APT20GN60BG

TYPICAL PERFORMANCE CURVES APT20GN60B APT20GN60B_S(G) APT20GN60S APT20GN60B(G) APT20GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 D3PAK 47 (S) C G G • 600V Field Stop • • • • C Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated E E C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT20GN60B_S(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 40 I C2 Continuous Collector Current @ TC = 110°C 24 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 @ TC = 175°C UNIT Volts Amps 60 Switching Safe Operating Area @ TJ = 175°C 60A @ 600V Total Power Dissipation Watts 136 Operating and Storage Junction Temperature Range -55 to 175 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) (VCE = VGE, I C = 290µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 125°C) I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.1 1.5 1.9 25 2 300 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.7 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 7-2009 MIN Rev B Characteristic / Test Conditions 050-7614 Symbol DYNAMIC CHARACTERISTICS Symbol APT20GN60B_S(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA SCSOA Total Gate Charge 1110 VGE = 0V, VCE = 25V 50 f = 1 MHz 35 Gate Charge 9.5 VGE = 15V 120 VCE = 300V 10 I C = 20A Gate-Collector ("Miller ") Charge TJ = 175°C, R G = 4.3Ω Switching Safe Operating Area VGE = VCC = 360V, VGE = 15V, TJ = 150°C, R G = 4.3Ω 7 tr Current Rise Time VCC = 400V 10 td(off) Turn-off Delay Time VGE = 15V 140 I C = 20A 95 RG = 4.3Ω 7 230 TJ = +25°C 260 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) 5 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Inductive Switching (125°C) 9 tr Current Rise Time VCC = 400V 10 td(off) Turn-off Delay Time VGE = 15V 160 I C = 20A RG = 4.3Ω 7 130 250 TJ = +125°C 450 tf 6 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy ns µJ 580 Current Fall Time Eon1 nC µs 9 Eon1 V 6 Inductive Switching (25°C) 4 pF A Turn-on Delay Time Current Fall Time UNIT 60 td(on) tf MAX 70 7, 15V, L = 100µH,VCE = 600V Short Circuit Safe Operating Area TYP Capacitance 3 Gate-Emitter Charge MIN 55 66 ns µJ 750 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) 1.1 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7614 Rev B 7-2009 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT20GN60B_S(G) 90 40 15V = 15V IC, COLLECTOR CURRENT (A) 30 25 TJ = 125°C 20 15 TJ = 175°C 10 TJ = -55°C 5 FIGURE 1, Output Characteristics(TJ = 25°C) 30 10V 20 9V TJ = -55°C TJ = 25°C 40 TJ = 125°C TJ = 175°C 30 20 10 0 TJ = 25°C. 250µs PULSE TEST