ARF465BG

ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. • Specified 300 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class C) • Efficiency = 75% • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF465A/B VDSS Drain-Source Voltage 1200 VDGO Drain-Gate Voltage 1200 ID UNIT Volts Continuous Drain Current @ TC = 25°C 6 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 250 Watts Junction to Case 0.50 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1200 VDS(ON) On State Drain Voltage IDSS IGSS 1 TYP MAX Volts (I D(ON) = 3A, VGS = 10V) 7 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 25V, ID = 3A) 3 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor UNIT nA mhos 5 Volts 7-2003 BVDSS Characteristic / Test Conditions 050-4921 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol ARF465A/B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 1200 1500 VDS = 200V 80 100 f = 1 MHz 30 50 VGS = 15V 7 15 VDD = 0.5 VDSS 5 10 ID = ID[Cont.] @ 25°C 21 34 RG = 1.6Ω 12 25 MAX VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 6:1 VDD = 300V Pout = 150W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 10,000 25 Class C VDD = 300V CAPACITANCE (pf) GAIN (dB) 5000 Pout = 150W 20 15 10 10 0.1 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 40 50 60 70 80 90 100 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 30 24 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @