ARF463AP1G

ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. D Common Source G RF POWER MOSFETs TO-247 S N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 125 Volt, 81.36MHz Characteristics: • Output Power = 100 Watts. • Gain = 15dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF463A_BP1(G) VDSS Drain-Source Voltage 500 VDGO Drain-Gate Voltage 500 ID Continuous Drain Current @ TC = 25°C UNIT Volts 9 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 180 Watts Junction to Case 0.70 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VDS(ON) IDSS IGSS gfs VGS(TH) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 On State Drain Voltage 1 TYP (I D(ON) = 4.5A, VGS = 10V) MAX 5.0 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 4.5A) 2 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 Volts µA ±100 nA 4 mhos 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 3-2006 BVDSS Characteristic / Test Conditions 050-4924 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol ARF463A_BP1(G) Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN Turn-off Delay Time Fall Time MAX UNIT 670 VGS = 0V Rise Time TYP VDS = 50V 120 f = 1 MHz 50 VGS = 15V 5.6 VDD = 0.5 VDSS 4.3 ID = ID[Cont.] @ 25°C 13.5 RG = 1.6Ω 4.2 pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 81.36 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 125V Pout = 100W MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 3000 30 Class C VDD = 150V 25 CAPACITANCE (pf) 20 GAIN (dB) 1000 Pout = 150W 15 10 Ciss 500 Coss Crss 100 50 5 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency ID, DRAIN CURRENT (AMPERES) 050-4924 Rev B 3-2006 8 6 36 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @