HMC742HFLP5E
v00.0211t
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz
Designer’s Kit
Available
Typical Applications
Features
The HMC742HFLP5E is ideal for:
-19 to 12.5 dB Gain Control in 0.5 dB Steps
• Cellular/3G Infrastructure
Power-up State Selection
• WiBro / WiMAX / 4G
High Output IP3: +39 dBm
• Microwave Radio & VSAT
TTL/CMOS Compatible
Serial, Parallel, or latched Parallel Control
• Test Equipment and Sensors
±0.25 dB Typical Gain Step Error
TE
• IF & RF Applications
Single +5V Supply
32 Lead 5x5mm SMT Package: 25mm2
12 - 1
General Description
B
SO
LE
The HMC742HFLP5E is a digitally controlled variable
gain amplifier which operates from 0.5 GHz to 4
GHz, and can be programmed to provide from -19
dB attenuation, to 12.5 dB of gain, in 0.5 dB steps.
The HMC742HFLP5E delivers noise figure of 4 dB
in its maximum gain state, with output IP3 of up to
+39 dBm in any state. The dual mode gain control
interface accepts either a three-wire serial input or a 6
bit parallel word. The HMC742HFLP5E also features a
user selectable power up state and a serial output for
cascading other serially controlled Hittite components.
The HMC742HFLP5E is housed in an RoHS compliant
5x5 mm QFN leadless package, and requires minimal
external components.
Electrical Specifications, TA = +25° C, 50 Ohm System Vdd = +5V, Vs= +5V
Parameter
Min.
Frequency Range
Typ.
Max.
Min.
Typ.
Max.
Units
500 - 2700
2700-4000
MHz
Gain (Maximum Gain State)
12.5
9
dB
Gain Control Range
31.5
31.5
dB
Input Return Loss
14
12
dB
Output Return Loss
10
12
dB
Gain Accuracy: (Referenced to Maximum Gain State)
All Gain States
± (0.3 + 4% of relative gain setting) Max
O
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
12
Functional Diagram
Output Power for 1 dB Compression
Output Third Order Intercept Point
(Two-Tone Output Power= 12 dBm Each Tone)
Noise Figure (Max Gain State)
Switching Characteristics
21
tRISE, tFall (10 / 90% RF)
tON, tOFF (Latch Enable to 10 / 90% RF)
Supply Current (Amplifier)
Supply Current (Controller) Idd
130
dB
22
dBm
39
38
dBm
4
4.5
dB
30
60
30
60
ns
ns
150
0.12
175
0.25
130
150
0.12
175
0.25
mA
mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery,
andRoad,
to place
orders: Analog
Devices,
For price,
delivery
and
to for
place
Hittite Microwave
Corporation,
20 Alpha
Chelmsford,
MA
01824Inc.,
responsibility
is assumed
by Analog
Devices
its use, orders:
nor for any infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may
result
from
its
use.
Specifications
subject
to
change
without
notice.
No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC742HFLP5E
v00.0211
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz
Relative Gain Setting
(Referenced to Maximum Gain State)
0
12
-10
8
4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
16dB
31.5dB
-30
-40
4.5
FREQUENCY (GHz)
0
0.5
1
1.5
2.5
3.5
4
4.5
3
3.5
4
4.5
28
32
LE
0
0dB
-20
-30
-40
0
B
SO
-10
0.5
1
1.5
2
2.5
3
3.5
4
-10
-20
-30
-40
0
4.5
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Bit Error vs. Attenuation State
O
Bit Error vs. Frequency
1.5
3
1
BIT ERROR (dB)
4
2
31.5dB
16dB
1
0
4.0 GHz
0.7 GHz
0.5
0
-0.5
2.0 GHz
3.0 GHz
-1
-1
-2
3
Output Return Loss
0
BIT ERROR (dB)
2
FREQUENCY (GHz)
Input Return Loss
RETURN LOSS (dB)
-20
TE
+25 C
+85 C
-40 C
8dB
-1.5
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
3.5
4
4.5
0
4
8
12
16
20
24
ATTENUATION STATE (dB)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery,
andRoad,
to place
orders: Analog
Devices,
For price,
delivery
and
to place
Hittite Microwave
Corporation,
20 Alpha
Chelmsford,
MA
01824Inc.,
responsibility
is assumed
by Analog
Devices
for its use,orders:
nor for any infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may
result
from
its
use.
Specifications
subject
to
change
without
notice.
No
Phone: 978-250-3343
Fax: 978-250-3373
Order
On-line at www.hittite.com
Phone: 781-329-4700
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
12
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
RELATIVE GAIN (dB)
16
RETURN LOSS (dB)
GAIN (dB)
Maximum Gain vs. Frequency
12 - 2
HMC742HFLP5E
v00.0211
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz
Relative Phase vs. Frequency
(Referenced to Maximum Gain State)
Step Attenuation vs. Attenuation State
40
1.5
31.5dB
STEP ATTENUATION (dB)
16dB
20
8dB
10
-10
-20
-30
0
0.5
1
12 - 3
2
2.5
3
3.5
4
0
0
4
8
12
16
20
24
28
32
3.5
4
4.5
3.5
4
4.5
LE
ATTENUATION STATE (dB)
Noise Figure vs. Frequency [1]
Output P1dB vs. Temperature
28
8
23
6
4
2
B
SO
NOISE FIGURE (dB)
0.5
-0.5
4.5
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
18
+25 C
+85 C
-40 C
13
+25 C
+85 C
-40 C
0
8
0
4.5
0.5
1
2
2.5
3
Output IP3 vs. Temperature
O
Psat vs. Temperature
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
50
28
45
23
40
IP3 (dBm)
Psat (dBm)
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
12
1.5
0.7 GHz
2.0 GHz
3.0 GHz
4.0 GHz
1
TE
0
P1dB (dBm)
RELATIVE PHASE (DEG)
30
18
30
+25 C
+85 C
-40 C
13
35
+25 C
+85 C
-40 C
25
20
8
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
[1] Max Gain State
Information
furnisheddelivery
by Analog Devices
believed orders:
to be accurate
and reliable.
However, Corporation,
no
For price, delivery,
andRoad,
to place
orders: Analog
Devices,
For price,
and tois place
Hittite
Microwave
20 Alpha
Chelmsford,
MA
01824Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may
result
from
its
use.
Specifications
subject
to
change
without
notice.
No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC742HFLP5E
v00.0211
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz
Serial Control Interface
The HMC742HFLP5E contains a 3-wire SPI compatible digital interface (SERIN, CLK, LE). The serial control interrface
is activated when P/S is kept high. The 6-bit serial word must be loaded MSB first. The positive-edge sensitive CLK
and LE requires clean transitions. If mechanical switches are used, sufficient debouncing should be provided. When
LE is high, 6-bit data in the serial input register is transferred to the attenuator. When LE is high CLK is masked to
prevent data transition during output loading.
When P/S is low, 3-wire SPI interface inputs (SERIN, CLK, LE) are disabled and the input register is loaded with
parallel digital inputs (D0-D5). When LE is high, 6-bit parallel data changes the state of the part per truth table.
Typ.
Min. serial period, tSCK
100 ns
Control set-up time, tCS
20 ns
Control hold-time, tCH
20 ns
LE setup-time, tLN
10 ns
Min. LE pulse width, tLEW
10 ns
Min LE pulse spacing, tLES
630 ns
Serial clock hold-time from LE, tCKN
10 ns
Hold Time, tPH.
0 ns
Latch Enable Minimum Width, tLEN
10 ns
Setup Time, tPS
2 ns
O
Parameter
Timing Diagram (Latched Parallel Mode)
Parallel Mode
(Direct Parallel Mode & Latched Parallel Mode)
Note: The parallel mode is enabled when P/S is set to low.
