APT75GN120JDQ3

APT75GN120JDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 ® E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. C G ISOTOP ® • 1200V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Intergrated Gate Resistor: Low EMI, High Reliability S OT 22 7 "UL Recognized" file # E145592 C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT75GN120JDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 124 I C2 Continuous Collector Current @ TC = 110°C 57 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 225 Switching Safe Operating Area @ TJ = 150°C 225A @ 1200V Total Power Dissipation 379 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) MAX 5.0 5.8 6.5 1.4 1.7 2.1 Units 1200 (VCE = VGE, I C = 3mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 2.0 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 200 2 Gate-Emitter Leakage Current (VGE = ±20V) 600 10 Intergrated Gate Resistor CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD nA Ω 10-2005 V(BR)CES MIN Rev B Characteristic / Test Conditions 050-7618 Symbol APT75GN120JDQ3 DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge td(on) tr td(off) tf Eon1 Eon2 tr td(off) tf A ns 8045 µJ 9620 7640 Inductive Switching (125°C) 60 VCC = 800V 41 VGE = 15V 725 RG = 1.0Ω 7 200 8620 I C = 75A Current Fall Time 44 Turn-on Switching Energy (Diode) nC 110 TJ = +25°C Turn-off Delay Time Turn-on Switching Energy V 620 6 Eon2 pF 225 RG = 1.0Ω 7 5 UNIT 245 41 4 MAX 30 VCC = 800V Current Rise Time Turn-off Switching Energy 425 I C = 75A Eon1 Eoff 9.0 VGE = 15V VGE = 15V Turn-on Switching Energy (Diode) Turn-on Delay Time Gate Charge 60 Current Fall Time td(on) 210 Inductive Switching (25°C) Turn-off Delay Time Turn-off Switching Energy 275 f = 1 MHz 15V, L = 100µH,VCE = 1200V Current Rise Time Eoff VGE = 0V, VCE = 25V TJ = 150°C, R G = 4.3Ω 7, VGE = Turn-on Delay Time Turn-on Switching Energy 4800 I C = 75A Switching Safe Operating Area TYP Capacitance VCE = 600V Qge SSOA MIN 55 TJ = +125°C ns µJ 13000 66 11400 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .33 RθJC Junction to Case (DIODE) .56 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7618 Rev B 10-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TJ = -55°C 120 TJ = 25°C 100 TJ = 125°C 80 60 40 20 0 IC, COLLECTOR CURRENT (A) 120 100 TJ = -55°C 80 TJ = 25°C TJ = 125°C 60 40 20 0 0 10V 80 60 9V 40 8V 20 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST