APT50M38JFLL

APT50M38JFLL 500V POWER MOS 7 R 88A FREDFET 0.038Ω S S ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 27 2 T- D G D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M38JFLL UNIT 500 Volts Drain-Source Voltage 88 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 352 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 88 (Repetitive and Non-Repetitive) 1 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 44A) TYP MAX UNIT Volts 0.038 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 4-2004 Characteristic / Test Conditions 050-7030 Rev D Symbol APT50M38JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 88A @ 25°C Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 1295 VDD = 333V, VGS = 15V 6 nC 4 RG = 0.6Ω Eon UNIT pF 125 270 70 140 17 22 50 VDD = 250V Fall Time MAX 12000 2540 ID = 88A @ 25°C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN Test Conditions ID = 88A, RG = 3Ω 940 INDUCTIVE SWITCHING @ 125°C 1875 VDD = 333V VGS = 15V ID = 88A, RG = 3Ω µJ 1165 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 352 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -88A) 1.3 Volts dv/ Peak Diode Recovery 15 V/ns dt dv/ dt 88 5 t rr Reverse Recovery Time (IS = -88A, di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -88A, di/dt = 100A/µs) Tj = 25°C 2.2 Tj = 125°C 9.0 IRRM Peak Recovery Current (IS = -88A, di/dt = 100A/µs) Tj = 25°C 16 Tj = 125°C 33 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.18 0.9 0.7 0.12 0.10 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7030 Rev D 4-2004 0.20 0.14 0.3 0.06 0 t2 0.1 Peak TJ = PDM x ZθJC + TC 0.05 10-5 t1 Duty Factor D = t1/t2 0.04 0.02 SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 0.93mH, RG = 25Ω, Peak IL = 88A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID88A di/dt ≤ 700A/µs VR ≤ 500 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 UNIT 10 Typical Performance Curves 0.0244 0.0731F 0.133 0.701F 0.0218 20.1F Case temperature ID, DRAIN CURRENT (AMPERES) 15 &10V Junction temp. ( ”C) Power (Watts) APT50M38JFLL 300 RC MODEL 8V 250 7.5V 200 7V 150 6.5V 100 6V 50 5.5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @