APT150GN60J

APT150GN60J 600V TYPICAL PERFORMANCE CURVES APT150GN60J ® E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. C G ISOTOP ® 22 OT 7 S "UL Recognized" file # E145592 • 600V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT150GN60J VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 220 I C2 Continuous Collector Current @ TC = 110°C 123 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 450 Switching Safe Operating Area @ TJ = 175°C 450A @ 600V Total Power Dissipation 536 Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) (VCE = VGE, I C = 2400µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 25 2 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.65 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 11-2005 MIN Rev A Characteristic / Test Conditions 050-7624 Symbol APT150GN60J DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge td(on) tr td(off) tf Turn-on Switching Energy (Diode) nC A ns 60 8810 TJ = +25°C µJ 8615 4295 Inductive Switching (125°C) 44 VCC = 400V 110 Current Rise Time VGE = 15V Turn-off Delay Time 95 RG = 1.0Ω 7 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) 55 ns 480 I C = 150A Current Fall Time Turn-off Switching Energy V 430 6 Eon1 Eoff pF 450 110 5 UNIT 510 44 4 MAX 65 RG = 1.0Ω 7 Eon2 tf 970 I C = 150A Turn-on Switching Energy td(off) 9.5 VGE = 15V VGE = 15V Eon1 tr Gate Charge VCC = 400V Current Fall Time Turn-on Delay Time 300 Inductive Switching (25°C) Turn-off Delay Time td(on) 350 f = 1 MHz 15V, L = 100µH,VCE = 600V Current Rise Time Turn-off Switching Energy VGE = 0V, VCE = 25V TJ = 175°C, R G = 4.3Ω 7, VGE = Turn-on Delay Time Eoff 9200 I C = 150A Switching Safe Operating Area TYP Capacitance VCE = 300V Qge SSOA MIN 8880 TJ = +125°C µJ 9735 66 5460 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) 0.28 RθJC Junction to Case (DIODE) N/A VIsolation WT Torque RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque 2500 UNIT °C/W Volts 1.03 oz 29.2 gm 10 Ib•in 1.1 N•m 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 050-7624 Rev A 11-2005 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V TJ = -55°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C 250 TJ = 125°C 200 TJ = 175°C 150 100 50 0 TJ = -55°C TJ = 25°C TJ = 125°C TJ = 175°C 250 200 150 100 50 0 0 250 10V 200 150 9V 100 8V 50 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 300 11V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST