SUD25N15-52

SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 150 FEATURES ID (A) 25 23 rDS(on) (W) 0.052 @ VGS = 10 V 0.060 @ VGS = 6 V D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested APPLICATIONS D Primary Side Switch TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD25N15-52 SUD25N15-52—E3 (Lead Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 150 "20 25 14.5 50 25 25 31 136b 3a −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71768 S-40272—Rev. C, 23-Feb-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit _C/W 1 SUD25N15-52 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 150 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 150 V, VGS = 0 V, TJ = 125_C VDS = 150 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 5 A, TJ = 125_C VGS = 10 V, ID = 5 A, TJ = 175_C VGS = 6 V, ID = 5 A Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 0.047 40 50 0.042 0.052 0.109 0.145 0.060 S W 150 2 4 "100 1 50 250 A mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 50 V, RL = 3 W V, ID ^ 25 A, VGEN = 10 V, Rg = 2.5 W 1 15 70 25 60 VDS = 75 V, VGS = 10 V, ID = 25 A , , VGS = 0 V, VDS = 25 V, F = 1 MHz 1725 216 100 33 9 12 3 25 100 40 40 ns W 40 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 25 A, VGS = 0 V IF = 25 A, di/dt = 100 A/ms 0.9 95 50 1.5 140 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71768 S-40272—Rev. C, 23-Feb-04 SUD25N15-52 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 7 V 40 I D − Drain Current (A) I D − Drain Current (A) 6V 50 Transfer Characteristics 40 30 30 20 5V 4V 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) 20 TC = 125_C 25_C 10 10 −55_C 0 0 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Transconductance 60 50 g fs − Transconductance (S) 40 30 20 10 0 0 10 20 30 40 50 TC = −55_C 25_C r DS(on)− On-Resistance ( W ) 0.10 On-Resistance vs. Drain Current 0.08 125_C 0.06 VGS = 6 V 0.04 VGS = 10 V 0.02 0.00 0 10 20 30 40 50 ID − Drain Current (A) 2500 ID − Drain Current (A) 20 VDS = 75 V ID = 25 A Capacitance Gate Charge 2000 C − Capacitance (pF) Ciss 1500 V GS − Gate-to-Source Voltage (V) 16 12 1000 8 500 Crss 4 Coss 0 0 30 60 90 120 150 VDS − Drain-to-Source Voltage (V) 0 0 10 20 30 40 50 60 Qg − Total Gate Charge (nC) Document Number: 71768 S-40272—Rev. C, 23-Feb-04 www.vishay.com 3 SUD25N15-52 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.0 2.5 rDS(on) − On-Resiistance (Normalized) 2.0 1.5 1.0 0.5 0.0 −50 VGS = 10 V ID = 5 A I S − Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C −25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) TJ − Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 30 25 I D − Drain Current (A) I D − Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 175 TC − Case Temperature (_C) 10 1 ms 10 ms TC = 25_C Single Pulse 100 ms 1 s, dc 100 Safe Operating Area 10 ms 100 ms Limited by rDS(on) 1 0.1 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 Normalized Thermal Transient Impedance, Junction-to-Case 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 4 Document Number: 71768 S-40272—Rev. C, 23-Feb-04