APTGT35H120T3G

APTGT35H120T3G Full - Bridge Fast Trench + Field Stop IGBT3 Power Module VCES = 1200V IC = 35A @ Tc = 80°C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  Fast Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Low stray inductance  Internal thermistor for temperature monitoring All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Easy paralleling due to positive TC of VCEsat  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 55 35 70 ±20 208 Tj = 125°C 70A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-6 APTGT35H120T3G – Rev 3 November, 2017 Absolute maximum ratings (per IGBT) APTGT35H120T3G Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V ; VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ 5.0 1.7 2.0 5.8 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics (per IGBT) Symbol Cies Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 35A RG = 27 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 35A RG = 27 VGE = ±15V VBus = 600V Tj = 125°C IC = 35A RG = 27 Min Typ 2.5 0.15 90 30 420 nF ns 70 90 50 ns 520 90 3.5 mJ 4.1 0.6 °C/W Max Unit 1200 V 250 µA Reverse diode ratings and characteristics (per diode) VRRM IRM IF VF Test Conditions Min Typ Peak Repetitive Reverse Voltage Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage Tc = 70°C IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 800V di/dt =200A/µs Er Reverse Recovery Energy IF = 30A VR = 800V 30 2.0 2.3 Tj = 125°C 1.8 Tj = 25°C 370 Tj = 125°C Tj = 25°C 500 660 Tj = 125°C 3450 Tj = 125°C 1.6 A 2.5 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 www.microsemi.com °C/W 2-6 APTGT35H120T3G – Rev 3 November, 2017 Symbol Characteristic APTGT35H120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T   exp  B25 / 85   T25 T   Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax -25 125 125 3 110 Unit V °C N.m g See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT35H120T3G – Rev 3 November, 2017 Package outline (dimensions in mm) APTGT35H120T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 70 80 70 50 TJ=125°C 40 30 VGE=15V 40 30 VGE=9V 10 10 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 0 3.5 8 TJ=25°C 60 50 1 VCE = 600V VGE = 15V RG = 27Ω TJ = 125°C 7 6 E (mJ) TJ=125°C 40 30 5 2 1 Eoff Eon 0 0 5 6 7 8 9 10 11 0 12 10 20 30 40 50 60 70 80 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 80 VCE = 600V VGE =15V IC = 35A TJ = 125°C 70 Eon 60 5 IC (A) 6 4 3 10 7 3 4 20 8 2 VCE (V) Energy losses vs Collector Current Transfert Characteristics 70 E (mJ) VGE=13V 20 20 IC (A) VGE=17V 50 IC (A) IC (A) 60 TJ = 125°C 60 TJ=25°C Eoff 50 40 30 4 VGE=15V TJ=125°C RG=27Ω 20 3 10 2 0 25 45 65 85 Gate Resistance (ohms) 105 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGT35H120T3G – Rev 3 November, 2017 Thermal Impedance (°C/W) 0.7 APTGT35H120T3G Forward Characteristic of diode 80 VCE=600V D=50% RG=27Ω TJ=125°C TC=75°C 60 ZVS ZCS 40 70 60 50 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 40 30 20 20 0 0 10 TJ=125°C TJ=25°C 10 hard switching 0 20 30 IC (A) 40 50 0 60 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 Diode 0.9 0.7 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGT35H120T3G – Rev 3 November, 2017 Thermal Impedance (°C/W) 1.4 APTGT35H120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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