APT15D40KG

400V 15A APT15D40K APT15D40KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-220 Package • Low Forward Voltage • Cooler Operation • Low Leakage Current • Increased System Power Density • PFC 1 2 • Higher Reliability Systems 2 1 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT15D40K(G) UNIT 400 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 140°C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 36 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 110 IF(RMS) IFSM TJ,TSTG TL Amps -55 to 175 Operating and StorageTemperature Range 300 Lead Temperature for 10 Sec. °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 15A 1.3 1.5 IF = 30A 1.6 IF = 15A, TJ = 125°C 1.2 VR = VR Rated 150 VR = VR Rated, TJ = 125°C 500 UNIT Volts 33 µA pF 7-2015 VF Characteristic / Test Conditions 053-4010 Rev G Symbol DYNAMIC CHARACTERISTICS APT15D40K(G) Characteristic Symbol Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 19 trr Reverse Recovery Time - 35 Qrr Reverse Recovery Charge - 60 - 3 - 95 ns - 300 nC - 6 - 43 ns - 540 nC - 21 IRRM IF = 15A, diF/dt = -200A/µs VR = 266V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF =15A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 266V, TC = 125°C IF = 15A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 266V, TC = 125°C ns nC - - Amps Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Thermal Resistance WT Package Weight Torque Maximum Mounting Torque TYP MAX 1.35 80 0.07 oz 1.9 g 10 lb•in 1.1 N•m 0.9 0.7 0.80 0.5 Note: 0.60 0.3 0.40 t 0.1 0.05 10 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -5 10-4 RC MODEL 7-2015 Junctio n temp (°C) 053-4010 Rev G t1 t2 0.20 0 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 1.40 1.00 Powe r (watts ) 0.725 °C/W 0.00166 J/ °C 0.455 °C/W 0.0381 J/ °C 0.172 °C/W 0.645 J/ °C Case temperatur e (°C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL °C/W Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 1.20 UNIT TYPICAL PERFORMANCE CURVES trr, REVERSE RECOVERY TIME (ns) 40 30 TJ = 125°C 20 TJ = 25°C TJ = 150°C 0 TJ = -55°C Qrr, REVERSE RECOVERY CHARGE (nC) 700 T = 125°C J V = 266V R 30A 600 500 15A 400 300 7.5A 200 100 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 20 25 T = 125°C J V = 266V IRRM 0.8 30A R 20 15 15A 10 7.5A 5 Duty cycle = 0.5 T = 175°C J 30 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 40 35 trr trr 0.6 25 20 15 0.4 10 Qrr 0.2 5 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 7-2015 50 053-4010 Rev G 100 150 CJ, JUNCTION CAPACITANCE (pF) 200 7.5A 60 40 1.0 0.0 15A 80 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change Qrr 1.2 30A 0 1.4 R 100 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 800 APT15D40K(G) T = 125°C J V = 266V 0 0 50 10 TJ = 150°C 120 IF, FORWARD CURRENT (A) 60 APT15D40K(G) Vr diF /dt Adjus t +18V APT30M75B2LL 0V D.U.T. 30µH trr/Q rr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 1 diF/dt - Rate of Diode Current Change Through Zero Crossing. Zer o 3 IRRM - Maximum Reverse Recovery Current 4 2 4 trr - Reverse Recovery Time measured from zero crossing where diode current goes from positive to negative, to the point at 5 3 2 which the straight line through IRRM and 0.25, IRRM passes through zero. 5 Qrr - Area Under the Curve Defined by IRRM and tRR. Figure 10. Diode Reverse Recovery Waveform Definition TO-220 (K) Package Outline e3 100% Sn Cathode 053-4010 Rev G 7-2015 Cathode Anode Dimensions in millimeters and [inches] 0.25 I RRM APT15D40K(G) Disclaimer: 053-4010 Rev G Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer's final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. 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