ARF461AG

ARF461A(G) ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 250 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. • RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter ARF461AG/BG VDSS Drain-Source Voltage 1000 VDGO Drain-Gate Voltage 1000 ID Unit V Continuous Drain Current @ TC = 25°C 6.5 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 250 W 0.50 °C/W RθJC TJ, TSTG TL Junction to Case Operating and Storage Junction Temperature Range -55 to 150 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Parameter Min BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 1000 VDS(ON) On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V) 6.5 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) gfs Forward Transconductance (VDS = 25V, ID = 3.25A) 3 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 VGS(TH) Max ±100 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Unit V μA nA mhos 5 Volts 6-2008 IDSS Typ 050-5987 Rev D Symbol Dynamic Characteristics Symbol ARF461A/B Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 1700 Coss Output Capacitance VDS = 50V 175 Crss Reverse Transfer Capacitance f = 1MHz 50 td(on) Turn-On Delay Time tr td(off) Turn-off Delay Time tf Fall Time Unit pF 8 VGS = 15V Rise Time Max VDD = 0.5VDSS 5 ID = ID (Cont.) @ 25°C 21 RG = 1.6Ω 10.1 ns Functional Characteristics Symbol Characteristic GPS 1 Test Conditions Min Typ f = 40.68MHz 13 15 dB VGS = 0V VDD = 250V 70 75 % Common Source Amplifier Power Gain η Drain Efficiency Ψ Electrical Ruggedness VSWR 10:1 POUT = 150W Max Unit No Degradation in Output Power Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 5000 30 Class C VDD = 150V 25 1000 CAPACITANCE (pf) 20 GAIN (dB) Ciss Pout = 150W 15 10 500 Coss 100 Crss 50 5 ID, DRAIN CURRENT (AMPERES) 050-5987 Rev D 6-2008 8 6 .1 .5 1 5 10 50 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 26 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @