APT30GN60BG

TYPICAL PERFORMANCE CURVES APT30GN60B APT30GN60B_S(G) APT30GN60S APT30GN60B(G) APT30GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 D3PAK 47 (S) C G G • 600V Field Stop • • • • C E E Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT30GN60B_S(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 63 I C2 Continuous Collector Current @ TC = 110°C 37 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 90 Switching Safe Operating Area @ TJ = 150°C 90A @ 600V Total Power Dissipation Watts 203 Operating and Storage Junction Temperature Range -55 to 175 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) (VCE = VGE, I C = 430µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.1 1.5 1.9 25 2 300 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.7 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 7-2009 MIN Rev B Characteristic / Test Conditions 050-7616 Symbol APT30GN60B_S(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA SCSOA Total Gate Charge 1750 VGE = 0V, VCE = 25V 70 f = 1 MHz 50 Gate Charge 9.0 VGE = 15V 165 VCE = 300V 10 I C = 30A Gate-Collector ("Miller ") Charge TJ = 150°C, R G = 4.3Ω Switching Safe Operating Area VGE = VCC = 360V, VGE = 15V, TJ = 150°C, R G = 4.3Ω 7 tr Current Rise Time VCC = 400V 14 td(off) Turn-off Delay Time VGE = 15V 155 I C = 30A 55 RG = 4.3Ω 7 525 TJ = +25°C 565 Eon2 Turn-on Switching Energy Turn-on Switching Energy (With Diode) 5 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Inductive Switching (125°C) 12 tr Current Rise Time VCC = 400V 14 td(off) Turn-off Delay Time VGE = 15V 180 I C = 30A RG = 4.3Ω 7 75 555 TJ = +125°C 950 tf 6 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Wtih Diode) Eoff Turn-off Switching Energy ns µJ 700 Current Fall Time Eon1 nC µs 12 Eon1 V 6 Inductive Switching (25°C) 4 pF A Turn-on Delay Time Current Fall Time UNIT 90 td(on) tf MAX 90 7, 15V, L = 100µH,VCE = 600V Short Circuit Safe Operating Area TYP Capacitance 3 Gate-Emitter Charge MIN 55 66 ns µJ 895 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .74 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 050-7616 Rev B 7-2009 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT30GN60B_S(G) 100 90 V GE 15V = 15V 13V 12V TJ = 125°C 40 TJ = 175°C 30 20 11V 60 10V 40 9V 20 8V 10 0 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) TJ = -55°C 70 TJ = 25°C 60 TJ = 125°C 50 TJ = 175°C 40 30 20 10 0 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 TJ = 25°C. 250µs PULSE TEST