SLG59H1005V

 SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output General Description Pin Configuration The SLG59H1005V is a high-performance, self-powered 50 mΩ NMOS load switch with back-to-back reverse-current blocking designed for all 4.5 V to 22 V power rails up to 3 A. Using a proprietary MOSFET design, the SLG59H1005V achieves a stable 50 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1005V package also exhibits a low thermal resistance for high-current operation. Features • Wide Operating Input Voltage: 4.5 V to 22 V • Maximum Continuous Current: 3 A • Automatic nFET SOA Protection • 5 W SOA Protection Threshold • Back-to-Back FET Reverse Current Blocking, when OFF • Internal nFET Power Limiting • High-performance MOSFET Switch Low RDSON: 50 mΩ at VIN = 22 V Low ΔRDSON/ΔVIN: < 0.05 mΩ/V Low ΔRDSON/ΔT: < 0.06 mΩ/°C • 4-Level, Pin-selectable VIN Overvoltage Lockout • Capacitor-adjustable Inrush Current Control • Two stage Current Limit Protection: Resistor-adjustable Active Current Limit Internal Short-circuit Current limit • Open Drain FAULT Signaling • MOSFET Current Analog Output Monitor: 10 µA/A • Pb-Free / Halogen-Free / RoHS Compliant Packaging ON 1 18 SEL0 2 GND 3 VIN 4 VIN 5 VIN 6 VIN 7 17 SLG59H1005V Designed to operate over a -40°C to 85°C range, the SLG59H1005V is available in a low thermal resistance, RoHS-compliant, 1.6 x 3.0 mm STQFN package. RSET IOUT 8 VIN 16 CAP 15 FAULT 14 SEL1 13 VOUT 12 VOUT 11 VOUT 10 VOUT 9 VOUT 18-pin STQFN 1.6 x 3.0 mm, 0.40mm pitch (Top View) Applications • • • • • Power-Rail Switching Multifunction Printers Large-format Copiers Telecommunications Equipment High-performance Computing 4.5 V and 22 V Point-of-Load Power Distribution • Motor Drives Block Diagram and a 20 V / 3 A Typical Application Circuit CLOAD 22 µF 20 V ±10% 3A VIN VOUT CIN= C1 + C2 + C3 C1 47 µF C2 1 to 22 µF Charge Pump C3 0.1 µF Linear Ramp Control CAP CSLEW 10 nF VLOGIC SEL0 SEL1 ON ON RIOUT 84.5 kΩ 3 V FS - Connect to System ADC CIOUT 180 pF VLOGIC RSET RSET 30.1 kΩ RPU1 10 kΩ IOUT VIN OVLO 24V State Machine (CL/SC Detection and Over Temperature Protection) RPU2 100 kΩ FAULT Connect to System GPI CMOS Input OFF GND Datasheet CFR0011-120-01 Revision 1.04 Page 1 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Pin Description Pin # 1 Pin Name ON Type Pin Description Input A low-to-high transition on this pin initiates the operation of the SLG59H1005V’s state machine. ON is an asserted HIGH, level-sensitive CMOS input with ON_VIL < 0.3 V and ON_VIH > 0.9 V. As the ON pin input circuit does not have an internal pull-down resistor, connect this pin to a general-purpose output (GPO) of a microcontroller, an application processor, or a system controller – do not allow this pin to be open-circuited. 2 SEL0 Input As level-sensitive, CMOS inputs with VIL < 0.3 V and VIH > 1.65 V, the SEL0 (LSB) and the SEL1 (MSB) pins select one of four VIN overvoltage lockout thresholds. Please see the Applications Section for additional information and the Electrical Characteristics table for the VIN overvoltage thresholds. A logic LOW on either pin is achieved by connecting the pin of interest to GND; a logic HIGH on either pin is achieved by connecting a 10 kΩ external resistor from the pin in question to the system’s local logic supply. 3 GND GND Pin 3 is the main ground connection for the SLG59H1005V’s internal charge pump, its gate driver and current-limit circuits as well as its internal state machine. Therefore, use a short, stout connection from Pin 3 to the system’s analog or power plane. 4-8 9-13 14 VIN VIN supplies the power for the operation of the SLG59H1005V, its internal control circuitry, and the drain terminal of the back-to-back, reverse-blocking nFET load switch. With 5 pins fused together MOSFET at VIN, connect a 47 µF (or larger) low-ESR capacitor from this pin to ground. Capacitors used at VIN should be rated at 50 V or higher. VOUT MOSFET Drain terminal of n-channel MOSFET (5 pins fused for VOUT). Connect a 22 µF (or larger) low-ESR capacitor from this pin to ground. Capacitors used at VOUT should be rated at 50 V or higher. SEL1 Please see SEL0 Pin Description above Input FAULT An open drain output, FAULT is asserted within TFAULTLOW when a VIN overvoltage, a current-limit, or an over-temperature condition is detected. FAULT is deasserted within TFAULTHIGH when the Output fault condition is removed. Connect an 100 kΩ external resistor from the FAULT pin to local system logic supply. CAP A low-ESR, stable dielectric, ceramic surface-mount capacitor connected from CAP pin to GND sets the VOUT slew rate and overall turn-on time of the SLG59H1005V. For best performance, the range Output for CSLEW values are 10 nF ≤ CSLEW ≤ 20 nF – please see typical characteristics for additional information. Capacitors used at the CAP pin should be rated at 10 V or higher. Please consult Applications Section on how to select CSLEW based on VOUT slew rate and loading conditions. 17 IOUT IOUT is the SLG59H1005V’s power MOSFET load current monitor output. As an analog current output, this signal when applied to a ground-reference resistor generates a voltage proportional to the current through the n-channel MOSFET. The IOUT transfer characteristic is typically 10 μA/A with Output a voltage compliance range of 0.5 V ≤ VIOUT ≤ 4 V. Optimal IOUT linearity is exhibited for 0.5 A ≤ IDS ≤ 3 A. In addition, it is recommended to bypass the IOUT pin to GND with a 0.18 nF capacitor. 18 RSET 15 16 Input A 1%-tolerance, metal-film resistor between 30 kΩ and 91 kΩ sets the SLG59H1005V’s active current limit. A 91 kΩ resistor sets the SLG59H1005V’s active current limit to 1 A and a 30 kΩ resistor sets the active current limit to 3 A. Ordering Information Part Number Type Production Flow SLG59H1005V STQFN 18L FC Industrial, -40 °C to 85 °C SLG59H1005VTR STQFN 18L FC (Tape and Reel) Industrial, -40 °C to 85 °C Datasheet CFR0011-120-01 Revision 1.04 Page 2 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Absolute Maximum Ratings Parameter Description VIN to GND Load Switch Input Voltage to GND VOUT to GND Conditions Min. Typ. Max. Unit Continuous -0.3 -- 30 V -- -- 32 V -0.3 -- VIN V -0.3 -- 7 V -65 -- 150 °C Maximum pulsed VIN, pulse width < 0.1 s Load Switch Output Voltage to GND ON, SEL[1,0], CAP, ON, SEL[1,0], CAP, RSET, IOUT, RSET, IOUT, and and FAULT Pin Voltages to GND FAULT to GND TS Storage Temperature ESDHBM ESDCDM MSL ESD Protection Human Body Model 2000 -- -- V ESD Protection Charged Device Model 500 -- -- V Moisture Sensitivity Level θJA 1 1.6 x 3.0 mm 18L STQFN; Determined with the device mounted onto a 1 in2, 1 oz. copper pad of FR-4 material Thermal Resistance TJ,MAX Maximum Junction Temperature MOSFET IDSCONT Continuous Current from VIN to VOUT MOSFET IDSPEAK Peak Current from VIN to VOUT -- 40 -- °C/W -- 150 -- °C TJ < 150 °C -- -- 3 A Maximum pulsed switch current, pulse width < 1 ms -- -- 5 A Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Electrical Characteristics 4.5 V ≤ VIN ≤ 22 V; CIN = 47 µF, TA = -40 °C to 85 °C, unless otherwise noted. Typical values are at TA = 25 °C Parameter VIN VIN(OVLO) Description Conditions Operating Input Voltage VIN Overvoltage Lockout Threshold Min. Typ. Max. Unit 4.5 -- 22 V VIN ↑; SEL[1,0] = [0,0] 5.6 6 6.3 V VIN ↑; SEL[1,0] = [0,1] 10.2 10.8 11.4 V VIN ↑; SEL[1,0] = [1,0] 13.5 14.4 15.2 V VIN ↑; SEL[1,0] = [1,1] 22.6 24 25.2 V -- 2 -- % VIN(OVLOHYST) VIN Overvoltage Lockout Hysteresis VIN(UVLO) VIN Undervoltage Lockout Threshold VIN ↓ 3 3.2 3.4 V IQ Quiescent Supply Current ON = HIGH; IDS = 0 A -- 0.5 0.6 mA ISHDN OFF Mode Supply Current ON = LOW; IDS = 0 A -- 1 3 µA TA = 25 °C; IDS = 0.1 A -- 50 52 mΩ TA = 85 °C; IDS = 0.1 A -- 65 68 mΩ RDSON Datasheet CFR0011-120-01 ON Resistance Revision 1.04 Page 3 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Electrical Characteristics (continued) 4.5 V ≤ VIN ≤ 22 V; CIN = 47 µF, TA = -40 °C to 85 °C, unless otherwise noted. Typical values are at TA = 25 °C Parameter Description Conditions Min. Typ. Max. Unit MOSFET IDS Current from VIN to VOUT Continuous -- -- 3 A IREVERSE MOSFET Reverse-Leakage Current VIN = 0 V; VOUT = 22 V; ON = 0 V -- -- 3 µA Active Current Limit, IACL VOUT > 0.5 V; RSET = 30.1 kΩ 3 3.2 3.4 A ILIMIT Short-circuit Current Limit, ISCL VOUT < 0.5 V -- 0.5 -- A TACL Active Current Limit Response Time RSET = 51.6 kΩ -- 120 -- µs IOUT MOSFET Current Analog Monitor Output IDS = 1 A 9.3 10 10.7 µA IDS = 3 A 28.5 30 31.5 µA TIOUT IOUT Response Time to Change in Main MOSFET Current CIOUT = 180 pF; Step load 0 to 2.4 A; 0% to 90% IOUT -- 45 -- µs CLOAD Output Load Capacitance TON_Delay ON Delay Time CLOAD connected from VOUT to GND -- 22 -- µF 50% ON to 10% VOUT ↑; VIN = 4.5 V; CSLEW = 10 nF; RLOAD = 100 Ω, CLOAD = 10 µF -- 0.3 0.5 ms 50% ON to 10% VOUT ↑; VIN = 22 V; CSLEW = 10 nF; RLOAD = 100 Ω, CLOAD = 10µF -- 0.7 1.2 ms Set by External CSLEW 1 ms 50% ON to 90% VOUT ↑ TTotal_ON Total Turn ON Time VOUT(SR) VOUT Slew Rate TOFF_Delay OFF Delay Time 50% ON to 90% VOUT ↑; VIN = 4.5 V; CSLEW = 10 nF; RLOAD = 100 Ω, CLOAD = 10 µF -- 1.5 2.1 ms 50% ON to 90% VOUT ↑; VIN = 22 V; CSLEW = 10 nF; RLOAD = 100 Ω, CLOAD = 10 µF -- 6.5 8 ms 50% ON to 90% VOUT ↑ Set by External CSLEW 1 V/ms 10% to 90% VOUT ↑; VIN = 4.5 V to 22 V; CSLEW = 10 nF; RLOAD = 100 Ω, CLOAD = 10 µF 2.7 3.2 3.9 V/ms -- 15 -- µs 10.4 12.7 14.3 µs 50% ON to VOUT Fall Start ↓; VIN = 4.5 V to 22 V RLOAD = 100 Ω, No CLOAD 90% VOUT to 10% VOUT ↓; TFALL VOUT Fall Time ON = HIGH-to-LOW; VIN = 4.5 V to 22 V; RLOAD = 100 Ω, No CLOAD TFAULTLOW FAULT Assertion Time Abnormal Step Load Current event to FAULT↓; IACL = 1 A; VIN = 22 V; RSET = 91 kΩ; switch in 20 Ω load -- 80 -- µs TFAULTHIGH FAULT De-assertion Time Delay to FAULT↑ after fault condition is removed; IACL = 1 A; VIN = 22 V; RSET = 91 kΩ; switch out 20 Ω load -- 180 -- µs IFAULT = 1 mA -- 0.2 -- V FAULTVOL FAULT Output Low Voltage ON_VIH ON Pin Input High Voltage 0.9 -- 5 V ON_VIL ON Pin Input Low Voltage -0.3 0 0.3 V SEL[1,0]_VIH SEL[1,0] pins Input High Voltage 1.65 -- 4.5 V SEL[1,0]_VIL SEL[1,0] pins Input Low Voltage -0.3 -- 0.3 V Datasheet CFR0011-120-01 Revision 1.04 Page 4 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Electrical Characteristics (continued) 4.5 V ≤ VIN ≤ 22 V; CIN = 47 µF, TA = -40 °C to 85 °C, unless otherwise noted. Typical values are at TA = 25 °C Parameter Description Conditions ION(Leakage) ON Pin Leakage Current 1 V ≤ ON ≤ 5 V or ON = GND Min. Typ. Max. Unit -- -- 1 µA THERMON Thermal Protection Shutdown Threshold -- 125 -- °C THERMOFF Thermal Protection Restart Threshold -- 100 -- °C Notes: 1. Refer to typical Timing Parameter vs. CSLEW performance charts for additional information when available. TTotal_ON, TON_Delay and Slew Rate Measurement ON* 50% ON 50% ON TOFF_Delay 90% VOUT VOUT 90% VOUT TON_Delay 10% VOUT 10% VOUT VOUT(SR) (V/ms) TFALL TTotal_ON *Rise and Fall Times of the ON Signal are 100 ns Datasheet CFR0011-120-01 Revision 1.04 Page 5 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Typical Performance Characteristics RDSON vs. Temperature and VIN IACL vs. Temperature and RSET Datasheet CFR0011-120-01 Revision 1.04 Page 6 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output IACL vs. RSET and VIN IOUT vs. MOSFET IDS and VIN Datasheet CFR0011-120-01 Revision 1.04 Page 7 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output IOUT vs. Temperature and MOSFET IDS VOUT Slew Rate vs. Temperature, VIN, and CSLEW Datasheet CFR0011-120-01 Revision 1.04 Page 8 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output TTotal_ON vs. CSLEW, VIN, and Temperature Datasheet CFR0011-120-01 Revision 1.04 Page 9 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Timing Diagram - Basic Operation including Active Current Limit Protection HIGH VIN LOW Time ON TRISE HIGH VOUT 90% TON_Delay 10% IACL Abnormal Step Load Current Event IACL Active Current Limit Operation IDS ISCL ISCL FAULT TFAULTLOW TFAULTHIGH Nominal Steady State Operation Resumes ACL Threshold Triggered Datasheet CFR0011-120-01 Revision 1.04 Page 10 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Timing Diagram - Active Current Limit & Thermal Protection Operation HIGH VIN LOW Time Nominal Steady State Operation Resumes ON TTotal_ON Active Current Limit Operation TRISE VOUT Thermal Protection Operation 90% TON_Delay 10% Abnormal Step Load Current Event IACL IACL IDS ISCL ISCL FAULT TFAULTLOW TFAULTHIGH Die temp > THERMON Datasheet CFR0011-120-01 Revision 1.04 Page 11 of 36 Die temp < THERMOFF 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Timing Diagram - Basic Operation including Active Current + Internal FET SOA Protection HIGH VIN LOW Time ON ACL Threshold Triggered TRISE HIGH VOUT Decreasing RLOAD drops VOUT 90% TON_Delay SOA Threshold 10% IACL Abnormal Step Load Current Event Active Current Limit Operation IACL SOA Protection IDS ISCL ISCL 0.2s FAULT TFAULTLOW ACL Threshold Triggered TFAULTHIGH Nominal Steady State Operation resumes once overload condition is removed FET SOA Threshold Triggered and FET is turned off Datasheet CFR0011-120-01 Revision 1.04 Page 12 of 36 Automatic restart after 0.2s “cool off” delay and normal operation resumes if overload condition is removed 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output SLG59H1005V Application Diagram Figure 1. Test setup Application Diagram Typical Turn-on Waveforms Figure 2. Typical Turn ON operation waveform for VIN = 4.5 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 13 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 3. Typical Turn ON operation waveform for VIN = 4.5 V, CSLEW = 18 nF, CLOAD = 10 μF, RLOAD = 100 Ω Figure 4. Typical Turn ON operation waveform for VIN = 9 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 14 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 5. Typical Turn ON operation waveform for VIN = 9 V, CSLEW = 18 nF, CLOAD = 10 μF, RLOAD = 100 Ω Figure 6. Typical Turn ON operation waveform for VIN = 12 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 15 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 