Direct Parallel Mode - The attenuation state is changed by the control voltage inputs D0-D5 directly. The LE (Latch
Enable) must be at a logic high at all times to control the attenuator in this manner.
Latched Parallel Mode - The attenuation state is selected using the control voltage inputs D0-D5 and set while the
LE is in the Low state. The attenuator will not change state while LE is Low. Once all Control Voltage Inputs are at the
desired states the LE is pulsed. See timing diagram above for reference.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 20
delivery,
and
to place
orders: Analog
For price,
delivery
and
to place
Microwave
Corporation,
Alpha
Road,
Chelmsford,
MADevices,
01824 Inc.,
responsibility
is assumed
by Analog
Devices
for its use,orders:
nor for any Hittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may
result
from
its
use.
Specifications
subject
to
change
without
notice.
No
Phone: 978-250-3343
Fax: 978-250-3373
Order
at www.hittite.com
Phone: On-line
781-329-4700
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
12
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
B
SO
LE
TE
For all modes of operations, the DVGA state will stay constant while LE is kept low.
12 - 4
HMC742HFLP5E
v00.0211
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz
PUP Truth Table
Power-Up States
If LE is set to logic LOW at power-up, the logic state of
PUP1 and PUP2 determines the power-up state of the
part per PUP truth table. If the LE is set to logic HIGH
at power-up, the logic state of D0-D5 determines the
power-up state of the part per truth table. The DVGA
latches in the desired power-up state approximately
200 ms after power-up.
12 - 5
RF Input Power at Max Gain
[1]
0
0
-31.5
0
1
0
-24
0
0
1
-16
0
1
1
Insertion Loss
1
X
X
0 to -31.5 dB
Note: The logic state of D0 - D5 determines the
power-up state per truth table shown below when LE
is high at power-up.
Control Voltage Input
17.5 dBm (T = +85 °C)
Controller Bias Voltage (Vdd)
5.6V
Amplifier Bias Voltage (Vcc)
5.5V
B
SO
-0.5 to Vdd +0.5V
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 13.3 mW/°C above 85 °C) [2]
1.2 W
Thermal Resistance [3]
75.6 °C/W
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
[1] The maximum RF input power increases by the same amount
the gain is reduced. The maximum input power at any state is no
more than 28 dBm.
[2] This value does not include the RF power dissipation in the
attenuator. The loss in the attenuator depends on the state of
the attenuator. The loss in the attenuator should be included to
determine the total power dissipation in the part.
[3] This value does not include the RF power dissipation in the
attenuator. The thermal resistance at different states of the
attenuator can be determined based on note [2]
Bias Voltage
Vdd (V)
0
Truth Table
Digital Inputs (LE, SERIN, CLK, P/S,
DO-D5, PUP1, PUP2)
Storage Temperature
Gain Relative to Maximum
Gain
LE
Absolute Maximum Ratings
O
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
12
The ideal power-up sequence is: GND, Vdd, digital
inputs, RF inputs. The relative order of the digital
inputs are not important as long as they are powered
after Vdd / GND
PUP2
TE
Power-On Sequence
PUP1
LE
Idd (Typ.) (mA)
+5.0
0.12
Vs (V)
Is (mA)
+5.0
150
Gain
Relative to
Maximum
Gain
D5
D4
D3
D2
D1
D0
High
High
High
High
High
High
0 dB
High
High
High
High
High
Low
-0.5 dB
High
High
High
High
Low
High
-1 dB
High
High
High
Low
High
High
-2 dB
-4 dB
High
High
Low
High
High
High
High
Low
High
High
High
High
-8 dB
Low
High
High
High
High
High
-16 dB
Low
Low
Low
Low
Low
Low
-31.5 dB
Any combination of the above states will provide a reduction in
gain approximately equal to the sum of the bits selected.
Control Voltage Table
State
Vdd = +3V
Vdd = +5V
Low
0 to 0.5V @