VEMT4700-GS08

VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° 94 8554 • Base terminal connected • Package notch indicates collector • Package matched with IR emitter series VSML3710 DESCRIPTION • Floor life: 168 h, MSL 3, acc. J-STD-020 VEMT4700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-3 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. • Lead (Pb)-free reflow soldering • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors • Light sensors PRODUCT SUMMARY COMPONENT VEMT4700 Ica (mA) ϕ (deg) λ0.1 (nm) 0.5 ± 60 450 to 1080 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT4700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-3 VEMT4700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-3 Note • MOQ: minimum order quantity ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81501 Rev. 1.4, 14-Jul-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 1 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 5 V IC 50 mA ICM 100 mA PV 100 mW Collector current tp/T ≤ 0.1, tp ≤ 10 μs Collector peak current Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Acc. reflow solder profile fig. 10 Tsd 260 °C Soldered on PCB with pad dimensions: 4 mm x 4 mm RthJA 400 K/W Soldering temperature Thermal resistance junction/ambient PV - Power Dissipation Limit (mW) 125 R thJA = 400 K/W 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 20376 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. Collector emitter breakdown voltage PARAMETER IC = 1 mA V(BR)CEO 70 Collector emitter dark current VCE = 20 V, E = 0 ICEO VCE = 5 V, f = 1 MHz, E = 0 CCEO Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica Collector emitter capacitance Collector light current TYP. MAX. UNIT V 1 0.25 200 nA 3 pF 0.5 mA Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 850 nm Range of spectral bandwidth λ0.1 450 to 1080 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.15 VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 1 kΩ tr/tf 6 μs VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 100 Ω tr/tf 2 μs VS = 5 V, IC = 2 mA, RL = 100 Ω fc 180 kHz Collector emitter saturation voltage Rise time, fall time Cut-off frequency www.vishay.com 2 For technical questions, contact: detectortechsupport@vishay.com 0.3 V Document Number: 81501 Rev. 1.4, 14-Jul-10 VEMT4700 Silicon NPN Phototransistor Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ica - Collector Light Current (mA) 10 103 VCE = 20 V 102 101 10 40 60 80 Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 2.0 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8239 0.1 10 f = 1 MHz 8 6 4 2 0 0.1 1 100 10 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 10 ton/toff - Turn-on/Turn-off Time (µs) 8 1 0.1 VCE = 5 V λ = 950 nm 0.01 0.001 0.01 94 8316 100 10 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 94 8294 Fig. 3 - Relative Collector Current vs. Ambient Temperature 1 VCE - Collector Emitter Voltage (V) 94 8317 Fig. 2 - Collector Dark Current vs. Ambient Temperature Ica rel - Relative Collector Current 1 100 Tamb - Ambient Temperature (°C) 94 8304 Ica - Collector Light Current (mA) λ = 950 nm 0.1 20 CCEO - Collector Emitter Capacitance (pF) ICEO - Collector Dark Current (nA) 104 VCE = 5 V RL = 100 Ω λ = 950 nm 6 4 toff 2 ton 0 0.1 1 10 Ee - Irradiance (mW/cm²) Fig. 4 - Collector Light Current vs. Irradiance Document Number: 81501 Rev. 1.4, 14-Jul-10 0 94 8293 2 4 6 8 10 12 14 IC - Collector Current (mA) Fig. 7 - Turn-on/Turn-off Time vs. Collector Current For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor 10° 20° 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° 1.0 Srel - Relative Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 80° 0 400 600 800 0.6 1000 0.4 0.2 0 94 8318 λ - Wavelength (nm) 94 8348 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters Mounting Pad Layout area covered with solder resist 4 0.5 2.6 (2.8) 1.2 4 1.6 (1.9) Dimensions: IR and vaporphase (wave soldering) 21439 www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81501 Rev. 1.4, 14-Jul-10 VEMT4700 Silicon NPN Phototransistor Vishay Semiconductors SOLDER PROFILE Fig. 11 - Blister Tape 3.5 3.1 300 255 °C 240 °C 217 °C Temperature (°C) 250 2.2 2.0 max. 260 °C 245 °C 5.75 5.25 200 max. 30 s 3.6 3.4 150 4.0 3.6 8.3 7.7 max. 100 s max. 120 s 1.85 1.65 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95 94 8668 0 0 50 19841 100 150 200 250 300 Fig. 12 - Tape Dimensions in mm for PLCC-3 Time (s) MISSING DEVICES Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. > 160 mm DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. TAPE AND REEL PLCC-3 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 94 8158 Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Adhesive tape Blister tape Component cavity Document Number: 81501 Rev. 1.4, 14-Jul-10 94 8670 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 5 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor COVER TAPE REMOVAL FORCE 10.0 9.0 120° 4.5 3.5 2.5 1.5 The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 13.00 12.75 63.5 60.5 Identification Label: Vishay type group tape code production code quantity 14.4 max. 180 178 94 8665 Fig. 14 - Dimensions of Reel-GS08 10.4 8.4 120° 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 Identification Label: Vishay type group tape code production code quantity 321 329 14.4 max. 18857 Fig. 15 - Dimensions of Reel-GS18 www.vishay.com 6 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81501 Rev. 1.4, 14-Jul-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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