APT8011JLL

APT8011JLL 800V 51A 0.110Ω POWER MOS 7 R S S MOSFET 27 2 T- D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. SO "UL Recognized" ISOTOP ® D • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT8011JLL UNIT 800 Volts 51 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 204 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 51 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 25.5A) TYP MAX Volts 0.110 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 2-2004 Characteristic / Test Conditions 050-7093 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT8011JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1890 Reverse Transfer Capacitance f = 1 MHz 340 VGS = 10V 650 VDD = 400V 100 C rss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 51A @ 25°C tf 23 VDD = 400V ID = 51A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 19 INDUCTIVE SWITCHING @ 25°C 6 1390 VDD = 533V, VGS = 15V ID = 51A, RG = 5Ω 1545 INDUCTIVE SWITCHING @ 125°C 6 ns 83 RG = 0.6Ω Fall Time nC 23 VGS = 15V Turn-off Delay Time pF 525 RESISTIVE SWITCHING Rise Time td(off) UNIT 9480 VGS = 0V 3 MAX µJ 2095 VDD = 533V, VGS = 15V ID = 51A, RG = 5Ω 1800 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID51A, dl S /dt = 100A/µs) Q Reverse Recovery Charge (IS = -ID51A, dl S/dt = 100A/µs) Peak Diode Recovery dv/ MAX 51 IS rr dv/ dt TYP 204 (Body Diode) 1.3 (VGS = 0V, IS = -ID51A) dt UNIT Amps Volts 1000 ns 34 µC 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.77mH, RG = 25Ω, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID51A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.12 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7093 Rev A 2-2004 0.20 0.16 0.3 0.1 0 t1 t2 0.04 SINGLE PULSE 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 10 Typical Performance Curves APT8011JLL RC MODEL Junction temp. (°C) 0.0375 0.0554F Power (watts) 0.142 0.751F Case temperature. (°C) ID, DRAIN CURRENT (AMPERES) 160 6V 140 VGS =15 & 10V 120 5.5V 100 5V 80 60 4.5V 40 20 4V 0 100 80 TJ = -55°C 60 TJ = +25°C 40 TJ = +125°C 20 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) NORMALIZED TO = 10V @ 25.5A GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 140 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D V 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 25.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE Downloaded from Elcodis.com electronic components distributor VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 2-2004 120 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @