APT150GN60LDQ4G

600V APT150GN60LDQ4(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. • 600V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Intergrated Gate Resistor: Low EMI, High Reliability APT150GN60LDQ4(G) Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter APT150GN60LDQ4(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts 220 123 2 Amps 450 Switching Safe Operating Area @ TJ = 175°C 450A @ 600V Total Power Dissipation 536 Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) (VCE = VGE, I C = 2400μA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 75 3 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor μA 2000 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.65 3 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 10-2008 MIN Rev A Characteristic / Test Conditions 050-7633 Symbol APT150GN60LDQ4(G) Typical Performance Curves Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA td(on) tr td(off) tf Total Gate Charge 4 Gate-Emitter Charge 300 Gate Charge 9.5 VGE = 15V 970 VCE = 300V 65 I C = 150A 510 15V, L = 100μH,VCE = 600V 110 Turn-off Delay Time VGE = 15V Current Fall Time I C = 150A 430 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time 44 VCC = 400V 110 Turn-off Delay Time VGE = 15V Current Fall Time I C = 150A 480 Turn-off Switching Energy μJ 65 ns 95 RG = 1.0Ω 8 54 Turn-on Switching Energy (Diode) ns 4295 Current Rise Time Eon2 nC 8615 Inductive Switching (125°C) Turn-on Switching Energy V 8810 TJ = +25°C 7 Eon1 pF 60 RG = 1.0Ω 8 6 UNIT A Current Rise Time 5 MAX 450 44 Turn-on Switching Energy (Diode) Eoff 350 f = 1 MHz VCC = 400V Eon2 tf VGE = 0V, VCE = 25V Inductive Switching (25°C) Turn-on Switching Energy td(off) 9200 TJ = 175°C, R G = 4.3Ω 8, VGE = Turn-on Delay Time Eon1 tr TYP Capacitance Gate-Collector ("Miller ") Charge Switching Safe Operating Area MIN 8880 TJ = +125°C μJ 9735 67 5460 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions R R θJC θJC VIsolation WT 1 Min Typ Max Unit Junction to Case (IGBT) - - 0.28 °C/W Junction to Case (DIODE) - - .30 6.1 - RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight 2500 - gm Continuous current limited by case temperature. 2 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 For Combi devices, Ices includes both IGBT and FRED leakages 050-7633 Rev A 10-2008 4 See MIL-STD-750 Method 3471. 5 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 6 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 7 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 8 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. Downloaded from Elcodis.com electronic components distributor Typical Performance Curves = 15V 400 TJ = -55°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C 250 TJ = 125°C 200 TJ = 175°C 150 100 50 0 150 100 50 0 0 10V 200 150 9V 100 8V 50 7V FIGURE 2, Output Characteristics (TJ = 125°C) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) TJ = -55°C TJ = 25°C TJ = 125°C TJ = 175°C 200 250 16 250μs PULSE TEST