HMC742LP5E

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC742LP5E v05.0610 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz Typical Applications Features The HMC742LP5E is ideal for: -19.5 to 12 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection • WiBro / WiMAX / 4G High Output IP3: +39 dBm • Microwave Radio & VSAT TTL/CMOS Compatible Serial, Parallel, or latched Parallel Control • Test Equipment and Sensors ±0.25 dB Typical Gain Step Error • IF & RF Applications Single +5V Supply 32 Lead 5x5mm SMT Package: 25mm2 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 1 Functional Diagram General Description The HMC742LP5E is a digitally controlled variable gain amplifier which operates from 70 MHz to 4 GHz, and can be programmed to provide from -19.5 dB attenuation, to 12 dB of gain, in 0.5 dB steps. The HMC742LP5E delivers noise figure of 4 dB in its maximum gain state, with output IP3 of up to +39 dBm in any state. The dual mode gain control interface accepts either a three-wire serial input or a 6 bit parallel word. The HMC742LP5E also features a user selectable power up state and a serial output for cascading other serially controlled Hittite components. The HMC742LP5E is housed in an RoHS compliant 5x5 mm QFN leadless package, and requires minimal external components. Electrical Specifications, TA = +25° C, 50 Ohm System Vdd = +5V, Vs= +5V Parameter Min. Gain (Maximum Gain State) Gain Control Range Input Return Loss Output Return Loss Gain Accuracy: (Referenced to Maximum Gain State) All Gain States Typ. Max. Min. 70 - 1000 Max. Units MHz 12 9 dB 31.5 31.5 dB 15 12 dB 14 10 dB 70 MHz - 350 MHz ± (0.3 + 5% of relative gain setting) Max 350 MHz - 1000 MHz ± (0.3 + 6% of relative gain setting) Max Output Power for 1 dB Compression Typ. 500 - 4000 ± (0.3 + 4% of relative gain setting) Max dB 21.5 22 dBm Output Third Order Intercept Point (Two-Tone Output Power= 12 dBm Each Tone) 40 39 dBm Noise Figure (Max Gain State) 4 4.5 dB 70 170 70 170 ns ns Switching Characteristics tRISE, tFall (10 / 90% RF) tON, tOFF (Latch Enable to 10 / 90% RF) Supply Current (Amplifier) 130 150 190 130 150 190 mA Supply Current (Controller) Idd 1.0 2.0 3.0 1.0 2.0 3.0 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC742LP5E v05.0610 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz 70 to 1000 MHz Tuning Relative Gain Setting Maximum Gain vs. Temperature (Referenced to Maximum Gain State) 17 0 RELATIVE GAIN (dB) 15 GAIN (dB) 13 11 +25 C +85 C -40 C 9 -10 16dB 8dB -20 31.5dB -30 7 -40 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 FREQUENCY (GHz) Input Return Loss 0.8 1 0.8 1 Output Return Loss 0 -10 RETURN LOSS (dB) 0 RETURN LOSS (dB) 0.6 FREQUENCY (GHz) 0dB -20 31.5dB -30 -10 31.5dB -20 0dB -30 16dB -40 -40 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 FREQUENCY (GHz) Bit Error vs. Relative Gain Bit Error vs. Frequency 4 3 3 0.5, 0.7, 0.9GHz 2 BIT ERROR (dB) 31.5dB BIT ERROR (dB) 0.6 FREQUENCY (GHz) 2 16dB 1 0 1 0 -1 0.1, 0.3GHz -2 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 -1 0 8 16 24 32 RELATIVE GAIN SETTING (dB) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 12 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 5 12 - 2 HMC742LP5E v05.0610 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz 70 to 1000 MHz Tuning Relative Phase vs. Frequency Step Error vs. Frequency 1 10 2, 4dB 8, 16dB 31.5dB STEP ERROR (dB) RELATIVE PHASE (DEG) 20 0 0, 0.5, 1, 2, 4dB -10 0.5 0 -0.5 0.5, 8, 16dB -20 12 - 3 0.2 0.4 0.6 0.8 -1 1 0 0.2 FREQUENCY (GHz) 0.4 0.6 0.8 1 0.8 1 0.8 1 FREQUENCY (GHz) Noise Figure vs. Temperature [1] Output P1dB vs. Temperature 8 24 6 P1dB (dBm) NOISE FIGURE (dB) 23 4 2 22 21 +25 C +85 C -40 C 20 +25 C +85 C -40 C 19 0 18 0 0.2 0.4 0.6 0.8 1 0 0.2 FREQUENCY (GHz) 0.6 Output IP3 vs. Temperature 48 24 44 IP3 (dBm) 28 20 +25 C +85 C -40 C 16 0.4 FREQUENCY (GHz) Psat vs. Temperature Psat (dBm) VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 0 40 +25 C +85 C -40 C 36 12 32 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) [1] Max Gain State For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC742LP5E v05.0610 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz 0.5 to 4.0 GHz Tuning Relative Gain Setting (Referenced to Maximum Gain State) 16 0 12 -10 8 +25 C +85 C -40 C 4 0 0.5 -20 16dB 31.5dB -30 -40 1 1.5 2 2.5 3 3.5 8dB 4 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 3.5 4 FREQUENCY (GHz) Input Return Loss Output Return Loss 0 0 0dB -10 RETURN LOSS (dB) RETURN LOSS (dB) 0dB -20 -30 16dB 31.5dB -10 31.5dB -20 -30 4dB -40 0.5 1 1.5 2 2.5 3 3.5 -40 0.5 4 1 1.5 FREQUENCY (GHz) 2 2.5 3 3.5 4 24 28 32 FREQUENCY (GHz) Bit Error vs. Relative Gain Bit Error vs. Frequency 4 3 3 BIT ERROR (dB) BIT ERROR (dB) 2 2 31.5dB 8dB 1 0 1.0, 4.0GHz 1 0 -1 -2 1dB 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 4 -1 2.0, 3.0GHz 0 4 8 12 16 20 RELATIVE GAIN STATE (dB) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 12 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT RELATIVE GAIN(dB) GAIN(dB) Maximum Gain vs. Frequency 12 - 4 HMC742LP5E v05.0610 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz 0.5 to 4.0 GHz Tuning Relative Phase vs. Frequency Step Error vs. Frequency 1 16dB 31.5dB 20 4, 8dB 8dB STEP ERROR (dB) RELATIVE PHASE (DEG) 30 10 0 -10 8dB 0.5 0 0.5, 31.5dB -0.5 16dB -20 -30 12 - 5 1 1.5 2 2.5 3 3.5 -1 4 0.5 1 1.5 28 6 23 4 +25 C +85 C -40 C 2 1 1.5 2 2.5 2.5 3 3.5 4 3 3.5 4 3 3.5 4 Output P1dB vs. Temperature 8 P1dB (dBm) NOISE FIGURE (dB) Noise Figure vs. Frequency [1] 0 0.5 2 FREQUENCY (GHz) FREQUENCY (GHz) 3 3.5 18 +25 C +85 C -40 C 13 8 0.5 4 1 1.5 FREQUENCY (GHz) 2 2.5 FREQUENCY (GHz) Psat vs. Temperature Output IP3 vs. Temperature 33 50 45 28 40 23 IP3 (dBm) Psat (dBm) VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 0.5 18 8 0.5 30 +25 C +85 C -40 C 13 1 1.5 2 2.5 FREQUENCY (GHz) 35 +25 C +85 C -40 C 25 3 3.5 4 20 0.5 1 1.5 2 2.5 FREQUENCY (GHz) [1] Max Gain State For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC742LP5E v05.0610 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz Serial Control Interface The HMC742LP5E contains a 3-wire SPI compatible digital interface (SERIN, CLK, LE). The serial control interrface is activated when P/S is kept high. The 6-bit serial word must be loaded MSB first. The positive-edge sensitive CLK and LE requires clean transitions. If mechanical switches are used, sufficient debouncing should be provided. When LE is high, 6-bit data in the serial input register is transferred to the attenuator. When LE is high CLK is masked to prevent data transition during output loading. When P/S is low, 3-wire SPI interface inputs (SERIN, CLK, LE) are disabled and the input register is loaded with parallel digital inputs (D0-D5). When LE is high, 6-bit parallel data changes the state of the part per truth table. For all modes of operations, the DVGA state will stay constant while LE is kept low. Parameter Typ. Min. serial period, tSCK 100 ns Control set-up time, tCS 20 ns Control hold-time, tCH 20 ns LE setup-time, tLN 10 ns Min. LE pulse width, tLEW 10 ns Min LE pulse spacing, tLES 630 ns Serial clock hold-time from LE, tCKN 10 ns Hold Time, tPH. 0 ns Latch Enable Minimum Width, tLEN 10 ns Setup Time, tPS 2 ns Timing Diagram (Latched Parallel Mode) Parallel Mode (Direct Parallel Mode & Latched Parallel Mode) Note: The parallel mode is enabled when P/S is set to low. Direct Parallel Mode - The attenuation state is changed by the control voltage inputs D0-D5 directly. The LE (Latch Enable) must be at a logic high at all times to control the attenuator in this manner. Latched Parallel Mode - The attenuation state is selected using the control voltage inputs D0-D5 and set while the LE is in the Low state. The attenuator will not change state while LE is Low. Once all Control Voltage Inputs are at the desired states the LE is pulsed. See timing diagram above for reference. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 6 HMC742LP5E v05.0610 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz PUP Truth Table Power-Up States If LE is set to logic LOW at power-up, the logic state of PUP1 and PUP2 determines the power-up state of the part per PUP truth table. If the LE is set to logic HIGH at power-up, the logic state of D0-D5 determines the power-up state of the part per truth table. The DVGA latches in the desired power-up state approximately 200 ms after power-up. Power-On Sequence VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 7 The ideal power-up sequence is: GND, Vdd, digital inputs, RF inputs. The relative order of the digital inputs are not important as long as they are powered after Vdd / GND Absolute Maximum Ratings RF Input Power at Max Gain [1] Bias Voltage (Vdd) 5.6V Collector Bias Voltage (Vcc) 5.5V Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 13.3 mW/°C above 85 °C) [2] 1.2 W Thermal Resistance [3] 75.6 °C/W -65 to +150 °C -40 to +85 °C [1] The maximum RF input power increases by the same amount the gain is reduced. The maximum input power at any state is no more than 28 dBm. [2] This value does not include the RF power dissipation in the attenuator. The loss in the attenuator depends on the state of the attenuator. The loss in the attenuator should be included to determine the total power dissipation in the part. [3] This value does not include the RF power dissipation in the attenuator. The thermal resistance at different states of the attenuator can be determined based on note [2] Bias Voltage Vdd (V) PUP2 Gain Relative to Maximum Gain 0 0 0 -31.5 0 1 0 -24 0 0 1 -16 0 1 1 Insertion Loss 1 X X 0 to -31.5 dB Note: The logic state of D0 - D5 determines the power-up state per truth table shown below when LE is high at power-up. Control Voltage Input 17.5 dBm (T = +85 °C) -0.5 to Vdd +0.5V Operating Temperature PUP1 Truth Table Digital Inputs (Reset, Shift Clock, Latch Enable & Serial Input) Storage Temperature LE Idd (Typ.) (mA) +5.0 2 Vs (V) Is (mA) +5.0 150 Gain Relative to Maximum Gain D5 D4 D3 D2 D1 D0 High High High High High High 0 dB High High High High High Low -0.5 dB High High High High Low High -1 dB High High High Low High High -2 dB High High Low High High High -4 dB High Low High High High High -8 dB Low High High High High High -16 dB Low Low Low Low Low Low -31.5 dB Any combination of the above states will provide a reduction in gain approximately equal to the sum of the bits selected. Control Voltage Table State Vdd = +3V Vdd = +5V Low 0 to 0.5V @