APTGL60H120T3G

APTGL60H120T3G Full bridge Trench + Field Stop IGBT4 Power module VCES = 1200V IC = 60A @ Tc = 80°C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  Trench + Field Stop IGBT 4 - Low voltage drop - Low leakage current - Low switching losses - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Easy paralleling due to positive TC of VCEsat  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage TC = 25°C Max ratings 1200 80 60 100 ±20 280 Tj = 150°C 100A @ 1100V TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-6 APTGL60H120T3G – Rev 2 Symbol VCES November, 2017 Absolute maximum ratings (per IGBT) APTGL60H120T3G Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 150°C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Min Typ 5.0 1.85 2.25 5.8 Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Dynamic Characteristics (per IGBT) Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions Min VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=50A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2 TJ = 25°C VGE = ±15V TJ = 150°C VCE = 600V IC = 50A TJ = 25°C RG = 8.2 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Typ 2770 205 160 pF 0.38 µC 130 20 300 45 ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A Junction to Case Thermal Resistance mJ 0.53 °C/W Reverse diode ratings and characteristics (per diode) Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Test Conditions Min Typ VR = 1200V Tc = 80°C IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt = 200A/µs Tj = 125°C 60 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C Tj = 125°C 350 560 2890 Junction to Case Thermal Resistance Max 1200 100 3 V ns nC 0.9 www.microsemi.com Unit V µA A November, 2017 VF Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current °C/W 2-6 APTGL60H120T3G – Rev 2 Symbol VRRM IRM IF APTGL60H120T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp B25 / 85     T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGL60H120T3G – Rev 2 November, 2017 Package outline (dimensions in mm) APTGL60H120T3G Typical Performance Curve Output Characteristics (VGE=15V) 100 Output Characteristics 100 TJ = 150°C 80 TJ=25°C 60 VGE=19V 60 TJ=150°C IC (A) IC (A) 80 40 20 VGE=15V 40 VGE=9V 20 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 100 VCE = 600V VGE = 15V RG = 8.2 Ω TJ = 150°C 60 12 E (mJ) IC (A) TJ=25°C 16 40 3 4 Eon 8 Eoff TJ=150°C 4 0 0 5 6 7 8 9 10 11 12 0 13 20 40 60 80 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 12 120 100 10 VCE = 600V VGE =15V IC = 50A TJ = 150°C 8 6 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 20 1 Eoff 60 40 4 VGE=15V TJ=150°C RG=8.2 Ω 20 2 0 0 10 20 30 Gate Resistance (ohms) 0 40 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 IGBT Single Pulse 0.05 0 0.00001 November, 2017 0.5 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGL60H120T3G – Rev 2 Thermal Impedance (°C/W) 0.6 APTGL60H120T3G Forward Characteristic of diode 140 VCE=600V D=50% RG=8.2 Ω TJ=150°C Tc=75°C ZCS 100 75 50 IF, Forward Current (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 125 ZVS 25 Hard switching TJ=125°C 120 100 80 TJ=25°C 60 40 20 0 0 10 20 30 40 50 60 IC (A) 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 VF, Anode to Cathode Voltage (V) 1 0.8 0.9 DIODE 0.7 0.4 0.2 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10 November, 2017 0.6 www.microsemi.com 5-6 APTGL60H120T3G – Rev 2 Thermal Impedance (°C/W) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration APTGL60H120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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