APT4014BVFRG

APT4014BVFR APT4014SVFR 400V POWER MOS V 0.140Ω 28A BVFR ® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • Avalanche Energy Rated • Lower Leakage • TO-247 or Surface Mount D3Pak SVFR D G • Fast Recovery Body Diode S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT4014BVFR_SVFR UNIT 400 Volts Drain-Source Voltage 28 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 300 Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG 112 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 28 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 400 Volts 28 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) MAX 0.14 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Ohms µA ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) TYP 10-2004 BVDSS Characteristic / Test Conditions 050-7272 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT4014BVFR_SVFR Test Conditions Characteristic MIN TYP Ciss Input Capacitance VGS = 0V 3600 Coss Output Capacitance VDS = 25V 560 Crss Reverse Transfer Capacitance f = 1 MHz 230 VGS = 10V 160 VDD = 200V ID = 28A @ 25°C 20 70 Turn-on Delay Time VGS = 15V 12 Rise Time VDD = 200V 10 ID = 28A @ 25°C 47 RG = 1.6Ω 8 3 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) tr t d(off) Turn-off Delay Time tf Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP Continuous Source Current (Body Diode) IS 1 Pulsed Source Current VSD Diode Forward Voltage dv/ Peak Diode Recovery dv/dt dt 28 (Body Diode) ISM 2 MAX 112 (VGS = 0V, IS = -28A) 5 UNIT Amps 1.3 Volts 15 V/ns t rr Reverse Recovery Time (IS = -28A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 500 Q rr Reverse Recovery Charge (IS = -28A, di/dt = 100A/µs) Tj = 25°C 1.3 Tj = 125°C 4.5 IRRM Peak Recovery Current (IS = -28A, di/dt = 100A/µs) Tj = 25°C 12 Tj = 125°C 18 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.42 RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 40 D=0.5 0.05 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7272 Rev A 10-2004 0.5 0.2 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 3.32mH, R = 25Ω, Peak I = 28A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves APT4014BVFR_SVFR VGS=6V, 7V, 10V & 15V 50 5.5V 40 5V 30 VGS=15V 20 4.5V 10 4V ID, DRAIN CURRENT (AMPERES) 40 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @