S9015

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR (PNP) FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC = -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=-5V, IC= -1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V fT Transition frequency VCE=-5V, IC= -10mA f=30MHz 150 MHz CLASSIFICATION OF hFE Rank Range L H 200-450 450-1000 B,Dec,2011 S9015 Typical Characterisitics hFE Static Characteristic -8 COMMON EMITTER Ta=25℃ Ta=100℃ -18uA -6 IC -16uA DC CURRENT GAIN -14uA -12uA -4 Ta=25℃ hFE (mA) -20uA COLLECTOR CURRENT —— IC 1000 -10uA -8uA -6uA -2 100 -4uA COMMON EMITTER VCE= -5V IB=-2uA -0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 —— VCE 10 -0.1 -8 -1 (V) -10 COLLECTOR CURRENT IC VBEsat —— IC -100 (mA) IC -2 -1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ -0.1 Ta=100℃ Ta=25℃ Ta=100℃ β=10 β=10 -0.01 -0.1 -0.2 -1 -10 COLLECTOR CURRENT IC IC -100 -10 COLLECTOR CURRENT —— VBE fT Ta=100℃ (mA) IC —— TRANSITION FREQUENCY fT -10 -100 IC (MHz) 1000 (mA) IC COLLECTOR CURRENT -1 (mA) -100 Ta=25℃ -1 COMMON EMITTER VCE=-5V -0.1 -0.0 -0.2 -0.3 -0.6 -0.9 100 COMMON EMITTER VCE=-5V Ta=25℃ 10 -0.1 -1.2 -1 BASE-EMMITER VOLTAGE VBE (V) Cob/ Cib -10 COLLECTOR CURRENT —— VCB/ VEB PC 250 30 —— IC -100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) 10 C (pF) Ta=25 ℃ Cib CAPACITANCE Cob 1 -0.1 -1 REVERSE VOLTAGE -10 VR (V) -20 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Dec,2011