7. Typical Turn ON operation waveform for VIN = 12 V, CSLEW = 18 nF, CLOAD = 10 μF, RLOAD = 100 Ω Figure 8. Typical Turn ON operation waveform for VIN = 20 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 16 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 9. Typical Turn ON operation waveform for VIN = 20 V, CSLEW = 18 nF, CLOAD = 10 μF, RLOAD = 100 Ω Typical Turn-off Waveforms Figure 10. Typical Turn OFF operation waveform for VIN = 4.5 V, CSLEW = 10 nF, no CLOAD , RLOAD = 100 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 17 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 11. Typical Turn OFF operation waveform for VIN = 4.5 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω Figure 12. Typical Turn OFF operation waveform for VIN = 9 V, CSLEW = 10 nF, no CLOAD , RLOAD = 100 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 18 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 13. Typical Turn OFF operation waveform for VIN = 9 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω Figure 14. Typical Turn OFF operation waveform for VIN = 12 V, CSLEW = 10 nF, no CLOAD , RLOAD = 100 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 19 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 15. Typical Turn OFF operation waveform for VIN = 12 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω Figure 16. Typical Turn OFF operation waveform for VIN = 20 V, CSLEW = 10 nF, no CLOAD , RLOAD = 100 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 20 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 17. Typical Turn OFF operation waveform for VIN = 20 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω Typical ACL Operation Waveforms Figure 18. Typical ACL operation waveform for VIN = 4.5 V, CLOAD = 10 μF, IACL = 1 A, RSET = 91 kΩ Datasheet CFR0011-120-01 Revision 1.04 Page 21 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 19. Typical ACL operation waveform for VIN = 9 V, CLOAD = 10 μF, IACL = 1 A, RSET = 91 kΩ Figure 20. Typical ACL operation waveform for VIN = 12 V, CLOAD = 10 μF, IACL = 1 A, RSET = 91 kΩ Datasheet CFR0011-120-01 Revision 1.04 Page 22 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 21. Thermally induced SOA shutdown for VIN = 20 V, CLOAD = 10 μF, IACL = 1 A, RSET = 91 kΩ Typical SOA Waveforms Figure 22. Typical SOA waveform during powerup on heavy load for VIN = 9 V, CLOAD = 10 μF, RSET = 30.1 kΩ, RLOAD = 3.8 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 23 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 23. Extended typical SOA waveform during powerup on heavy load for VIN = 9 V, CLOAD = 10 μF, RSET = 30.1 kΩ, RLOAD = 3.8 Ω Figure 24. Typical SOA waveform during powerup on heavy load for VIN = 12 V, CLOAD = 10 μF, RSET = 30.1 kΩ, RLOAD = 3.8 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 24 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 25. Extended typical SOA waveform during powerup on heavy load for VIN = 12 V, CLOAD = 10 μF, RSET = 30.1 kΩ, RLOAD = 5 Ω Figure 26. Typical SOA waveform during powerup on heavy load for VIN = 20 V, CLOAD = 10 μF, RSET = 30.1 kΩ, RLOAD = 8 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 25 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Figure 27. Extended typical SOA waveform during powerup on heavy load for VIN = 20 V, CLOAD = 10 μF, RSET = 30.1 kΩ, RLOAD = 8 Ω Datasheet CFR0011-120-01 Revision 1.04 Page 26 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Applications Information High Voltage GreenFET