APT65GP60B2G

APT65GP60B2 600V ® POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 54A • Low Gate Charge • 50 kHz operation @ 400V, 76A • Ultrafast Tail Current shutoff • SSOA rated G C E C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT65GP60B2 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 VGEM 7 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 1 UNIT Volts 100 @ TC = 25°C Amps 96 250 @ TC = 25°C 250A@600V Safe Operating Area @ TJ = 150°C Watts 833 Total Power Dissipation -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125°C) 2.1 3 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 1000 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 5000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA 4-2003 MIN Rev A Characteristic / Test Conditions 050-7438 Symbol APT65GP60B2 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions 7400 VGE = 0V, VCE = 25V 580 Reverse Transfer Capacitance f = 1 MHz 35 Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.5 210 VCE = 300V 50 I C = 65A 65 Input Capacitance Coes Output Capacitance Cres VGEP Qge Qgc SSOA TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 250 A 15V, L = 100µH,VCE = 600V td(on) tr td(off) tf Eon1 Eon2 Turn-on Delay Time Current Rise Time Turn-on Switching Energy Turn-on Delay Time I C = 65A 65 R G = 5Ω 1408 Inductive Switching (125°C) VCC = 400V 30 VGE = 15V 128 I C = 65A 91 Current Fall Time Turn-on Switching Energy (Diode) 54 R G = 5Ω 4 Eon2 µJ 896 Turn-off Delay Time Turn-on Switching Energy ns 605 TJ = +25°C 5 Current Rise Time Turn-off Switching Energy 54 6 Eon1 Eoff 91 4 Turn-on Switching Energy (Diode) td(on) tf VGE = 15V Current Fall Time Turn-off Switching Energy td(off) 30 Turn-off Delay Time Eoff tr Inductive Switching (25°C) VCC = 400V 5 ns 605 TJ = +125°C 1925 6 µJ 1470 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .15 RΘJC Junction to Case (DIODE) N/A Package Weight 6.10 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. 050-7438 Rev A 4-2003 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT65GP60B2 100 100 VGE = 15V. 250µs PULSE TEST