VRF2933

VRF2933 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V(BR)DSS = 170V • 3:1 Load VSWR Capability at Specified Operating Conditions • 300W with 20dB Min. Gain @ 30MHz, 50V • Nitride Passivated • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • Improved Replacement for SD2933 • RoHS Compliant • Thermally Enhanced Package Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF2933 Unit 170 V Continuous Drain Current @ TC = 25°C 40 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 648 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature Max °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) 2.0 Max 5.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 2.0 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 2.0 μA gfs Forward Transconductance (VDS = 10V, ID = 20A) 8 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.27 °C/W mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor 050-4941 Rev E 7-2008 Thermal Characteristics Dynamic Characteristics Symbol VRF2933 Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 740 Coss Output Capacitance VDS = 50V 400 Crss Reverse Transfer Capacitance f = 1MHz 32 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W ηD f1 = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 300W ψ f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W Min Typ 18 22 Max dB 50 % No Degradation in Output Power 3:1 VSWR - All Phase Angles 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 30 55 50 45 25 6.5V ID, DRAIN CURRENT (A) 6V 35 30 5.5V 25 20 5V 15 4.5V 10 4V 3.5V 5 0 0 V 5 10 15 15 10 5 TJ= 125°C 0 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 2 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 100 ID, DRAIN CURRENT (V) Ciss 1.0E−9 C, CAPACITANCE (F) TJ= 25°C 20 0 20 1.0E−8 Coss 1.0E−10 Crss 1.0E−11 TJ= -55°C 0 10 20 30 40 50 60 VDS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage Downloaded from Elcodis.com electronic components distributor BVdss Line ID, DRAIN CURRENT (A) 40 050-4941 Rev E 7-2008 250μs PULSE TEST