IRF840

IRF840, SiHF840 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt rating 500 RDS(on) () VGS = 10 V Qg max. (nC) 63 • Fast switching Qgs (nC) 9.3 • Ease of paralleling Qgd (nC) 32 • Simple drive requirements Configuration Available • Repetitive avalanche rated 0.85 Single Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. TO-220AB G DESCRIPTION G D S Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF840PbF Lead (Pb)-free SiHF840-E3 IRF840 SnPb SiHF840 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 V VGS at 10 V Continuous Drain Current Pulsed Drain TC = 25 °C TC = 100 °C Current a ID IDM Linear Derating Factor 8.0 5.1 A 32 1.0 W/°C mJ Single Pulse Avalanche Energy b EAS 510 Repetitive Avalanche Current a IAR 8.0 A Repetitive Avalanche Energy a EAR 13 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) Mounting Torque d for 10 s 6-32 or M3 screw PD 125 W dV/dt 3.5 V/ns TJ, Tstg -55 to +150 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD  8.0 A, dI/dt  100 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. S16-0754-Rev. D, 02-May-16 Document Number: 91070 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.78 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 μA - - 0.85  gfs VDS = 50 V, ID = 4.8 A b 4.9 - - S Input Capacitance Ciss 1300 - Coss - 310 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - Output Capacitance - 120 - - - 63 - - 9.3 Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 4.8 A b VGS = 10 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 32 Turn-On Delay Time td(on) - 14 - tr - 23 - - 49 - - 20 - - 4.5 - - 7.5 - 0.6 - 2.8 - - 8.0 - - 32 Rise Time Turn-Off Delay Time td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS Gate Input Resistance Rg VGS = 10 V ID = 8 A, VDS = 400 V, see fig. 6 and 13 b VDD = 250 V, ID = 8 A Rg = 9.1 , RD = 31, see fig. 10 b Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S f = 1 MHz, open drain  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the  integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 8 A, VGS = 0 V b TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b - - 2.0 V - 460 970 ns - 4.2 8.9 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S16-0754-Rev. D, 02-May-16 Document Number: 91070 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID, Drain Current (A) 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 4.5 V 100 20 µs Pulse Width TC = 25 °C 100 101 VDS, Drain-to-Source Voltage (V) 91070_01 3.0 RDS(on), Drain-to-Source On Resistance (Normalized) VGS Top 2.5 ID = 8.0 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 TJ, Junction Temperature (°C) 91070_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 2500 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Top 2000 4.5 V Capacitance (pF) ID, Drain Current (A) 101 Ciss 1500 1000 Coss 500 100 Crss 20 µs Pulse Width TC = 150 °C 100 0 100 101 VDS, Drain-to-Source Voltage (V) 91070_02 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 101 25 °C 100 20 µs Pulse Width VDS = 50 V 4 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S16-0754-Rev. D, 02-May-16 VGS, Gate-to-Source Voltage (V) ID, Drain Current (A) 20 150 °C 101 VDS, Drain-to-Source Voltage (V) 91070_05 Fig. 2 - Typical Output Characteristics, TC = 150 °C 91070_03 20 40 60 80 100 120 140 160 ID = 8.0 A VDS = 400 V 16 VDS = 250 V VDS = 100 V 12 8 4 For test circuit see figure 13 0 10 0 91070_06 15 30 45 60 75 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Document Number: 91070 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 www.vishay.com Vishay Siliconix 150 °C ID, Drain Current (A) ISD, Reverse Drain Current (A) 8.0 101 25 °C 4.0 2.0 VGS = 0 V 100 0.0 0.4 0.6 0.8 1.0 1.4 1.2 25 VSD, Source-to-Drain Voltage (V) 91070_07 50 75 100 125 150 TC, Case Temperature (°C) 91070_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature RD 102 VDS Operation in this area limited by RDS(on) 5 ID, Drain Current (A) 6.0 VGS 10 µs 2 D.U.T. RG + - VDD 10 100 µs 5 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 ms 2 1 10 ms Fig. 10a - Switching Time Test Circuit 5 TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 0.1 2 5 1 2 5 10 2 5 102 VDS 2 5 103 2 5 90 % 104 VDS, Drain-to-Source Voltage (V) 91070_08 Fig. 8 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-3 10-5 10-4 10-3 10-2 0.1 1 10 102 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. D, 02-May-16 Document Number: 91070 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - IAS V DD VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID 3.6 A 5.1 A Bottom 8.0 A Top 1000 800 600 400 200 0 VDD = 50 V 25 91070_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS + QGD VG D.U.T. - VDS VGS 3 mA Charge Fig. 13a - Basic Gate Charge Waveform S16-0754-Rev. D, 02-May-16 IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91070 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + V - DD dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test Driver gate drive Period P.W. + D= P.W. Period V GS = 10 V a D.U.T. ISD waveform Reverse recovery current D.U.T. VDS Body diode forward current dI/dt waveform Diode recovery dV/dt Re-applied voltage V DD Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel          Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91070. S16-0754-Rev. D, 02-May-16 Document Number: 91070 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000