APT100GF60JU2

APT100GF60JU2 ISOTOP® Boost chopper NPT IGBT K C VCES = 600V IC = 100A @ Tc = 80°C Application  AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch Features  Non Punch Through (NPT) THUNDERBOLT IGBT    - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration G E K E C G Benefits  Outstanding performance at high frequency operation  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  RoHS Compliant ISOTOP Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage TC = 25°C Max ratings 600 120 100 320 ±20 416 TC = 80°C 30 TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation IFAV Maximum Average Forward Current Duty cycle=0.5 IFRMS RMS Forward Current (Square wave, 50% duty) 39 Unit V A V W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1- APT100GF60JU2 – Rev 2 October, 2012 Symbol VCES IC1 IC2 ICM VGE PD APT100GF60JU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 100µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE, IC = 1mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ Max 600 2.0 2.2 3 100 1000 2.5 Unit V µA V 5 ±150 V nA Max Unit Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Switching Energy Turn off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGS = 15V VBus = 300V IC = 100A Resistive Switching (25°C) VGE = 15V VBus = 400V IC = 100A RG = 5 Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 100A RG = 5 www.microsemi.com Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5 pF nC ns mJ ns mJ 2- APT100GF60JU2 – Rev 2 October, 2012 Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr APT100GF60JU2 Chopper diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Min Typ 1.6 1.9 1.4 Max 1.8 V 250 500 44 Tj = 125°C Unit µA pF ns A nC ns nC A Thermal and package characteristics RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Min Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com 2500 -55 Max 0.3 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 3- APT100GF60JU2 – Rev 2 October, 2012 Symbol Characteristic APT100GF60JU2 Typical IGBT Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 Tc=-55°C 250µs Pulse Test < 0.5% Duty cycle 300 250 Ic, Collector Current (A) Tc=25°C 200 150 Tc=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 Tc=25°C 150 100 Tc=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 Transfer Characteristics VGE, Gate to Emitter Voltage (V) 200 150 100 TJ=25°C 50 TJ=125°C TJ=-55°C 0 VCE, Collector to Emitter Voltage (V) 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=200A 5 4 3 Ic=100A 2 Ic=50A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) IC = 100A TJ = 25°C 16 14 4 VCE=120V VCE=300V 12 10 VCE=480V 8 6 4 2 0 10 0 VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 250 3 Gate Charge 18 250µs Pulse Test < 0.5% Duty cycle 2 VCE, Collector to Emitter Voltage (V) 300 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=200A 3 2.5 Ic=100A 2 1.5 Ic=50A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 -50 16 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 160 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) Tc=-55°C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 140 120 100 80 60 40 20 125 TJ, Junction Temperature (°C) 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4- APT100GF60JU2 – Rev 2 October, 2012 Ic, Collector Current (A) 350 APT100GF60JU2 Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 ICE, Collector to Emitter Current (A) 250 200 VGE=15V, TJ=125°C 150 100 50 150 25 Current Rise Time vs Collector Current VGE=15V, TJ=125°C 150 TJ = 125°C 40 20 TJ = 25°C 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Turn-On Energy Loss vs Collector Current 6 Eoff, Turn-off Energy Loss (mJ) 8 Eon, Turn-On Energy Loss (mJ) 125 60 0 VCE = 400V RG = 5Ω 6 TJ=125°C, VGE=15V 4 TJ=25°C, VGE=15V 2 0 0 25 50 75 100 125 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 5Ω 5 4 TJ = 125°C TJ = 25°C 3 2 1 0 150 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) 150 Switching Energy Losses vs Junction Temp. Switching Energy Losses vs Gate Resistance 10 VCE = 400V VGE = 15V TJ= 125°C 12 Eon, 200A Switching Energy Losses (mJ) Switching Energy Losses (mJ) 100 VCE = 400V, VGE = 15V, RG = 5Ω tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V RG = 5Ω 20 16 75 Current Fall Time vs Collector Current 80 40 50 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25°C VCE = 400V RG = 5Ω Eoff, 200A Eoff, 100A 8 Eon, 100A Eoff, 50A 4 Eon, 50A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 www.microsemi.com VCE = 400V VGE = 15V RG = 5Ω 8 Eon, 200A Eoff, 200A 6 Eon, 100A 4 Eoff, 100A 2 Eoff, 50A Eon, 50A 0 0 25 50 75 100 TJ, Junction Temperature (°C) 125 5- APT100GF60JU2 – Rev 2 October, 2012 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APT100GF60JU2 Capacitance vs Collector to Emitter Voltage Minimum Switching Safe Operating Area 10000 350 IC, Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 300 250 200 150 100 50 100 0 0 10 20 30 40 50 0 VCE, Collector to Emitter Voltage (V) 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.1 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 120 1 10 Operating Frequency vs Collector Current VCE = 400V D = 50% RG = 5Ω TJ = 125°C 100 80 60 40 20 0 20 www.microsemi.com 40 60 80 100 IC, Collector Current (A) 120 6- APT100GF60JU2 – Rev 2 October, 2012 0.15 Fmax, Operating Frequency (kHz) Thermal Impedance (°C/W) 0.35 APT100GF60JU2 www.microsemi.com 7- APT100GF60JU2 – Rev 2 October, 2012 Typical Diode Performance Curve www.microsemi.com 8- APT100GF60JU2 – Rev 2 October, 2012 APT100GF60JU2 APT100GF60JU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 9- APT100GF60JU2 – Rev 2 October, 2012 Dimensions in Millimeters and (Inches) APT100GF60JU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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