Si4501ADY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
-8
RDS(on) (Ω)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
ID (A)
0.018 at VGS = 10 V
8.8
0.027 at VGS = 4.5 V
7.0
0.042 at VGS = - 4.5 V
- 5.7
0.060 at VGS = - 2.5 V
- 4.8
APPLICATIONS
• Level Shift
• Load Switch
S2
SO-8
G2
S1
1
8
D
G1
2
7
D
S2
3
6
D
G2
4
5
D
D
G1
Top View
Ordering Information: Si4501ADY-T1-E3 (Lead (Pb)-free)
Si4501ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
Parameter
Symbol
10 s
P-Channel
Steady State
10 s
Steady State
Drain-Source Voltage
VDS
30
-8
Gate-Source Voltage
VGS
± 20
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
8.8
7
IDM
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
ID
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IS
PD
6.3
- 5.7
5.2
- 4.5
30
V
- 4.1
- 3.3
- 30
1.8
1.0
- 1.8
2.5
1.3
2.5
1.3
1.6
0.84
1.6
0.84
TJ, Tstg
Unit
A
- 1.0
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
P-Channel
Typ.
Max.
Typ.
Max.
40
50
42
50
75
95
76
95
18
23
21
26
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 71922
S09-0868-Rev. D, 18-May-09
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1
Si4501ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
VGS(th)
IGSS
IDSS
VDS = VGS, ID = 250 µA
N-Ch
0.8
1.8
VDS = VGS, ID = - 250 µA
P-Ch
- 0.45
- 1.0
VDS = 0 V, VGS = ± 20 V
N-Ch
± 100
VDS = 0 V, VGS = ± 8 V
P-Ch
± 100
VDS = 30 V, VGS = 0 V
N-Ch
1
VDS = - 8 V, VGS = 0 V
P-Ch
-1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
P-Ch
VDS = 5 V, VGS = 10 V
N-Ch
30
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 20
ID(on)
RDS(on)
gfs
VSD
V
nA
µA
-5
A
VGS = 10 V, ID = 8.8 A
N-Ch
0.015
0.018
VGS = - 4.5 V, ID = - 5.7 A
P-Ch
0.030
0.042
VGS = 4.5 V, ID = 7.0 A
N-Ch
0.022
0.027
VGS = - 2.5 V, ID = - 4.8 A
P-Ch
0.048
0.060
VDS = 15 V, ID = 8.8 A
N-Ch
18
VDS = - 15 V, ID = - 5.7 A
P-Ch
12
IS = 1.8 A, VGS = 0 V
N-Ch
0.73
1.1
IS = - 1.8 A, VGS = 0 V
P-Ch
- 0.75
- 1.1
Ω
S
V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
N-Channel
VDS = 15 V, VGS = 5 V, ID = 8.8 A
P-Channel
VDS = - 4 V, VGS = - 5 V, ID = - 5.7 A
N-Channel
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
P-Channel
VDD = - 4 V, RL = 4 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
IF = 1.8 A, dI/dt = 100 A/µs
Turn-Off Delay Time
td(off)
N-Ch
11.5
20
P-Ch
13.5
20
N-Ch
3
P-Ch
2.2
N-Ch
4
P-Ch
3
nC
N-Ch
15
22
P-Ch
21
40
N-Ch
8
15
P-Ch
45
70
N-Ch
35
50
P-Ch
60
100
N-Ch
10
20
P-Ch
55
85
N-Ch
30
60
P-Ch
50
100
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 71922
S09-0868-Rev. D, 18-May-09
Si4501ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
40
VGS = 10 V thru 5 V
4V
TC = - 55 °C
I D - Drain Current (A)
I D - Drain Current (A)
24
16
3V
125 °C
24
16
8
8
0
0
0
2
4
6
8
0
10
1
2
3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
0.05
2000
0.04
1600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
25 °C
32
32
0.03
VGS = 4.5 V
0.02
VGS = 10 V
4
5
24
30
Ciss
1200
800
Coss
400
0.01
Crss
0
0.00
0
6
12
18
24
0
30
12
18
I D - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
6
VDS = 15 V
ID = 8.8 A
5
4
3
2
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
VGS = 10 V
ID = 8.8 A
1.2
1.0
0.8
1
0
0
3
6
9
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71922
S09-0868-Rev. D, 18-May-09
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3
Si4501ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
0.08
0.06
ID = 8.8 A
0.04
0.02
0.00
1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
100
0.2
80
ID = 250 µA
0.0
Power (W)
VGS(th) Variance (V)
4
- 0.2
60
40
- 0.4
20
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.001
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
I D - Drain Current (A)
1 ms
10
10 ms
1
TA = 25 °C
Single Pulse
0.1
0.01
0.1
* VGS
100 ms
1s
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 71922
S09-0868-Rev. D, 18-May-09
Si4501ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 75 °C/W
t1
t2
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 71922
S09-0868-Rev. D, 18-May-09
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5
Si4501ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
30
VGS = 5 V thru 3.5 V
TC = - 55 °C
24
3V
I D - Drain Current (A)
I D - Drain Current (A)
32
24
2.5 V
16
2V
8
25 °C
125 °C
18
12
6
1.5 V
0
0
2
4
6
8
10
0
1.0
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2000
0.08
1600
VGS = 2.5 V
0.04
VGS = 4.5 V
3.0
3.5
Ciss
1200
Coss
800
Crss
400
0.02
0
0.00
0
5
10
15
20
0
25
2
4
6
8
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
6
VDS = - 4 V
ID = 5.7 A
1.4
4
3
2
(Normalized)
5
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
Output Characteristics
0.10
0.06
0.5
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0
VGS = 4.5 V
ID = 5.7 A
1.2
1.0
0.8
1
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
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6
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 71922
S09-0868-Rev. D, 18-May-09
Si4501ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
RDS(on) - On-Resistance (Ω)
20
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.15
0.10
ID = 5.7 A
0.05
0.00
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
100
0.3
80
0.2
Power (W)
VGS(th) Variance (V)
ID = 250 µA
0.1
60
40
0.0
20
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
1 ms
I D - Drain Current (A)
10
Limited
by R DS(on)*
10 ms
1
100 ms
TA = 25 °C
Single Pulse
0.1
0.01
0.1
* VGS
1s
10 s
DC
1
10
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 71922
S09-0868-Rev. D, 18-May-09
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7
Si4501ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71922.
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Document Number: 71922
S09-0868-Rev. D, 18-May-09
Legal Disclaimer Notice
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Revision: 01-Jan-2022
1
Document Number: 91000