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SBP13009-O

SBP13009-O

  • 厂商:

    WINSEMI

  • 封装:

  • 描述:

    SBP13009-O - High Voltage Fast-Switching NPN Power Transistor - Shenzhen Winsemi Microelectronics Co...

  • 数据手册
  • 价格&库存
SBP13009-O 数据手册
SBP13009-O High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. C E TO220 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IB M PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Te s t Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 12 25 6.0 12 100 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.25 40 Units ℃/W ℃/W Jan 2008. Rev. 0 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. T01-3 SBP13009-O Electrical Characteristics (TC=25℃ unless otherwise noted) Value Parameter Te s t Conditions Min 400 Typ Max 1.0 1.5 3.0 2.0 1.2 1.6 1.5 1.0 5.0 40 40 V V Symbol VCEO(sus) Units V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A VCE(sat) Collector-Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100℃ I Ic=5.0A,Ib=1.0A - V VBE(sat) Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A Tc=100℃ - V ICBO Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Vcb=700V Vcb=700V, Tc=100℃ Vce=5V,Ic=5.0A Vce=5V, Ic=8.0A 10 6 - - mA hFE ts tf Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time VCC=125V , IB1=1.6A , Tp=25㎲ Ic=6.0A IB2=-1.6A 1.5 0.17 3.0 0.4 ㎲ ts tf VCC=15V ,Ic=5A IB1=1.6A , Vbe(off)=5V L=0.35mH,Vclamp=300V VCC=15V ,Ic=1A IB1=0.4A , Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ - 0.8 0.04 2.0 0.1 ㎲ ts tf - 0.8 0.05 2.5 0.15 ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Steady, keep you advance SBP13009-O Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/5 Steady, keep you advance SBP13009-O Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Steady, keep you advance SBP13009-O TO-220 Package Dimension Unit: mm 5/5 Steady, keep you advance
SBP13009-O 价格&库存

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