S9015

S9015 Silicon Epitaxial Planar Transistor FEATURES SOT-23 A z z z Complementary To S9014. E Excellent HFE Linearity. K B Min Max A 2.70 3.10 B 1.10 1.50 C Power dissipation.(PC=0.2W) D J D APPLICATIONS z Dim G H C 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J Low frequency , low noise amplifier. 1.0 Typical K 0.1 Typical 2.20 2.60 All Dimensions in mm ORDERING INFORMATION Type No. Marking Package Code S9015 M6 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com S9015 Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-5V,IC=-1mA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=- 10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB= -10mA -1 V Transition frequency fT VCE=-5V, IC= -10mA f=30MHz CLASSIFICATION OF MAX 200 UNIT 1000 100 MHz hFE(1) Rank L H Range 200-450 450-1000 ht t p : // Revision:20170701-P1 TYP www.lgesemi .c o m mail:lge@lgesemi.com S9015 Silicon Epitaxial Planar Transistor TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Device Package Shipping S9015 SOT-23 3000/Tape&Reel ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com