Safe Operating Area Explained Renesas’s High Voltage GreenFET load switches incorporate a number of internal protection features that prevents them from damaging themselves or any other circuit or subcircuit downstream of them. One particular protection feature is their Safe Operation Area (SOA) protection. SOA protection is automatically activated under overpower and, in some cases, under overcurrent conditions. Overpower SOA is activated if package power dissipation exceeds an internal 5 W threshold longer than 2.5 ms. High Voltage GreenFET devices will quickly switch off (open circuit) upon overpower detection and automatically resume (close) nominal operation once overpower condition no longer exists. One possible way to have an overpower condition trigger SOA protection is when High Voltage GreenFET products are enabled into heavy output resistive loads and/or into large load capacitors. It is under these conditions to follow carefully the “Safe Start-up Loading” guidance in the Applications section of the datasheet. During an overcurrent condition, High Voltage GreenFET devices will try to limit the output current to the level set by the external RSET resistor. Limiting the output current, however, causes an increased voltage drop across the FET’s channel because the FET’s RDSON increased as well. Since the FET’s RDSON is larger, package power dissipation also increases. If the resultant increase in package power dissipation is higher/equal than 5 W for longer than 2.5 ms, internal SOA protection will be triggered and the FET will open circuit (switch off). Every time SOA protection is triggered, all High Voltage GreenFET devices will automatically attempt to resume nominal operation after 160 ms. Safe Start-up Condition SLG59H1005V has built-in protection to prevent over-heating during start-up into a heavy load. Overloading the VOUT pin with a capacitor and a resistor may result in non-monotonic VOUT ramping. In general, under light loading on VOUT, VOUT ramping can be controlled with CSLEW value. The following equation serves as a guide: CSLEW = TRISE 20 x 4.9 µA x VIN 3 where TRISE = Total rise time from 10% VOUT to 90% VOUT VIN = Input Voltage CSLEW = Capacitor value for CAP pin When capacitor and resistor loading on VOUT during start up, the following tables will ensure VOUT ramping is monotonic without triggering internal protection: Safe Start-up Loading for VIN = 12 V (Monotonic Ramp) Slew Rate (V/ms) CSLEW (nF)2 CLOAD (µF) RLOAD (Ω) 1 33.3 500 20 2 16.7 250 20 3 11.1 160 20 4 8.3 120 20 5 6.7 100 20 Datasheet CFR0011-120-01 Revision 1.04 Page 27 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Safe Start-up Loading for VIN = 22 V (Monotonic Ramp) Slew Rate (V/ms) CSLEW (nF)2 CLOAD (µF) RLOAD (Ω) 0.5 66.7 500 80 1.0 33.3 250 80 1.5 22.2 160 80 2.0 16.7 120 80 2.5 13.3 100 80 Note 2: Select the closest-value tolerance capacitor. Setting the SLG59H1005V’s Active Current Limit RSET (kΩ) Active Current Limit (A)3 91 1 45 2 30 3 Note 3: Active Current Limit accuracy is ±15% over voltage range and over temperature range. Setting the SLG59H1005V’s Input Overvoltage Lockout Threshold As shown in the table below, SEL[1,0] selects the VIN overvoltage threshold at which the SLG59H1005V’s internal state machine will turn OFF (open circuit) the power MOSFET if VIN exceeds the selected threshold. SEL1 SEL0 VIN(OVLO) (Typ) 0 0 6V 0 1 10.8 V 1 0 14.4 V 1 1 24 V For example, SEL[1,1] would be the most appropriate setting for applications where the steady-state VIN