SUD25N15-52-T4-E3

SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 • • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 • Primary Side Switch D Drain Connected to Tab G D S G Top View Ordering Information: SUD25N15-52-E3 (Lead (Pb)- free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 14.5 50 Continuous Source Current (Diode Conduction) IS 25 Avalanche Current IAR 25 EAR 31 Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C A mJ 136b PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range V 25 ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. Document Number: 71768 S09-1501-Rev. D, 10-Aug-09 www.vishay.com 1 SUD25N15-52 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) 4 VDS = 150 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V Forward Transconductanceb RDS(on) µA A 0.042 0.052 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.109 VGS = 10 V, ID = 5 A, TJ = 175 °C 0.145 gfs nA 250 50 VGS = 10 V, ID = 5 A Drain-Source On-State Resistanceb V VGS = 6 V, ID = 5 A 0.047 VDS = 15 V, ID = 25 A 40 Ω 0.060 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg c td(on) Turn-Off Delay Timec td(off) Turn-On Delay Time Rise Timec Fall Timec tr 1725 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 216 100 33 VDS = 75 V, VGS = 10 V, ID = 25 A 40 nC 9 12 1 VDD = 50 V, RL = 3 Ω ID ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω tf 3 15 25 70 100 25 40 60 90 Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °C Pulsed Current ISM 50 A Diode Forward Voltageb VSD IF = 25 A, VGS = 0 V 0.9 1.5 V trr IF = 25 A, dI/dt = 100 A/µs 95 140 ns Source-Drain Reverse Recovery Time Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71768 S09-1501-Rev. D, 10-Aug-09 SUD25N15-52 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 V thru 7 V 6V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 5V 10 30 20 TC = 125 °C 25 °C 10 - 55 °C 4V 0 0 0 2 4 6 8 0 10 1 2 Output Characteristics 5 6 7 0.10 TC = - 55 °C 40 125 °C 30 20 R DS(on) - On-Resistance (Ω) 25 °C 50 g fs - Transconductance (S) 4 Transfer Characteristics 60 10 0 0.08 0.06 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 10 20 30 40 50 0 10 20 I D - Drain Current (A) 30 40 50 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 2500 VGS - Gate-to-Source Voltage (V) 20 2000 C - Capacitance (pF) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ciss 1500 1000 500 Crss VDS = 75 V ID = 25 A 16 12 8 4 Coss 0 0 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71768 S09-1501-Rev. D, 10-Aug-09 150 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD25N15-52 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 3.0 VGS = 10 V ID = 5 A I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 2.0 1.5 1.0 TJ = 150 °C 10 TJ = 25 °C 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 0.3 0 175 0.6 0.9 1.2 TJ - Junction Temperature ( °C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 30 100 10 µs Limited by R DS(on)* 25 I D - Drain Current (A) I D - Drain Current (A) 100 µs 20 15 10 10 1 ms 10 ms 1 TC = 25 °C Single Pulse 5 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 100 ms 1 s, DC 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71768. www.vishay.com 4 Document Number: 71768 S09-1501-Rev. D, 10-Aug-09 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 03-Oct-2022 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34      ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347 Revision: 03-Oct-2022 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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