SUD25N04-25-E3

SUD25N04-25 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 25 0.040 @ VGS = 4.5 V 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD25N04-25 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ b TC = 25_C TC = 125_C Pulsed Drain Current 15 IDM 50 IS 50 Avalanche Current IAR 25 L = 0.1 mH EAR TA = 25_C Operating Junction and Storage Temperature Range A 31 mJ 33b TC = 25_C Maximum Power Dissipation V 25 ID Continuous Source Current (Diode Conduction)b Repetitive Avalanche Energy (Duty Cycle v 1%) Unit PD W 3b TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Junction-to-Ambientb Junction-to-Case Steady State RthJA RthJC Typical Maximum 20 25 40 50 3.7 4.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71129 S-04558—Rev. B, 27-Aug-01 www.vishay.com 2-1 SUD25N04-25 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 25 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs V 50 nA mA m A 0.02 0.025 VGS = 10 V, ID = 25 A, TJ = 125_C 0.040 VGS = 10 V, ID = 25 A, TJ = 175_C 0.053 VGS = 4.5 V, ID = 10 A 0.031 VDS = 15 V, ID = 25 A 15 W 0.040 S Dynamica Input Capacitance Ciss 510 VGS = 0 V, VDS = 25 V, F = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 65 Total Gate Chargec Qg 13 Gate-Source Chargec Qgs VDS = 20 V, VGS = 10 V, ID = 25 A 125 pF 20 2.5 nC Gate-Drain Chargec Qgd 3 Turn-On Delay Timec td(on) 5 10 47 70 15 30 5 10 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDD = 20 V, RL = 0.8 W ID ^ 25 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 50 A Voltageb VSD IF = 25 A, VGS = 0 V 1.1 1.3 V Source-Drain Reverse Recovery Time trr IF = 25 A, di/dt = 100 A/ms 17 30 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 71129 S-04558—Rev. B, 27-Aug-01 SUD25N04-25 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 50 VGS = 10 V TC = –55_C 9V 80 40 25_C I D – Drain Current (A) I D – Drain Current (A) 8V 7V 60 6V 40 5V 20 30 125_C 20 10 2, 3, 4 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.12 25 TC = –55_C 0.10 r DS(on)– On-Resistance ( W ) g fs – Transconductance (S) 20 25_C 15 125_C 10 5 0 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 10 20 30 0 40 10 20 ID – Drain Current (A) 40 50 20 25 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 1000 800 C – Capacitance (pF) 30 600 Ciss 400 Coss 200 Crss 0 0 VDS = 20 V ID = 25 A 16 12 8 4 0 8 16 24 32 VDS – Drain-to-Source Voltage (V) Document Number: 71129 S-04558—Rev. B, 27-Aug-01 40 0 5 10 15 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUD25N04-25 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.4 100 VGS = 10 V ID = 25 A I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) 2.0 1.6 1.2 0.8 TJ = 175_C 10 TJ = 25_C 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 30 100 100 ms I D – Drain Current (A) I D – Drain Current (A) 10 ms Limited by rDS(on) 24 18 12 10 1 ms 10 ms 100 ms 1 s, dc 1 TC = 25_C Single Pulse 6 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 71129 S-04558—Rev. B, 27-Aug-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1