WMBT3906

PNP EPITAXIAL SILICON TRANSISTORS High Voltage Transistor SOT— 23 — WMBT3906 ! ! Power Dissipation: 225mW Collector Current: Max. 0.2A 1. BASE 2. EMITTER 3. COLLECTOR GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Limits Characteristic Symbol Test Conditions Units MIN. 40 40 5.0 50 60 80 100 60 30 650 MAX. Collector-emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current BVCEO BVCBO BVEBO ICEX hFE1 hFE2 hFE3 hFE4 hFE5 BVESAT1 BVESAT2 VCE(SAT)1 VCE(SAT)2 fT IC=1mA IC=100µA IE=10µA VCE=30V, VBE=3V VCE=1V, IC=100µA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA,IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10, VCE=20V f=100MHz V V V nA DC Current Gain 300 850 mV Base-Emitter Saturation Voltage 950 mV 250 mV Collector-Emitter Saturation Voltage 400 mV Transition Frequency 250 MHz Collector-Base COB VCB=5V, f=1MHz 4.5 PF Capacitance NOTES: Due to probe testing limitations, only the DC parameters are tested. Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com