SUD25N04-25

SUD25N04-25 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) 0.025 @ VGS = 10 V 0.040 @ VGS = 4.5 V ID (A) 25 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD25N04-25 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)b Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IS IAR EAR Symbol VDS VGS Limit 40 "20 25 15 50 50 25 31 33b 3b –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambientb Junction-to-Case Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71129 S-04558—Rev. B, 27-Aug-01 www.vishay.com Steady State RthJA RthJC Symbol Typical 20 40 3.7 Maximum 25 50 4.5 Unit _C/W 2-1 SUD25N04-25 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 25 A Drain-Source On-State Resistanceb VGS = 10 V, ID = 25 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 25 A, TJ = 175_C VGS = 4.5 V, ID = 10 A Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 0.031 15 50 0.02 0.025 0.040 0.053 0.040 S W 40 V 1.0 2.0 3.0 "100 1 50 150 A mA nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 20 V, RL = 0.8 W ID ^ 25 A, VGEN = 10 V, RG = 2.5 W VDS = 20 V, VGS = 10 V, ID = 25 A VGS = 0 V, VDS = 25 V, F = 1 MHz 510 125 65 13 2.5 3 5 47 15 5 10 70 30 10 ns 20 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 25 A, VGS = 0 V IF = 25 A, di/dt = 100 A/ms 1.1 17 50 1.3 30 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 71129 S-04558—Rev. B, 27-Aug-01 SUD25N04-25 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 V 80 I D – Drain Current (A) 9V 8V 7V 60 6V 40 I D – Drain Current (A) 30 125_C 20 40 25_C 50 TC = –55_C Transfer Characteristics 20 5V 2, 3, 4 V 10 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 25 TC = –55_C 20 25_C 15 125_C 10 r DS(on)– On-Resistance ( W ) g fs – Transconductance (S) 0.10 0.12 On-Resistance vs. Drain Current 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 5 0 0 10 20 ID – Drain Current (A) 30 40 0.00 0 10 20 30 40 50 ID – Drain Current (A) Capacitance 1000 20 Gate Charge 800 C – Capacitance (pF) V GS – Gate-to-Source Voltage (V) 16 VDS = 20 V ID = 25 A 600 Ciss 12 400 8 200 Coss 4 0 0 Crss 8 16 24 32 40 0 0 5 10 15 20 25 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 71129 S-04558—Rev. B, 27-Aug-01 www.vishay.com 2-3 SUD25N04-25 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.4 VGS = 10 V ID = 25 A I S – Source Current (A) 100 Source-Drain Diode Forward Voltage 2.0 r DS(on)– On-Resistance ( W ) (Normalized) 1.6 TJ = 175_C 1.2 10 0.8 TJ = 25_C 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 30 100 Limited by rDS(on) I D – Drain Current (A) 10 ms 100 ms 10 Safe Operating Area 24 I D – Drain Current (A) 18 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms 1 s, dc 12 6 0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 0.1 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71129 S-04558—Rev. B, 27-Aug-01 1 10 30 2-4