S9015

山东晶导微电子股份有限公司 S9015 Jingdao Microelectronics co.LTD General Purpose Transistor PNP Silicon FEATURES • Complementary to S9014 SOT-23 3 3 COLLECTOOR 1 BASE DEVICE MARKING S9015 = M6 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO -45 Vdc Collector–Base Voltage V CBO -50 Vdc Emitter–Base Voltage V EBO -5.0 Vdc IC -100 mAdc Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 200 mW T J ,T stg –55 to +150 °C Total Device Dissipation FR– 5 Board, (1) T A = 25°C Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(3) (I C = - 100 µ Adc, I B = 0) V (BR)CEO -45 – Vdc Collector–Base Breakdown Voltage (I C = -100 µAdc, I E = 0) V (BR)CBO -50 – Vdc Emitter–Base Breakdown Voltage (I E = -100 µAdc, I C = 0) V (BR)EBO -5.0 – Vdc Collector cut-off current (V CB =-50 Vdc, I E = 0 ) I CBO – -0.1 uAdc Emitter cut-off current (V EB = -5Vdc, I C = 0 ) I EBO – -0.1 uAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width