can extend up to 20 V without causing any damage to the SLG59H1005V since the IC is 29-V tolerant. With an activated SLG59H1005V (ON=HIGH) and at any time VIN crosses the programmed VIN overvoltage threshold, the state machine opens the load switch and asserts the FAULT pin within TFAULTLOW. In applications with a deactivated or inactive SLG59H1005V (VIN > VIN(UVLO) and ON=LOW) and if the applied VIN is higher than the programmed VIN(OVLO) threshold, the SLG59H1005V’s state machine will keep the load switch open circuited if the ON pin is toggled LOW-to-HIGH. In these cases, the FAULT pin will also be asserted within TFAULTLOW and will remain asserted until VIN resumes nominal, steady-state operation. In all cases, the SLG59H1005V’s VIN undervoltage lockout threshold is fixed at VIN(UVLO). Datasheet CFR0011-120-01 Revision 1.04 Page 28 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Power Dissipation The junction temperature of the SLG59H1005V depends on different factors such as board layout, ambient temperature, and other environmental factors. The primary contributor to the increase in the junction temperature of the SLG59H1005V is the power dissipation of its power MOSFET. Its power dissipation and the junction temperature in nominal operating mode can be calculated using the following equations: PD = RDSON x IDS2 where: PD = Power dissipation, in Watts (W) RDSON = Power MOSFET ON resistance, in Ohms (Ω) IDS = Output current, in Amps (A) and TJ = PD x θJA + TA where: TJ = Junction temperature, in Celsius degrees (°C) θJA = Package thermal resistance, in Celsius degrees per Watt (°C/W) TA = Ambient temperature, in Celsius degrees (°C) In current-limit mode, the SLG59H1005V’s power dissipation can be calculated by taking into account the voltage drop across the load switch (VIN-VOUT) and the magnitude of the output current in current-limit mode (IACL): PD = (VIN-VOUT) x IACL or PD = (VIN – (RLOAD x IACL)) x IACL where: PD = Power dissipation, in Watts (W) VIN = Input Voltage, in Volts (V) RLOAD = Load Resistance, in Ohms (Ω) IACL = Output limited current, in Amps (A) VOUT = RLOAD x IACL Datasheet CFR0011-120-01 Revision 1.04 Page 29 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Layout Guidelines: 1. Since the VIN and VOUT pins dissipate most of the heat generated during high-load current operation, it is highly recommended to make power traces as short, direct, and wide as possible. A good practice is to make power traces with absolute minimum widths of 15 mils (0.381 mm) per Ampere. A representative layout, shown in Figure 28, illustrates proper techniques for heat to transfer as efficiently as possible out of the device; 2. To minimize the effects of parasitic trace inductance on normal operation, it is recommended to connect input CIN and output CLOAD low-ESR capacitors as close as possible to the SLG59H1005V's VIN and VOUT pins; 3. The GND pin should be connected to system analog or power ground plane. 4. 2 oz. copper is recommended for high current operation. SLG59H1005V Evaluation Board: А High Voltage GreenFET Evaluation Board for SLG59H1005V is designed according to the statements above and is illustrated on Figure 28. Please note that evaluation board has D_Sense and S_Sense pads. They cannot carry high currents and dedicated only for RDSON evaluation. Figure 28. SLG59H1005V Evaluation Board Datasheet CFR0011-120-01 Revision 1.04 Page 30 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V GND 1 1 IOUT/POUT 1 R5 10k R3 30.1k C4 10nF R4 N.P. R2 