voltage (V) 91065_02 1 102 10 1 1 20 1 20 µs Pulse Width VDS = 50 V 0.1 4.0 91065_03 5.0 6.0 7.0 8.0 Fig. 3 - Typical Transfer Characteristics ID = 8.0 A VDS = 400 V 16 VDS = 250 V VDS = 100 V 12 8 4 For test circuit see figure 13 0 0 9.0 VGS, Gate-to-Source Voltage (V) S21-0852-Rev. C, 16-Aug-2021 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) TJ = 25 °C 103 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 102 TJ = 150 °C 102 10 VDS, Drain-to-Source Voltage (V) 91065_05 Fig. 2 - Typical Output Characteristics, TC = 150 °C 10 Crss 91065_06 10 20 30 40 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91065 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A www.vishay.com Vishay Siliconix 8.0 ID, Drain Current (A) ISD, Reverse Drain Current (A) 102 10 TJ = 150 °C TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.5 0.8 50 100 125 150 Fig. 9 - Maximum Drain Current vs. Case Temperature RD VDS Operation in this area limited by RDS(on) VGS 10 µs ID, Drain Current (A) 75 TC, Case Temperature (°C) 91065_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 102 2.0 25 VSD, Source-to-Drain Voltage (V) 91065_07 4.0 0.0 1.4 1.1 6.0 D.U.T. RG + - VDD 10 100 µs 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 ms 1 Fig. 10a - Switching Time Test Circuit 10 ms TC = 25 °C TJ = 150 °C Single Pulse 0.1 VDS 90 % 102 10 103 104 VDS, Drain-to-Source Voltage (V) 91065_08 Fig. 8 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 PDM 0.2 0.1 0.1 0.05 t1 t2 0.02 0.01 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-2 10-5 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) 91065_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S21-0852-Rev. C, 16-Aug-2021 Document Number: 91065 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A www.vishay.com Vishay Siliconix L 600 D.U.T RG + - IAS V DD 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit VDSav, Avalanche Voltage (V) Vary tp to obtain required IAS VDS 580 560 540 520 VDS 0.0 tp VDD 1.0 2.0 5.0 6.0 7.0 8.0 IAV, Avalanche Current (A) 91065_12d Fig. 13a - Typical Drain-to-Source Voltage vs. Avalanche Current VDS Current regulator Same type as D.U.T. IAS Fig. 12b - Unclamped Inductive Waveforms 50 kΩ 12 V EAS, Single Pulse Avalanche Energy (mJ) 4.0 3.0 0.2 µF 0.3 µF 1200 ID 3.6 A 5.1 A Bottom 8.0 A + D.U.T. Top 1000 800 - VDS VGS 3 mA 600 IG ID Current sampling resistors 400 Fig. 13b - Gate Charge Test Circuit 200 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) 91065_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current QG 10 V QGS QGD VG Charge Fig. 12d - Basic Gate Charge Waveform S21-0852-Rev. C, 16-Aug-2021 Document Number: 91065 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91065. S21-0852-Rev. C, 16-Aug-2021 Document Number: 91065 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000