APT11N80BC3G

APT11N80BC3 800V 11A 0.45Ω Super Junction MOSFET • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter APT11N80BC3 UNIT 800 Volts Drain-Source Voltage 11 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 Gate-Source Voltage Transient ±30 Total Power Dissipation @ TC = 25°C 156 Watts Linear Derating Factor 1.25 W/°C VGSM PD TJ,TSTG TL dv /dt 33 Operating and Storage Junction Temperature Range 7 EAR Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy °C 260 Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C) Repetitive Avalanche Current EAS -55 to 150 Lead Temperature: 0.063" from Case for 10 Sec. IAR Volts 50 V/ns 11 Amps 0.2 4 mJ 470 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 800 RDS(on) Drain-Source On-State Resistance (VGS = 10V, ID = 7.1A) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) MAX UNIT Volts 0.39 0.45 0.5 20 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C) Ohms μA 200 ±100 nA 3.9 Volts 3-2012 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 050-7136 Rev C IDSS 2 TYP IGSS VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 680μA) 2.1 3 DYNAMIC CHARACTERISTICS Symbol APT11N80BC3 Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 770 Crss Reverse Transfer Capacitance f = 1 MHz 18 Qg Total Gate Charge 3 VGS = 10V 60 Qgs Gate-Source Charge VDD = 400V 8 Qgd Gate-Drain ("Miller ") Charge td(on) ID = 11A @ 25°C td(off) tf 15 VDD = 400V ID = 11A @ 25°C RG = 7.5Ω Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 70 80 7 10 ns 165 VDD = 533V, VGS = 15V 6 nC 25 VGS = 10V Turn-off Delay Time pF 30 RESISTIVE SWITCHING Rise Time UNIT 1585 VGS = 0V Turn-on Delay Time tr MAX ID = 11A, RG = 5Ω 50 INDUCTIVE SWITCHING @ 125°C 305 VDD = 533V VGS = 15V μJ 65 ID = 11A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN TYP Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = - 11A) 11 33 1 t rr Reverse Recovery Time (IS = 11A, dl S/dt = -100A/μs, VR = 640V) Q rr Reverse Recovery Charge (IS = 11A, dl S/dt = -100A/μs, VR = 640V) dv Peak Diode Recovery dv/dt /dt MAX 1.2 Amps Volts ns 550 μC 10 5 UNIT 6 V/ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.80 62 1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 Z JC, THERMAL IMPEDANCE (°C/W) θ 3-2012 050-7136 Rev C 0.80 0.9 0.60 0.7 0.50 0.5 0.40 0.30 0.3 0.20 0.1 0.10 0 SINGLE PULSE 0.05 10 -5 10 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION -4 °C/W 4 Starting Tj = +25°C, L = 194mH, RG = 25Ω, Peak IL = 2.2A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID 11A di/dt ≤700A/μs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f APT Reserves the right to change, without notice, the specifications and information contained herein. 0.90 0.70 UNIT Typical Performance APT11N80BC3 RC MODEL Junction temp. (°C) 0.345 0.00375 0.455 0.101 Power (watts) Case temperature ID, DRAIN CURRENT (AMPERES) 30 VGS =15 & 10V 25 20 6V 15 10 5V 5 4V 0 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @