SUD25N04-25
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
40
rDS(on) (W)
ID (A)
0.025 @ VGS = 10 V
25
0.040 @ VGS = 4.5 V
20
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD25N04-25
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)
_ b
TC = 25_C
TC = 125_C
Pulsed Drain Current
15
IDM
50
IS
50
Avalanche Current
IAR
25
L = 0.1 mH
EAR
TA = 25_C
Operating Junction and Storage Temperature Range
A
31
mJ
33b
TC = 25_C
Maximum Power Dissipation
V
25
ID
Continuous Source Current (Diode Conduction)b
Repetitive Avalanche Energy (Duty Cycle v 1%)
Unit
PD
W
3b
TJ, Tstg
_C
–55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
Junction-to-Ambientb
Junction-to-Case
Steady State
RthJA
RthJC
Typical
Maximum
20
25
40
50
3.7
4.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
www.vishay.com
2-1
SUD25N04-25
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Max
2.0
3.0
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125_C
50
VDS = 40 V, VGS = 0 V, TJ = 175_C
150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
IDSS
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 25 A
Drain-Source On-State Resistanceb
Forward Transconductanceb
rDS(on)
gfs
V
50
nA
mA
m
A
0.02
0.025
VGS = 10 V, ID = 25 A, TJ = 125_C
0.040
VGS = 10 V, ID = 25 A, TJ = 175_C
0.053
VGS = 4.5 V, ID = 10 A
0.031
VDS = 15 V, ID = 25 A
15
W
0.040
S
Dynamica
Input Capacitance
Ciss
510
VGS = 0 V, VDS = 25 V, F = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
65
Total Gate Chargec
Qg
13
Gate-Source
Chargec
Qgs
VDS = 20 V, VGS = 10 V, ID = 25 A
125
pF
20
2.5
nC
Gate-Drain Chargec
Qgd
3
Turn-On Delay Timec
td(on)
5
10
47
70
15
30
5
10
Rise
Timec
tr
Turn-Off Delay Timec
Fall Timec
td(off)
VDD = 20 V, RL = 0.8 W
ID ^ 25 A, VGEN = 10 V, RG = 2.5 W
tf
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
50
A
Voltageb
VSD
IF = 25 A, VGS = 0 V
1.1
1.3
V
Source-Drain Reverse Recovery Time
trr
IF = 25 A, di/dt = 100 A/ms
17
30
ns
Diode Forward
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
www.vishay.com
2-2
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
SUD25N04-25
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
50
VGS = 10 V
TC = –55_C
9V
80
40
25_C
I D – Drain Current (A)
I D – Drain Current (A)
8V
7V
60
6V
40
5V
20
30
125_C
20
10
2, 3, 4 V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
0.12
25
TC = –55_C
0.10
r DS(on)– On-Resistance ( W )
g fs – Transconductance (S)
20
25_C
15
125_C
10
5
0
0.08
0.06
VGS = 4.5 V
0.04
VGS = 10 V
0.02
0.00
0
10
20
30
0
40
10
20
ID – Drain Current (A)
40
50
20
25
ID – Drain Current (A)
Capacitance
Gate Charge
20
V GS – Gate-to-Source Voltage (V)
1000
800
C – Capacitance (pF)
30
600
Ciss
400
Coss
200
Crss
0
0
VDS = 20 V
ID = 25 A
16
12
8
4
0
8
16
24
32
VDS – Drain-to-Source Voltage (V)
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
40
0
5
10
15
Qg – Total Gate Charge (nC)
www.vishay.com
2-3
SUD25N04-25
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4
100
VGS = 10 V
ID = 25 A
I S – Source Current (A)
r DS(on)– On-Resistance ( W )
(Normalized)
2.0
1.6
1.2
0.8
TJ = 175_C
10
TJ = 25_C
0.4
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
TJ – Junction Temperature (_C)
0.3
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
30
100
100 ms
I D – Drain Current (A)
I D – Drain Current (A)
10 ms
Limited by rDS(on)
24
18
12
10
1 ms
10 ms
100 ms
1 s, dc
1
TC = 25_C
Single Pulse
6
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
2-4
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1