APT100GN120JDQ4

APT100GN120JDQ4 1200V, 100A, VCE(ON) = 1.7V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short cuircuit fault. Low gate charge simplifies gate drive design and minimizes losses. • 1200V Field Stop • Trench Gate: Low VCE(ON) • Easy Paralleling • Integrated Gate Resistor: Low EMI, High Reliability • RoHS Compliant E G C E S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. Ratings 1200 ±30 153 70 300 300A @ 1200V 446 -55 to 150 Watts °C Amps Unit Volts Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 6mA) Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Integrated Gate Resistor Min 1200 5.0 1.4 - Typ 5.8 1.7 2.0 7.5 Max 6.5 2.1 200 1500 600 - Unit Volts μA nA Ω 050-7629 Rev A 9-2008 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT100GN120JDQ4 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 600V IC = 100A TJ = 150°C, RG = 4.3Ω , VGE = 15V, L = 100μH, VCE= 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V 4 5 7 Min 300 - Typ 6500 365 280 9.5 540 50 295 Max - Unit pF V Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy nC A 50 50 615 105 11 15 9.5 50 50 725 210 12 22 14 mJ ns μJ ns IC = 100A RG = 1.0Ω 7 TJ = +25°C Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy 4 5 6 Inductive Switching (125°C) VCC = 800V VGE = 15V IC = 100A RG = 1.0Ω 7 TJ = +125°C - Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions R R θJC θJC Min 2500 Typ 29.2 - Max 0.28 Unit °C/W Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws. RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 0.32 10 1.1 g in·lbf N·m Volts WT Torque VIsolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-7629 Rev A 9-2008 Typical Performance Curves 300 300 V GE APT100GN120JDQ4 15V 13V IC, COLLECTOR CURRENT (A) 250 12V = 15V IC, COLLECTOR CURRENT (A) 250 TJ = -55°C TJ = 25°C TJ = 125°C TJ = 175°C 200 200 11V 150 10V 9V 8V 7V 150 100 100 50 0 50 0 0 1.0 2.0 3.0 4.0 5.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST