SI4501ADY-T1-E3

Si4501ADY Vishay Siliconix Complementary (N- and P-Channel) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.018 at VGS = 10 V 8.8 0.027 at VGS = 4.5 V 7.0 0.042 at VGS = - 4.5 V - 5.7 0.060 at VGS = - 2.5 V - 4.8 APPLICATIONS • Level Shift • Load Switch S2 SO-8 G2 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D D G1 Top View Ordering Information: Si4501ADY-T1-E3 (Lead (Pb)-free) Si4501ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol 10 s P-Channel Steady State 10 s Steady State Drain-Source Voltage VDS 30 -8 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C 8.8 7 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b ID TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD 6.3 - 5.7 5.2 - 4.5 30 V - 4.1 - 3.3 - 30 1.8 1.0 - 1.8 2.5 1.3 2.5 1.3 1.6 0.84 1.6 0.84 TJ, Tstg Unit A - 1.0 - 55 to 150 W °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF P-Channel Typ. Max. Typ. Max. 40 50 42 50 75 95 76 95 18 23 21 26 Unit °C/W Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. Document Number: 71922 S09-0868-Rev. D, 18-May-09 www.vishay.com 1 Si4501ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS VDS = VGS, ID = 250 µA N-Ch 0.8 1.8 VDS = VGS, ID = - 250 µA P-Ch - 0.45 - 1.0 VDS = 0 V, VGS = ± 20 V N-Ch ± 100 VDS = 0 V, VGS = ± 8 V P-Ch ± 100 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = - 8 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 8 V, VGS = 0 V, TJ = 55 °C P-Ch VDS = 5 V, VGS = 10 V N-Ch 30 VDS = - 5 V, VGS = - 4.5 V P-Ch - 20 ID(on) RDS(on) gfs VSD V nA µA -5 A VGS = 10 V, ID = 8.8 A N-Ch 0.015 0.018 VGS = - 4.5 V, ID = - 5.7 A P-Ch 0.030 0.042 VGS = 4.5 V, ID = 7.0 A N-Ch 0.022 0.027 VGS = - 2.5 V, ID = - 4.8 A P-Ch 0.048 0.060 VDS = 15 V, ID = 8.8 A N-Ch 18 VDS = - 15 V, ID = - 5.7 A P-Ch 12 IS = 1.8 A, VGS = 0 V N-Ch 0.73 1.1 IS = - 1.8 A, VGS = 0 V P-Ch - 0.75 - 1.1 Ω S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr N-Channel VDS = 15 V, VGS = 5 V, ID = 8.8 A P-Channel VDS = - 4 V, VGS = - 5 V, ID = - 5.7 A N-Channel VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω Fall Time tf P-Channel VDD = - 4 V, RL = 4 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω Source-Drain Reverse Recovery Time trr IF = 1.8 A, dI/dt = 100 A/µs Turn-Off Delay Time td(off) N-Ch 11.5 20 P-Ch 13.5 20 N-Ch 3 P-Ch 2.2 N-Ch 4 P-Ch 3 nC N-Ch 15 22 P-Ch 21 40 N-Ch 8 15 P-Ch 45 70 N-Ch 35 50 P-Ch 60 100 N-Ch 10 20 P-Ch 55 85 N-Ch 30 60 P-Ch 50 100 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71922 S09-0868-Rev. D, 18-May-09 Si4501ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 V thru 5 V 4V TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 24 16 3V 125 °C 24 16 8 8 0 0 0 2 4 6 8 0 10 1 2 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage Output Characteristics Transfer Characteristics 0.05 2000 0.04 1600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 25 °C 32 32 0.03 VGS = 4.5 V 0.02 VGS = 10 V 4 5 24 30 Ciss 1200 800 Coss 400 0.01 Crss 0 0.00 0 6 12 18 24 0 30 12 18 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 6 VDS = 15 V ID = 8.8 A 5 4 3 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 VGS = 10 V ID = 8.8 A 1.2 1.0 0.8 1 0 0 3 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71922 S09-0868-Rev. D, 18-May-09 www.vishay.com 3 Si4501ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 0.08 0.06 ID = 8.8 A 0.04 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 100 0.2 80 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 4 - 0.2 60 40 - 0.4 20 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.001 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 1 ms 10 10 ms 1 TA = 25 °C Single Pulse 0.1 0.01 0.1 * VGS 100 ms 1s 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 71922 S09-0868-Rev. D, 18-May-09 Si4501ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 75 °C/W t1 t2 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 71922 S09-0868-Rev. D, 18-May-09 www.vishay.com 5 Si4501ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 30 VGS = 5 V thru 3.5 V TC = - 55 °C 24 3V I D - Drain Current (A) I D - Drain Current (A) 32 24 2.5 V 16 2V 8 25 °C 125 °C 18 12 6 1.5 V 0 0 2 4 6 8 10 0 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 2000 0.08 1600 VGS = 2.5 V 0.04 VGS = 4.5 V 3.0 3.5 Ciss 1200 Coss 800 Crss 400 0.02 0 0.00 0 5 10 15 20 0 25 2 4 6 8 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 6 VDS = - 4 V ID = 5.7 A 1.4 4 3 2 (Normalized) 5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 Output Characteristics 0.10 0.06 0.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 VGS = 4.5 V ID = 5.7 A 1.2 1.0 0.8 1 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 6 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 71922 S09-0868-Rev. D, 18-May-09 Si4501ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 RDS(on) - On-Resistance (Ω) 20 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 0.15 0.10 ID = 5.7 A 0.05 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 100 0.3 80 0.2 Power (W) VGS(th) Variance (V) ID = 250 µA 0.1 60 40 0.0 20 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 1 ms I D - Drain Current (A) 10 Limited by R DS(on)* 10 ms 1 100 ms TA = 25 °C Single Pulse 0.1 0.01 0.1 * VGS 1s 10 s DC 1 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 71922 S09-0868-Rev. D, 18-May-09 www.vishay.com 7 Si4501ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 75 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71922. www.vishay.com 8 Document Number: 71922 S09-0868-Rev. D, 18-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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