ARF466AG

ARF466A(G) ARF466B(G) TO-264 *G Denotes RoHS Compliant, Pb Free Terminal Finish. Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation. • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. • Specified 150 Volt, 40.68 MHz Characteristics: • Output Power = 300 Watts. • Gain = 16dB (Class AB) • Efficiency = 75% (Class C) All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter ARF466A_B(G) VDSS Drain-Source Voltage 1000 VDGO Drain-Gate Voltage 1000 ID Continuous Drain Current @ TC = 25°C UNIT Volts 13 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 357 Watts Junction to Case 0.35 °C/W RθJC TJ,TSTG TL Operating and Storage Junction Temperature Range -55 to 150 °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVDSS RDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 1 , TYP MAX 1000 Volts ) (VGS = 10V ID = 6.5A 1.0 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 25 Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3.3 ohms μA ±100 nA 9 mhos 4 Volts 7 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT 050-4925 Rev D 7-2009 Symbol ARF466A_B(G) DYNAMIC CHARACTERISTICS Symbol Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN Test Conditions Characteristic Turn-off Delay Time Fall Time MAX UNIT 2000 VGS = 0V Rise Time TYP VDS = 150V f = 1 MHz 165 VGS = 15V 12 VDD = 500 V 10 ID = 13A @ 25°C 43 RG = 1.6W 10 pF 75 ns FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 14 16 dB 70 75 % VGS = 2.5V η Drain Efficiency Ψ Electrical Ruggedness VSWR 10:1 VDD = 150V Pout = 300W MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380μS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 10,000 30 Class C VDD = 150V 25 Pout = 150W CAPACITANCE (pf) 20 GAIN (dB) Ciss 15 10 1000 500 Coss 100 Crss 50 5 0 30 10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 52 18 16 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @