2SA1774

UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 MARKING A5 1 2 3 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATINGS -60 -50 -6 -0.15 0.15 150 -55 ~ +150 UNIT V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) fT Cob TEST CONDITIONS IC = -50µA IC = -1mA IE = -50µA VCB= -60V VEB= -6V VCE= -6V, IC= -1mA IC=-50mA, IB=−5mA VCE= -12V, IE=2mA, f=100MHz VCB= -12V, IE=0A, f=1MHz MIN TYP MAX -60 -50 -6 -0.1 -0.1 560 -0.5 140 4.0 5.0 UNIT V V V µA µA V MHz pF 120 CLASSIFICATION OF HFE1 RANK Range Q 120 ~ 270 R 180 ~ 390 S 270 ~ 560 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R221-011,A UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR Grounded emitter output characteristics (I) -10 ELECTRICAL CHARACTERISTICS CURVES Grounded emitter propagation characteristics -50 -35.0 Ta=25℃ -31.5 -28.0 -24.5 -21.0 -17.5 -14.0 -10.5 -7.0 -3.5μA IB=0 0 -0.4 -0.8 -1.2 -1.6 -2.0 COLLECTOR CURRENT, Ic (mA) COLLECTOR CURRENT, I C (mA) -10 Ta=100℃ 25℃ -20 .40℃ -5 -2 -1 VCE= -6V -8 -6 -4 -0.5 -0.2 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -2 0 BASE TO EMITTER VOLTAGE, V BE (V) COLLECTOR TO MITTER VOLTAGE, V CE (V) Grounded emitter output characteristics (II) -100 DC current gain vs. collector current (I) 500 COLLECTOR CURRENT, I C (mA) DC CURRENT GAIN, hFE Ta=25℃ -500 -80 -450 -400 -350 -60 -300 Ta=25℃ VCE= -5V -3V -1V -250 -200 -150 -100 200 -40 100 -20 -50μA IB=0 50 0 -1 -2 -3 -4 -5 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO MITTER VOLTAGE, V CE (V) COLLECTOR CURRENT, I C (mA) 500 COLLECTOR SATURATION VOLTAGE, V CE(sat) (V) DC current gain vs. collector current (II) Ta=100℃ 25℃ -40℃ Collector-emitter saturation voltage vs. collector current (I) -1 -0.5 Ta=25℃ DC CURRENT GAIN, h FE 200 100 -0.2 IC/IB=50 -0.1 -0.05 20 10 50 VCE= -6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT, I C (mA) COLLECTOR CURRENT, I C (mA) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R221-011,A UTC 2SA1774 COLLECTOR SATURATION VOLTAGE , V CE(sat) (V) PNP EPITAXIAL SILICON TRANSISTOR Gain bandwidth product vs. emitter current TRANSITION FREQUENCY, f T (MHz) 1000 500 Collector-emitter saturation voltage vs. collector current (II) -1 -0.5 IC/IB=10 Ta=25℃ VCE= -12V -0.2 -0.1 200 Ta=100℃ 25℃ -40℃ 100 -0.05 50 0.5 1 2 5 10 20 50 100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT, I C (mA) EMITTER CURRENT, I E (mA) Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage COLLECTOR OUTPUT CAPACITANCE, Cob (pF) EMITTER INPUT CAPACITANCE, Cib (pF) 20 Cib 10 Co b 5 Ta=25℃ f =1MHz IE = 0A IC = 0A 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE, V CB (V) EMITTER TO BASE VOLTAGE, V EB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R221-011,A