APT10086BVFRG

APT10086BVFR 1000V POWER MOS V ® 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package TO-247 D G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT10086BVFR UNIT 1000 Volts Drain-Source Voltage 13 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 370 Watts Linear Derating Factor 2.96 W/°C VGSM PD TJ,TSTG 52 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 13 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX UNIT 1000 Volts 13 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.86 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 1-2005 BVDSS Characteristic / Test Conditions 050-5595 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT10086BVFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 3700 4440 Coss Output Capacitance VDS = 25V 350 490 Crss Reverse Transfer Capacitance f = 1 MHz 180 270 VGS = 10V 185 275 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 16 90 24 135 VGS = 15V 12 24 VDD = 0.5 VDSS 10 20 ID = ID [Cont.] @ 25°C 43 65 RG = 1.6Ω 10 20 TYP MAX Qg Total Gate Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN 13 Continuous Source Current (Body Diode) IS 1 ISM Pulsed Source Current VSD Diode Forward Voltage dv/ Peak Diode Recovery dv/dt dt 52 (Body Diode) 2 UNIT Amps (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 5 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 200 Tj = 125°C 350 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 0.7 Tj = 125°C 1.8 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 11 Tj = 125°C 17 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% TYP MAX 0.34 40 VR = 200V. D=0.5 0.2 0.1 0.05 0.01 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5595 Rev B 1-2005 0.4 0.05 0.01 0.005 0.001 10-5 t1 t2 SINGLE PULSE 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 15.38mH, R = 25Ω, Peak I = 13A j G L 5 I - -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0Ω, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT10086BVFR 25 VGS=5.5V, 6V, 7V, 10V & 15V 20 5V 15 10 4.5V 5 ID, DRAIN CURRENT (AMPERES) VGS=15V 20 VGS=7V & 10V VGS=5.5V & 6V 15 10 4.5V 5 4V 4V 0 0 24 18 12 TJ = +125°C 6 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 14 12 10 8 6 4 2 0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.2 1.1 VGS=10V VGS=20V 1.0 0.9 0 5 10 15 20 25 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 1.3 1.1 1.0 0.9 0.8 1-2005 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @