APT50M65JFLL

APT50M65JFLL 500V POWER MOS 7 R 0.065Ω 58A FREDFET S S ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package D G S MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M65JFLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 58 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 232 -55 to 150 °C 300 Amps 58 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 TYP MAX 500 (VGS = 10V, 29A) UNIT Volts 0.065 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 12-2003 BVDSS Characteristic / Test Conditions 050-7032 Rev D Symbol APT50M65JFLL DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Characteristic Test Conditions Input Capacitance VGS = 0V Output Capacitance VDS = 25V 3 Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time td(off) tf ID = 67A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time VDD = 250V Turn-off Delay Time ID = 67A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 6 ns 1035 VDD = 333V, VGS = 15V Eon nC 30 RG = 0.6Ω Eon UNIT pF 87 141 40 70 12 28 29 VGS = 10V Gate-Source Charge MAX 7010 1390 VDD = 250V Qgd tr TYP f = 1 MHz Reverse Transfer Capacitance Total Gate Charge MIN ID = 67A, RG = 3Ω 845 INDUCTIVE SWITCHING @ 125°C 1556 VDD = 333V VGS = 15V ID = 67A, RG = 3Ω µJ 1013 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions MIN TYP MAX 58 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 232 Diode Forward Voltage 2 (VGS = 0V, IS = -67A) 1.3 Volts 15 V/ns Peak Diode Recovery dv/ dt 5 Reverse Recovery Time (IS = -67A, di/dt = 100A/µs) Tj = 25°C 270 Tj = 125°C 540 Q rr Reverse Recovery Charge (IS = -67A, di/dt = 100A/µs) Tj = 25°C 2.6 Tj = 125°C 9.6 IRRM Peak Recovery Current (IS = -67A, di/dt = 100A/µs) Tj = 25°C 17 Tj = 125°C 31 t rr UNIT ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.7 0.15 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 12-2003 050-7032 Rev D 0.9 0.20 0.3 t1 t2 0.05 0.1 0 SINGLE PULSE 0.05 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -58A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.10 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT50M65JFLL 180 Junction temp. ( ”C) 0.0528 Power (Watts) 0.0651 0.123 0.0203F 0.173F 0.490F ID, DRAIN CURRENT (AMPERES) RC MODEL 15 &10V 160 8V 140 120 7V 100 80 6.5V 60 6V 40 5.5V 20 Case temperature 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 140 120 100 80 60 TJ = +125°C 40 TJ = +25°C 20 0 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE GS 1.3 1.2 1.1 VGS=10V 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 70 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 1.2 I D V = 29A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO V = 10V @ 29A 1.15 60 0.0 -50 1.4 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 12-2003 160 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @