PSMN4R1-30YLC,115

PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 12 February 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • • • High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 3. Applications • • • • • DC-to-DC converters Load switching Power OR-ing Server power supplies Sync rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 92 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 67 W Tj junction temperature -55 - 175 °C - 4.75 5.7 mΩ - 3.65 4.35 mΩ - 3.5 - nC Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; Fig. 14; Fig. 15 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit QG(tot) total gate charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; - 11 - nC Fig. 14; Fig. 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 4 LFPAK; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package PSMN4R1-30YLC Name Description Version LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PSMN4R1-30YLC 4C130L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 30 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - 92 A VGS = 10 V; Tmb = 100 °C; Fig. 1 - 65 A PSMN4R1-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 2 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Max Unit IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 367 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 67 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C VESD electrostatic discharge voltage MM (JEDEC JESD22-A115) 270 - V Source-drain diode IS source current Tmb = 25 °C - 61 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 367 A VGS = 10 V; Tj(init) = 25 °C; ID = 92 A; - 21 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 30 V; RGS = 50 Ω; unclamped; Fig. 3 003a a f900 1 00 03na19 120 ID (A) Pder (%) 80 80 60 40 40 20 0 Fig. 1. 0 50 10 0 0 150 200 Tmb ( C) Continuous drain current as a function of mounting base temperature PSMN4R1-30YLC Product data sheet Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 12 February 2013 50 © Nexperia B.V. 2017. All rights reserved 3 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 003a a f 914 103 IAL (A) 102 (1) 10 (2) 1 10-1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms ) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaf901 104 ID (A) 103 Limit R DSon = VDS / ID 10 2 tp =10 µ s 100 µ s 10 DC 1 ms 10 ms 100 ms 1 10-1 10-1 Fig. 4. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 2.05 2.24 K/W PSMN4R1-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 4 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 003aaf902 10 Z th(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 P 0.02 single shot 10 tp T δ= tp -2 10-5 1e-6 Fig. 5. 10-4 10-3 10-2 t T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 1.05 1.58 1.95 V ID = 10 mA; VDS = VGS; Tj = 150 °C 0.5 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C - - 2.25 V VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 100 µA VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 20 A; Tj = 25 °C; - 4.75 5.7 mΩ - - 9.4 mΩ - 3.65 4.35 mΩ - - 7.25 mΩ - 1.9 3.8 Ω Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 10; Fig. 11 Fig. 12 VGS = 4.5 V; ID = 20 A; Tj = 150 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 20 A; Tj = 150 °C; Fig. 12; Fig. 13 RG gate resistance PSMN4R1-30YLC Product data sheet f = 1 MHz All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 5 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit ID = 20 A; VDS = 15 V; VGS = 10 V; - 23 - nC - 11 - nC ID = 0 A; VDS = 0 V; VGS = 10 V - 20 - nC gate-source charge ID = 20 A; VDS = 15 V; VGS = 4.5 V; - 3.5 - nC QGS(th) pre-threshold gatesource charge Fig. 14; Fig. 15 - 2.3 - nC QGS(th-pl) post-threshold gatesource charge - 1.2 - nC QGD gate-drain charge - 3.5 - nC VGS(pl) gate-source plateau voltage ID = 20 A; VDS = 15 V; Fig. 14; Fig. 15 - 2.66 - V Ciss input capacitance VDS = 15 V; VGS = 0 V; f = 1 MHz; - 1502 - pF Coss output capacitance Tj = 25 °C; Fig. 16 - 316 - pF Crss reverse transfer capacitance - 106 - pF td(on) turn-on delay time VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V; - 16 - ns tr rise time RG(ext) = 4.7 Ω - 19 - ns td(off) turn-off delay time - 24 - ns tf fall time - 10 - ns Qoss output charge - 8 - nC Dynamic characteristics QG(tot) total gate charge Fig. 14; Fig. 15 ID = 20 A; VDS = 15 V; VGS = 4.5 V; Fig. 14; Fig. 15 QGS VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.1 V trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 23 - ns Qr recovered charge VDS = 15 V - 15 - nC ta reverse recovery rise time VGS = 0 V; IS = 20 A; dIS/dt = -100 A/µs; - 13.5 - ns - 9.5 - ns tb VDS = 15 V; Fig. 18 reverse recovery fall time PSMN4R1-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 6 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 003a a f 903 1 00 ID (A) 10 80 4.5 003a a f 904 16 R DS on (mW) 3 .5 VGS (V) =3 .0 60 12 2 .8 40 8 2 .6 4 20 2 .4 2 .2 0 Fig. 6. 0 1 2 3 VDS (V) 0 4 Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values 003a a f 909 120 gfs (S ) 100 0 4 8 12 V GS (V) 16 Drain-source on-state resistance as a function of gate-source voltage; typical values 003a a f 911 1 00 ID (A) 80 80 60 60 40 40 0 Fig. 8. Tj = 150 C 20 20 0 20 40 60 80 ID (A) 0 100 Forward transconductance as a function of drain current; typical values PSMN4R1-30YLC Product data sheet Fig. 9. 0 2 3 VGS (V) 4 Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 12 February 2013 1 Tj = 2 5 C © Nexperia B.V. 2017. All rights reserved 7 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 003a a f 908 10-1 ID (A) 10-2 003a a f 907 3 VGS (th) (V) Max (1mA) Min 10-3 Typ I D=5mA 2 Ma x 1mA 10-4 1 Min (5mA) 10-5 10-6 0 1 2 VGS (V) 0 -6 0 3 Fig. 10. Sub-threshold drain current as a function of gate-source voltage 2.6 2.8 60 120 VGS=10 V a 20 180 003a a f 906 2 3.0 Tj ( C) Fig. 11. Gate-source threshold voltage as a function of junction temperature 003a a f 905 25 RDS on (mW) 0 1.5 4.5V 15 1 10 VGS (V) =3.5 5 0.5 4.5 10 0 0 20 40 60 80 ID (A) 0 -60 100 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values PSMN4R1-30YLC Product data sheet 0 60 120 Tj ( C) 180 Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 8 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 003a a f 912 10 VDS VGS (V) ID 8 VGS(pl) 6 24V VGS(th) VGS 15V 4 QGS1 VDS = 6V QGS2 QGS QGD QG(tot) 2 003aaa508 0 Fig. 14. Gate charge waveform definitions 0 10 20 QG (nC) 30 Fig. 15. Gate-source voltage as a function of gate charge; typical values 003a a f 910 104 003a a f 913 1 00 IS (A) C (pF) 80 Cis s 103 60 Cos s 40 Crs s 102 20 Tj = 15 0 C 10 10-1 1 10 VDS (V) 0 102 0 0.3 Tj = 25 C 0.6 0.9 VS D (V) 1.2 Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain as a function of drain-source voltage; typical voltage; typical values values PSMN4R1-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 9 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 003a a f 444 ID (A) trr ta tb 0 0.25 IR M IRM t (s ) Fig. 18. Reverse recovery timing definition PSMN4R1-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 10 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 11. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X 0 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-03-16 11-03-25 MO-235 Fig. 19. Package outline LFPAK; Power-SO8 (SOT669) PSMN4R1-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 11 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 12 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN4R1-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 13 / 14 PSMN4R1-30YLC Nexperia N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 12 February 2013 PSMN4R1-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © Nexperia B.V. 2017. All rights reserved 14 / 14