100k R1 84.5k PDS/CAP FAULT# 1 GND 1 GND 1 1 2 3 SEL1 1 2 3 ON R6 5V1 SEL0 1 2 3 A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output C3 180pF U1 D_SENSE CAP Array DRAIN 1 3 5 7 9 2 4 6 8 10 1 C2 2 2u F 1 C5 2 2u F ON SEL0 GND VIN VIN VIN VIN VIN 18 17 16 15 14 13 12 11 10 9 1 1 C1 4 7 uF 1 2 3 4 5 6 7 8 RSET IOUT CAP FAULT SEL1 VOUT VOUT VOUT VOUT VOUT SOURCES_SENSE 1 2 3 4 1 2 3 4 GND D/VIN GND 1 2 3 4 1 2 3 4 RSET Array S/VOUT 1 3 5 7 9 2 4 6 8 10 Figure 29. SLG59H1005V Evaluation Board Connection Circuit Basic Test Setup and Connections Figure 30. SLG59H1005V Evaluation Board Connection Circuit EVB Configuration 1. Based on VIN voltage, set SEL0, SEL1 to GND or 5 V to configure OVLO; 2. Connect oscilloscope probes to D/VIN, S/VOUT, ON, etc.; 3. Turn on Power Supply and set desired VIN from 4.5 V…22 V range; 4 .Toggle the ON signal High or Low to observe SLG59H1005V operation. Datasheet CFR0011-120-01 Revision 1.04 Page 31 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Package Top Marking System Definition Pin 1 Identifier 1005V WWNNN ARR Part Code Date Code + LOT Code Assembly + Rev. Code 1005V - Part ID Field WW - Date Code Field1 NNN - Lot Traceability Code Field1 A - Assembly Site Code Field 2 RR - Part Revision Code Field2 Note 1: Each character in code field can be alphanumeric A-Z and 0-9 Note 2: Character in code field can be alphabetic A-Z Datasheet CFR0011-120-01 Revision 1.04 Page 32 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Package Drawing and Dimensions 18 Lead TQFN Package 1.6 x 3 mm (Fused Lead) JEDEC MO-220, Variation WCEE Datasheet CFR0011-120-01 Revision 1.04 Page 33 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output SLG59H1005V 18-pin STQFN PCB Landing Pattern Note: All dimensions shown in micrometers (µm) Datasheet CFR0011-120-01 Revision 1.04 Page 34 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Tape and Reel Specifications Max Units Leader (min) Nominal Reel & Package # of Package Size Hub Size Length Type Pins per Reel per Box Pockets [mm] [mm] [mm] STQFN 18L 1.6x3mm 0.4P FC Green 18 1.6 x 3 x 0.55 3,000 3,000 178 / 60 100 400 Trailer (min) Pockets Length [mm] Tape Width [mm] 100 400 8 Part Pitch [mm] 4 Carrier Tape Drawing and Dimensions Package Type Pocket BTM Pocket BTM Length Width STQFN 18L 1.6x3mm 0.4P FC Green Pocket Depth Index Hole Pitch Pocket Pitch Index Hole Diameter Index Hole Index Hole to Tape to Pocket Tape Width Edge Center A0 B0 K0 P0 P1 D0 E F W 1.78 3.18 0.76 4 4 1.5 1.75 3.5 8 Refer to EIA-481 specification Recommended Reflow Soldering Profile Please see IPC/JEDEC J-STD-020: latest revision for reflow profile based on package volume of 2.64 mm3 (nominal). More information can be found at www.jedec.org. Datasheet CFR0011-120-01 Revision 1.04 Page 35 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59H1005V A 22 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output Revision History Date Version 2/2/2022 1.04 Updated Company name and logo Added SOA Protection Threshold to Features Fixed typos 12/21/2018 1.03 Updated style and formatting Updated Charts Added Scope shots Added Layout Guidelines Fixed typos 4/19/2017 1.02 Updated Block Diagram Updated Charts Updated SOA operation Timing Diagrams 3/21/2017 1.01 Updated Features 2/24/2017 1.00 Production Release Datasheet CFR0011-120-01 Change Revision 1.04 Page 36 of 36 2-Feb-2022 ©2022 Renesas Electronics Corporation IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. 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