APT30D60BG

APT30D60BG Fast Soft Recovery Rectifier Diode Product Overview The APT30D60BG device is a 600 V, 30 A Fast Soft Recovery Rectifier Si Diode in a TO-247 package. Features The following are key features of the APT30D60BG device: • Fast recovery times • Soft recovery characteristics • Low forward voltage • Low leakage current • RoHS compliant Benefits The following are benefits of the APT30D60BG device: • Low switching losses • Low noise (EMI) switching • Cooler operation • Higher reliability systems • Increased system power density Applications The APT30D60BG device is designed for the following applications: • Power factor correction (PFC) • Anti-parallel diode ◦ Switch-mode power supply ◦ Inverters • Freewheeling diode ◦ Motor controllers ◦ Inverters/converters • Snubber diode 053-6002 APT30D60BG Data Sheet Revision I 1 Device Specifications Device Specifications This section shows the specifications of the APT30D60BG device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the APT30D60BG device. TC = 25 °C, unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Rating Unit VR Maximum DC reverse voltage 600 V VRRM Maximum peak repetitive reverse voltage VRWM Maximum working peak reverse voltage IF(AV) Maximum average forward current (TC = 140 °C, duty cycle = 0.5) 30 A IFSM Non-repetitive forward surge current (TJ = 45 °C, 8.3 ms) 320 The following table shows the thermal and mechanical characteristics of the APT30D60BG device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic RθJC Min Typ Max Unit Junction-to-case thermal resistance 0.67 °C/W RθJA Junction-to-ambient thermal resistance 40 TJ, TSTG Operating and storage temperature range TL Lead temperature for 10 seconds Wt Package weight –55 Mounting torque, 6-32 or M3 screw 053-6002 APT30D60BG Data Sheet Revision I 175 °C 300 0.22 oz 6.2 g 10 lbf•m 1.1 N•m 2 Device Specifications Electrical Performance The following table shows the static characteristics of the APT30D60BG device. TJ = 25 °C, unless otherwise specified. Table 3 • Static Characteristics Symbol Characteristic Test Conditions VF Forward voltage IRM CJ Maximum reverse leakage current Junction capacitance Min Typ Max Unit IF = 30 A 1.6 1.8 V IF = 60 A 1.9 IF = 30 A, TJ = 125 °C 1.4 VR = VR rated 250 µA VR = VR rated, TJ = 125 °C 500 VR = 200 V 44 pF The following table shows the dynamic characteristics of the APT30D60BG device. Table 4 • Dynamic Characteristics Symbol Characteristic Test Conditions trr Reverse recovery time IF = 1 A, diF/dt = –100 A/µs Min Typ Max Unit 23 ns 85 ns VR = 30 V trr Reverse recovery time IF = 30 A, diF/dt = –200 A/µs Qrr Reverse recovery charge 130 nC IRRM Maximum reverse recovery current 4 A trr Reverse recovery time 160 ns VR = 400 V IF = 30 A, diF/dt = –200 A/µs VR = 400 V, TJ = 125 °C Qrr Reverse recovery charge 700 nC IRRM Maximum reverse recovery current 8 A trr Reverse recovery time 70 ns IF = 30 A, diF/dt = –1000 A/µs VR = 400 V, TJ = 125 °C Qrr Reverse recovery charge 1300 nC IRRM Maximum reverse recovery current 30 A 053-6002 APT30D60BG Data Sheet Revision I 3 Device Specifications Typical Performance Curves This section shows the typical performance curves of the APT30D60BG device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Reverse Recovery Time vs. Current Rate of Change 053-6002 APT30D60BG Data Sheet Revision I 4 Device Specifications Figure 4 • Reverse Recovery Charge vs. Current Rate of Change Figure 5 • Reverse Recovery Current vs. Current Rate of Change Figure 6 • Dynamic Parameters vs. Junction Temperature Figure 7 • Maximum Average Forward Current vs. Case Temperature Figure 8 • Junction Capacitance vs. Reverse Voltage 053-6002 APT30D60BG Data Sheet Revision I 5 Device Specifications Reverse Recovery Overview The following figure illustrates the diode test circuit of the APT30D60BG device. Figure 9 • Diode Test Circuit The following figure illustrates the diode reverse recovery waveform and definitions of the APT30D60BG device. Figure 10 • Diode Reverse Recovery Waveform and Definitions 1. IF—Forward conduction current. 2. diF/dt—Rate of diode current change through zero crossing. 3. IRRM—Maximum reverse recovery current. 4. trr—Reverse recovery time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 • IRRM passes through zero. 5. Qrr—Area under the curve defined by IRRM and trr. 053-6002 APT30D60BG Data Sheet Revision I 6 Package Specification Package Specification This section shows the package specification of the APT30D60BG device. Package Outline Drawing The following figure illustrates the TO-247 (B) package outline of the APT30D60BG device. Figure 11 • Package Outline Drawing 053-6002 APT30D60BG Data Sheet Revision I 7 Package Specification The following table shows the TO-247 dimensions and should be used in conjunction with the package outline drawing. Table 5 • TO-247 Dimensions SYMBOL MIN MAX MIN MAX [mm] [mm] [INCH] [INCH] A 4.69 5.31 0.185 0.209 B 1.49 2.49 0.059 0.098 C 2.21 2.59 0.087 0.102 D 0.40 0.79 0.016 0.031 E 5.38 6.20 0.212 0.244 F 3.50 3.81 0.138 0.150 G 6.15 BSC H 20.80 21.46 0.819 0.845 I 19.81 20.32 0.780 0.800 J 4.00 4.50 0.157 0.177 K 1.01 1.40 0.040 0.055 L 2.87 3.12 0.113 0.123 M 1.65 2.13 0.065 0.084 N 15.49 16.26 0.610 0.640 O 13.50 14.50 0.531 0.571 P 16.50 17.50 0.650 0.689 Q 5.45 BSC R 2.00 2.75 0.079 0.108 S 7.10 7.50 0.280 0.295 TERMINAL 1 CATHODE TERMINAL 2 ANODE TERMINAL 3 CATHODE 0.242 BSC 0.215 BSC 053-6002 APT30D60BG Data Sheet Revision I 8 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. 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(Nasdaq: MCHP), and its corporate affiliates are leading providers of smart, connected and secure embedded control solutions. Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market. These solutions serve more than 120,000 customers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets. Headquartered in Chandler, Arizona, the company offers outstanding technical support along with dependable delivery and quality. Learn more at www.microsemi.com. 053-6002 | April 2020 | Released 053-6002 APT30D60BG Data Sheet Revision I 9