2N2369A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC * 2N4449 JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage 2N2369A / U / UA 2N4449 / UB / UBC VCEO 15 20 Vdc Emitter-Base Voltage 2N2369A / U / UA 2N4449 / UB / UBC VEBO 4.5 6.0 Vdc Collector-Base Voltage VCBO 40 Vdc Collector-Emitter Voltage ICES 40 Vdc PT 0.36 (1) 0.36 (1, 5) 0.50 (4) W Top, Tstg -65 to +200 °C Symbol Value Unit RθJA 400 400 (5) 350 °C/W Total Power Dissipation @ TA = +25°C 2N2369A; 2N4449 UA, UB, UBC U TO-18 (TO-206AA) 2N2369A TO-46 (TO-206AB) Operating & Storage Junction Temperature Range 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 UA, UB, UBC U Note: 1. 2. 3. 4. 5. Derate linearly 2.06 mW°/C above TA = +25°C. Derate linearly 4.76 mW°/C above TC = +95°C. Derate linearly 3.08 mW°/C above TC = +70°C. Derate linearly 3.44 mW°/C above TA = +54.5°C. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads. SURFACE MOUNT UB & UBC ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCE = 20Vdc T4-LDS-0057 Rev. 2 (081394) Symbol Min. V(BR)CEO 15 ICES Max. SURFACE MOUNT UA (UBC = Ceramic Lid Version) Unit Vdc 0.4 μAdc SURFACE MOUNT U (Dual Transistor) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Emitter-Base Breakdown Voltage VEB = 4.5Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc Collector- Base Breakdown Voltage VCB = 40Vdc Collector-Base Cutoff Current VCB = 32Vdc ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 10mAdc, VCE = 0.35Vdc IC = 30mAdc, VCE = 0.4Vdc IC = 10mAdc, VCE = 1.0Vdc IC = 100mAdc, VCE = 1.0Vdc Symbol Min. IEBO Max. Unit 10 μAdc 0.25 10 ICBO μAdc 0.2 hFE Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 30mAdc, IB = 3.0mAdc IC = 100mAdc, IB = 10mAdc VCE(sat) Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 30mAdc, IB = 3.0mAdc IC = 100mAdc, IB = 10mAdc VBE(sat) 40 30 40 20 120 120 120 120 0.20 0.25 0.45 Vdc Vdc 0.80 0.85 0.90 1.20 Symbol Min. Max. Unit |hfe| 5.0 10 0.70 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 100MHz Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 4.0 pF Cibo 5.0 pF Max. Unit ton 12 ηs toff 18 ηs tS 13 ηs SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc Turn-Off Time IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc Charge Storage Time IC = 10mAdc; IB1 = 10mAdc, IB2 = 10mAdc Symbol Min. (1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. T4-LDS-0057 Rev. 2 (081394) Page 2 of 2